• 대한금속재료학회지
• /
• 제50권12호
• /
• pp.921-929
• /
• 2012

The pulsed current activated sintering method (PCAS) is a new rapid sintering method that was developed recently for fabricating ceramics and composites. This method combines a high temperature for a short time with pressure application. In this work, PCAS was used to fabricate $WC-5wt%Mo_2C-5wt%$ Co hard material using WC, $Mo_2C$, and Co. The $WC-Mo_2C-Co$ was almost completely dense with a relative density of up to 100% after the simultaneous application of a pressure of 60 MPa and electric current for 11 min without grain growth. The average grain size of WC that was produced through PCAS was about $0.5-0.6{\mu}m$. The vickers hardness and fracture toughness of the $WC-5wt%Mo_2C-5wt%$Co hard materials were about $2453.5kg/mm^2$ and $7.9MPa{\cdot}m^{1/2}$, respectively, for 60 MPa at $11200^{\circ}C$.

• 한국레이저가공학회지
• /
• 제1권1호
• /
• pp.18-23
• /
• 1998

A Study on microstructural changes of sensitized Alloy 600 which was rapidly solidified by a $CO_2$ laser beam was conducted using microscopic equipments such as SEM and TEM. Dissolution of Cr-rich carbides and resultant Cr recovery on the grain boundaries occurred in the heat affected zone (HZA). The microstructure of the laser melted zone (LMZ) having epitaxially solidified from the HAZ was mainly celluar-dendritic with the 〈100〉 crystallographic direction of growth. The Cr concentration was observed to increase along the cell bondaries, and tiny particles were distributed along the cell walls with tangled dislocations around them. Cr-rich carbides had been completely melted by the high density of a laser beam, and were not re-precipitated during the matrix solidification due to a fast cooling rate in the LMZ.

• 한국세라믹학회지
• /
• 제29권9호
• /
• pp.750-756
• /
• 1992

Reaction bonded si-SiC composites were prepared by silicon infiltration technique at temperature of 1$600^{\circ}C$ for 30 minutes in vaccum atmosphere. The microstructure and mechanical properties of Si-SiC composites were investigated and characterized. UF-15 and SE-10 as SiC powders, phenolic resin and carbon black as carbon source, and metallic silicon powder as molten Si source were used as starting materials. New SiC crystallines nucleatd and grown by reaction of Si and C were detected by TEM and SEM-EDS. The bonding between new and original SiC was found to be strong. But the wetting of SiC by unreacted metallic Si and the rapid grain growth of new SiC decreased density and fracture toughness. Fracture toughness and modulus of rupture of Si-SiC composite were about 3.2 MPa.m1/2 and 480 MPa, respectively.

• 한국분말재료학회지
• /
• 제2권1호
• /
• pp.53-62
• /
• 1995

TLP(Transient-Liquid-Phase) bonding of Fe-base MA956 ODS alloy was performed. As insert metal a commercially available Ni-base alloy(MBF50) and an MA956 alloy with additive elements of 7wt% Si and 1wt% B were used. To confirm the idea that a concurrent use of MA956 powder with Insert metals can enhance the homogenization of constituent elements and thereby reduce the thickness of joint interface, MA956 powder was also inserted In a form of sheet. SEM observation and EDS analysis revealed that Cr-rich phase was formed in the bonded interface in initial stage of isothermal solidification during the bonding process, irrespective of kind of insert metals. Measurement of hardeness in the region of bonded interface and EDS analysis showed that a complete homogenization of composition could not be obtained especially in case of MBF50. Joints using either BSi insert metals only or BSi insert together with MA956 powder interlayer showed, however, a remarkable improvement in a compositional homogenization, even though a rapid grain growth in the bonded interface could not be hindered.

• Journal of Korean Vacuum Science & Technology
• /
• 제2권2호
• /
• pp.97-100
• /
• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2001년도 추계학술발표대회 개요집
• /
• pp.128-131
• /
• 2001

Laser cladding processing allows rapid transfer of heat to the material being processed with minimum conduction into base metal, resulting in low total heat input. The effects of $CO_2$ laser cladding with powder feeding on mechanical properties of VERSAlloy were studied. Their low melting point (under 1093$^{\circ}C$) enables overlays to be applied with minimum dilution and base metal distortion. Experiment results indicated that powder feeding speed and quantity were important for laser cladding with powder feeding. The powder feeding speed should be adapted according to cladding speed for good shaping of clad layer. The effect of heat on the HAZ size can be limited and the growth of grain size of HAZ size was not serious.

• 대한금속재료학회지
• /
• 제50권1호
• /
• pp.34-38
• /
• 2012

Titanium has good deformability, high hardness, high biocompatibility, excellent corrosion resistance and low density. Due to these attractive properties, it has been used in many industrial applications. Dense nanostructured Ti was sintered from mechanically activated Ti and $TiH_2$ powders by high frequency induction heating under pressure of 80 MPa. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. $TiH_2$ powder was decomposed to Ti during sintering. The hardness of Ti increased and the average grain size of Ti decreased with increasing milling time. The average grain sizes of Ti samples sintered from Ti and $TiH_2$ powder milled for 5 hrs were about 26 nm, 44 nm, respectively. The hardness of Ti sintered from Ti and $TiH_2$ powder milled for 5 h was $504kg/mm^2$ and $567kg/mm^2$, respectively.

• Journal of Ceramic Processing Research
• /
• 제19권5호
• /
• pp.383-387
• /
• 2018

Highly transparent $Y_2O_3$ ceramics were produced using spark plasma sintering (SPS) at $1600^{\circ}C$ and 30 MPa for 5 min. When the SPS process was applied with various amounts of $La_2O_3$ as dopant. The specimen doped with 3 mol% $La_2O_3$ showed the highest density, and rapid particle growth and pore growth occurred, exhibiting that the relative density and average grain size are 99.2% and $17.2{\mu}m$, respectively. The specimen showed excellent transmittance of 79.44% in the visible light region (600 nm), resulting that $La_2O_3$ would be a useful dopant for improving the transmittance and mechanical properties of transparent $Y_2O_3$ ceramics produced with SPS.

• 한국자기학회지
• /
• 제3권4호
• /
• pp.298-304
• /
• 1993

Pd/Co 다층박막을 동시열증착장치로 제작하여, 토오크 자력계, 홀 효과 측정장치 및 X-선 회절기를 이용하여 기판 온도, Pd하지층에 따른 구조적 자기적 및 열적 특성변화를 연구하였다. 기판 온도가 증가함에 따라 $150^{\circ}C$까지는 계면구조 및 각 층의 결정성이 향상되고, (111) 집합조직이 발달되었으며 따라서 계면자기이방성 및 수직자기 이방성에너지는 증가하였다. 그러나 보자력은 감소 하였는데 이는 입자의 성장으로 인한 자구벽 고착효과 감소에 기인된 것으로 보이며 Pd하지층이 두꺼 울 수록 다층박막의 입자크기는 컸다. $200^{\circ}C$ 이상에서는 계면에서 상호확산에 의하여 다층막의 구조의 열화는 촉진되었다. 열처리 초기에 주 피이크 강도의 변화는 컸으며 그 후부터는 작은 폭으로 감소하였다. 초기의 큰 강도 변화는 구조이완등의 현상에 기인된 것으로 추측되며 그 후는 확산에 의 해서이다. 다층박막의 상호확산에 필요한 활성화 에너지는 14.9 KCal/mole.K 였다.

• 대한금속재료학회지
• /
• 제49권11호
• /
• pp.845-852
• /
• 2011

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processing conditions. The compact/target(?) has a diameter of ${\Phi}150{\times}6.35mm$. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a $Si/SiO_2$ substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below $40{\mu}m$, respectively. The specific resistivity of the optimized Ti target was $8.63{\times}10^{-6}{\Omega}{\cdot}cm$.