• 한국분말재료학회지
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• 제7권3호
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• pp.161-167
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• 2000

Mechanically-alloyed NiAl powder and ball-milled (Ni+Al) powder mixture were sintered by spark-plasma sintering(SPS) process. Mechanical alloying was performed in a horizontal attritor for 20 h with rotation speed of 600 rpm. (Ni+Al) powder mixtures were prepared by ball milling for 1 and 10 h with 120 rpm. Both powders were sintered at $1150^{\circ}C$ for 5 min under $10^{-3}$ torr vacuum with 50 MPa die pressure in a SPS facility. Sintered densities of 97% and 99% were obtained from mechanically-alloyed NiAl powder and (Ni+Al) powder mixture, respectively. The sintered compact of (Ni+Al) powder mixture showed large grain size by a very rapid grain growth, while the grain size of mechanically-alloyed NiAl powder compact after sintering was extremely fine(80 nm). The difference in densification behavior of both powders were discussed.

• 한국분말재료학회지
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• 제11권3호
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• pp.233-241
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• 2004

In this study, bottom-up type powder processing and top-down type SPD (severe plastic deformation) approaches were combined in order to achieve both full density and grain refinement of Al-20 wt% Si powders without grain growth, which was considered as a bottle neck of the bottom-up method using the conventional powder metallurgy of compaction and sintering. ECAP (Equal channel angular pressing), one of the most promising method in SPD, was used for the powder consolidation. The powder ECAP processing with 1, 2, 4 and 8 passes was conducted for 10$0^{\circ}C$ and 20$0^{\circ}C$ It was found by microhardness, compression tests and micro-structure characterization that high mechanical strength could be achieved effectively as a result of the well bonded powder contact surface during ECAP process. The SPD processing of powders is a viable method to achieve both fully density and nanostructured materials.

• 한국재료학회지
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• 제13권2호
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• pp.120-125
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• 2003

A low melting borosilicate glass frit was used as an adhesion promoter, which enables $MnWO_4$to be sintered with in a reasonable sintering temperature range ($800∼1000^{\circ}C$). The glass was evaluated for glass transition temperature ($Τ_{g}$ X) and thermal expansion coefficient($\alpha$). Mechanical property (Vickers hardness), grain growth, the comparison of lattice parameter and pore distribution of sintered $MnWO_4$ with the frit were methodically discussed. As sintering temperature increased, a typical liquid phase sintering showed the rapid grain growth and high densification of X$MnWO_4$grain, improvement of hardness (until $920^{\circ}C$) and different pore size distribution. Resistance of sintered $MnWO_4$varied from 450k$\Omega$ to 8.8M$\Omega$ under the measuring humidify ranging from 30 to 90%. Thus, the results will contribute to the application of glass frit containing sensor materials and their future use.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• 한국세라믹학회지
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• 제49권6호
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.776-780
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• 2002

This paper describes the concept and the characteristics of hyper interfacial bonding developed as a new concept joining process for UFG (ultra-fine grained) steel. Hyper interfacial bonding process is characterized by instantaneous surface melting bonding which involves a series of steps, namely, surface heating by high frequency induction, the rapid removing of heating coil and joining by pressing specimens. UFG steels used in this study have the average grain size of 1.25 ${\mu}{\textrm}{m}$. The surface of specimen can be rapidly heated up and melted within 0.2s. Temperature gradient near heated surface is relatively steep, and peak temperature drastically fell down to about 1100K at the depth of 2~3mm away from the heated surface of specimen. Bainite is observed near bond interface, and also M-A (martensite-austenite) islands are observed in HAZ. Grain size increases with increasing heating power, however, the grain size in bonded zone can be restrained under 11 ${\mu}{\textrm}{m}$. Hardened zone is limited to near bond interface, and the maximum hardness is Hv350~Hv390.

• 한국재료학회지
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• 제23권11호
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• pp.620-624
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• 2013

Nanocrystalline materials have recently received significant attention in the area of advanced materials engineering due to their improved physical and mechanical properties. A solid-solution nanocrystalline powder, (Ti,Mo)C, was prepared via high-energy milling of Ti-Mo alloys with graphite. Using XRD data, the synthesis process was investigated in terms of the phase evolution. Rapid sintering of nanostuctured (Ti,Mo)C hard materials was performed using a pulsed current activated sintering process (PCAS). This process allows quick densification to near theoretical density and inhibits grain growth. A dense, nanostructured (Ti,Mo)C hard material with a relative density of up to 96 % was produced by simultaneous application of 80 MPa and a pulsed current for 2 min. The average grain size of the (Ti,Mo)C was lower than 150 nm. The hardness and fracture toughness of the dense (Ti,Mo)C produced by PCAS were also evaluated. The fracture toughness of the (Ti,Mo)C was higher than that of TiC.

• 대한금속재료학회지
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• 제48권11호
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• pp.1009-1013
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• 2010

Extremely dense WC with a relative density of up to 99% was obtained within five minutes under a pressure of 80 MPa using the High-Frequency Induction Heated Sintering method. The average grain size of the WC was about 71 nm. The advantage of this process is not only rapid densification to obtain a neartheoretical density but also the prohibition of grain growth in nano-structured materials. The hardness and fracture toughness of the dense WC produced by HFIHS were $2660kg{\cdot}mm^{-2}$ and $7.2MPa{\cdot}m^{1/2}$, respectively.

• 대한금속재료학회지
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• 제56권12호
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• pp.854-860
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• 2018

In spite of the many attractive properties of (W,Ti)C, its low fracture toughness limits its wide application. To improve the fracture toughness generally a second phase is added to fabricate a nanostructured composite. In this regard, graphene was considered as the reinforcing agent of (W,Ti)C. (W,Ti)C-graphene composites that were sintered within 2 min using pulsed current activated heating under a pressure of 80 MPa. The rapid consolidation method allowed retention of the nano-scale microstructure by blocking the grain growth. The effect of graphene on the hardness and microstructure of the (W,Ti)C-graphene composite was studied using a Vickers hardness tester and FE-SEM. The grain size of (W,Ti)C was reduced remarkably by the addition of graphene. Furthermore, the hardness decreased and the fracture toughness improved with the addition of graphene.

• 한국재료학회지
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• 제21권2호
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• pp.78-82
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• 2011

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.