• Journal of Magnetics
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• 제8권2호
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Progress in Superconductivity
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• 제3권1호
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• pp.65-69
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• 2001

We measured the transport properties of$ YBa_2$$Cu_3$$O_{x}$ ramp-edge junction fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are almost correlated. The smaller magnitude of the critical current and resistance fluctuations seems to result from the columnar-deflects.s.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.40-40
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• 2001

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.13-15
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• 1999

A Josephson sampler circuit using high-Tc superconductor (HTS) ramp-edge junctions has been designed, fabricated, and experimentally tested. It consists of five ramp-edge junctions with a stacked groundplane and is based on single-flux-quantum (SFQ) operations. The sampler was used to measure current waveforms at picosecond and microampere resolutions. We are developing a system based on the sampler for measuring the current waveform in a room-temperature sample. And measuring current flowing through wiring in a semiconductor large-scale integrated circuit is a promising application for the HTS sampler system.

• Progress in Superconductivity
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• 제1권2호
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• pp.81-84
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• 2000

A Josephson sampler circuit using high-Tc superconductor (HTS) ramp-edge junctions has been designed, fabricated, and experimentally tested. It consists of five ramp-edge junctions with a stacked groundplane and is based on single-flux-quantum (SFQ) operations. The sampler was used to measure current waveforms at picosecond and microampere resolutions. We are developing a system based on the sampler for measuring the current waveform in a room-temperature sample. And measuring current flowing through wiring in a semiconductor large-scale integrated circuit is a promising application for the HTS sampler system.

• 대한토목학회논문집
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• 제28권2D호
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• pp.205-216
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• 2008

도시고속도로란 도시지역 내 고속의 자동차 전용도로로서 대량의 교통량을 신속하게 처리하기 위해 높은 설계기준이 요구되는 4차선 이상의 도로를 의미한다. 그러나 대부분의 도시고속도로는 오전 오후첨두시 또는 도심 부도심방향에 관계없이 도로의 용량을 초과하는 교통량의 증가로 인하여 심각한 교통혼잡을 겪고 있는 실정이다. 따라서 이 연구의 목적은 부산항과 연계된 도시고속도로의 연결로 접속영향권을 대상으로 실시간 교통특성을 수집하여 교통특성을 파악하고, 연결로 접속영향권내 각 차로에 대한 교통특성관계를 비교 분석하며, 마지막으로 연결로 접속영향권내 각 차로에 대한 최적의 용량을 평가하여 차로별 소통능력을 제시하고자 한다.

• 대한토목학회논문집
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• 제30권3D호
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• pp.215-222
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• 2010

일반적으로 평균속도란 어느 도로구간을 이동하는 차량의 평균통행시간에 기초한 통행속도를 의미하고, 도로의 서비스수준 평가를 위해 도로용량편람에서 제시하고 있는 평균통행속도가 효과척도로 사용되고 있다. 국내 대부분의 도시고속도로는 제한속도 80Km/h이하의 고속화도로로서 출퇴근시간대에 관계없이 체증문제를 안고 있다. 특히, 도시고속도로의 연결로 접속구간역내에서의 교통정체는 통행량 증가와 주변 간선도로와의 연계성이 부족하여 더욱 악화되고 있다. 따라서 본 연구의 목적은 도시고속도로의 연결로 접속구간역내에서의 교통특성을 파악하고, 파악된 교통특성을 중심으로 연결로 접속구간 내 평균속도를 추정하며, 추정된 평균속도의 타당성을 입증하는데 있다.

• 한국재료학회지
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• 제8권3호
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• pp.263-267
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• 1998

본 연구에서는 금속 칼날 마스크와 펄스형 레이저 증착장치를 이용하여 $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ 다층박막 형태의 In-situ SIS ramp dege 형태의 접합을 제작하였으며, 이의 특성을 조사하였다. 접합은 RSJ 형태의 전류-전압 특성ㅇ르 나타내고 있으며, 온도 변화에 따른 접합의 normal resistance는 약 $18 \omega$으로 온도에 무관하게 일정한 값을 나타내었다. 접합형태를 이용하여 감도(transfer function, dV/$d\Phi$)가 약 $22\mu$V/$\Phi_{0}$인 dc-SQUID센서를 제작하였으며, in-situ SIS ramp edge 형태의 접합이 센서로의 응용가능성을 충분히 가지고 있음을 보여 주었다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.189-192
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• 2000

We fabricated rapid single-flux-quantum RS flip-flop circuits with and without Y$_1$Ba$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) ground plane. The circuit consists of SNS-type ramp-edge Josephson junctions that have cobalt-doped YBCO and Sr$_2$AITaO$_6$(SAT) for barrier layer and insulator layer, respectively. The fabricated Josephson junction showed a typical RSJ-like current-voltage(I-V) characteristics above 50K. We sucessfuly demonstrated RS flip-flop at temperatures around 50K. The RS flip-flop fabricated on ground plane showed more definite set and reset state in voltage-flux(V-${\phi}$) modulation curve for read SQUID, which may be attributed to a shielding effect of the YBCO ground plane.

• Progress in Superconductivity
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• 제2권2호
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.