• Applied Chemistry for Engineering
• /
• v.10 no.1
• /
• pp.105-111
• /
• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.10
• /
• pp.1-7
• /
• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Applied Chemistry for Engineering
• /
• v.26 no.6
• /
• pp.737-742
• /
• 2015

An environmentally favorable solid oxidizer, guanidine dinitramide ($H_2C(NH_2)NH_2N(NO_2)_2$), with high purity and synthesis yield was prepared using guanidine carbonate ($NH_2C(=NH)NH_2{\cdot}1/2H_2CO_3$). Two different crystalline forms (${\alpha}$-form and ${\beta}$-form) were obtained depending on the solvent used and synthesis process. Despite of the same chemical composition, Raman-IR and TGA-DSC revealed that different structures existed between them. In particular, the thermal analysis showed the exothermic temperature of ${\alpha}$-form at $155.7^{\circ}C$ while $191.6^{\circ}C$ for ${\beta}$-form. The caloric value of ${\alpha}$-form was 536.4 J/g which was 2.5 times larger than that of ${\beta}$-form, 1310 J/g. In addition, ${\alpha}$-form was steeply decomposed with one-step variation, but ${\beta}$-form followed a two-step thermal decomposition pattern.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.409-409
• /
• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Polymer(Korea)
• /
• v.38 no.2
• /
• pp.180-187
• /
• 2014

Nanocomposites including graphene oxide (GO) and conducting polymers (PPy, PANI and PEDOT) were prepared via an in-situ chemical polymerization process, and their characteristic properties depending upon the change of conducting polymer (CP) content were analyzed. A confirmation was made on not only the functional groups formed in GO but also the presence of CP existent in the nanocomposites. The molecular interaction between GO and poly(4-styrene sulfonic acid) (PSSA) or CP in the nanocomposites was proposed. With the increase of PEDOT content in the GOPSS/PEDOT nanocomposite, the estimated value of $I_D/I_G$ regarding the Raman analysis of them was decreased and a major change of their Raman spectra characteristic peaks was observed. In the GO-PSS/PEDOT nanocomposite, PEDOT molecules made an exfoliation of GO-PSSA layers and thus they were intercalated among layers. Such a unique molecular morphology induced the highest electrical conductivity for the GO-PSS/PEDOT nanocomposite among three kinds of nanocomposites prepared in this study. It is also noted that the uniform morphology confirmed in this study helped a thermal stability improvement in the nanocomposite due to the presence of GO or GO-PSSA acting as a thermal barrier.

• Journal of the Korean Vacuum Society
• /
• v.16 no.5
• /
• pp.377-382
• /
• 2007

In this study, we report the synthesis of the single-walled carbon nanotubes(SWCNTs) using laminated catalyst(Al/Fe/Al) layer deposited by sputter on Si(001). SWCNTs are grown by thermal chemical vapor deposition (TCVD) method. As the results of scanning electron microscopy(SEM), high resolution transmission electron microscopy(HR-TEM) and Raman spectroscopy, we confirmed the SWCNTs bundles with narrow diameter distribution of $1.14{\sim}1.32\;nm$ and average G&D ratio of 22.76. Compare to the sample having Fe/Al catalyst layer, it can be proposed that the top-aluminum incorporated with iron catalyst plays an important role in growing process of CNTs as a agglomeration barrier of the Fe catalyst. Thus, we suggest that a proper quantity of aluminium metal incorporated in Fe catalyst induce small and uniform iron catalysts causing SWCNTs with narrow diameter distribution.

• Applied Chemistry for Engineering
• /
• v.23 no.5
• /
• pp.485-489
• /
• 2012

We investigated vanadium (V) loading effects on selective catalytic reduction (SCR) activity and $SO_2$ resistance using commercial SCR catalysts applied on a power plant and incinerator with different amounts of V loading. These catalysts were characterized using XRD, Raman, ICP, BET analysis and found to contain $TiO_2$ (anatase) supported $V_2O_5$ added $WO_3$ and $SiO_2$. The SCR activity of the catalysts increased by increasing either the $V_2O_5$ or the $WO_3$ loading amounts; the SCR activity of the catalysts added $WO_3$ is higher than that of $WO_3$-free catalysts. As the V loading amount in the catalyst increased, the $SO_2$ durability decreased. The $V_2O_5$ supported $TiO_2$ catalyst added $WO_3$ and $SiO_2$ inhibits the deactivation process by $SO_2$. The $SO_2$ resistance of catalysts added $SiO_2$ is higher than that of catalysts added $WO_3$.

• Applied Chemistry for Engineering
• /
• v.19 no.4
• /
• pp.407-412
• /
• 2008

As an activation procedure, in this study, the oxidation treatment of needle cokes with a dilute nitric acid and sodium chlorate $(NaClO_3)$, combined with heat treatment, was attempted. The structures of acid-treated and pyrolyzed coke were examined with XRD, FESEM, elemental analyzer, BET, and Raman spectroscopy. The behavior of double layer capacitance was investigated with the analysis of charge and discharge. The structure of needle coke treated with acid was revealed to a single phase of (001) diffraction peak after 24 h. On the other hand, thecoke oxidized by heat treatment was reduced to a graphite structure of (002) at $300^{\circ}C$. The distorted graphene layer structure, derived from the process of oxidation and reduction of the inter-layer, makes the pores by the electric field activation at the first charge, and generates the double layer capacitance from the second charge. The cell using pyrolyzed coke with 24 h acid treatment and $300^{\circ}C$ heat treatment exhibited the maximum capacitance per weight and volume of 33 F/g and 30 F/mL at the two-electrode system in the potential range of 0~2.5 V.

• Clean Technology
• /
• v.26 no.2
• /
• pp.131-136
• /
• 2020

Biomass bamboo charcoal is utilized as anode for lithium-ion battery in an effort to find an alternative to conventional resources such as cokes and petroleum pitches. The amorphous phase of the bamboo charcoal is partially converted to graphite through a low temperature graphitization process with iron oxide nanoparticle catalyst impregnated into the bamboo charcoal. An optimum catalysis amount for the graphitization is determined based on the characterization results of TEM, Raman spectroscopy, and XRD. It is found that the graphitization occurs surrounding the surface of the catalysis, and large pores are formed after the removal of the catalysis. The formation of the large pores increases the pore volume and, as a result, reduces the surface area of the graphitized bamboo charcoal. The partial graphitization of the pristine bamboo charcoal improves the discharge capacity and coulombic efficiency compared to the pristine counterpart. However, the discharge capacity of the graphitized charcoal at elevated current density is decreased due to the reduced surface area. These results indicate that the size of the catalysis formed in in-situ graphitization is a critical parameter to determine the battery performance and thus should be tuned as small as one of the pristine charcoal to retain the surface area and eventually improve the discharge capacity at high current density.

• Korean Journal of Materials Research
• /
• v.18 no.4
• /
• pp.222-227
• /
• 2008

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.