• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.395-395
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• 2008

Water-assisted synthesis of carbon nanotubes (CNTs) has been intensively studied in recent years, reporting that water vapor enhances the activity and lifetime of metal catalyst for the CNT growth. While most of these studies has been focused on the supergrowth of CNTs at high temperature, rarely has the similar approach been made for the CNT synthesis at low temperature. Since the metal catalyst are much less active at lower temperature, we expect that the addition of water vapor may increase the activity of catalyst more largely at lower temperature. We synthesized multi-walled CNTs at temperature as low as $360^{\circ}C$ by introducing water vapor during growth. The water addition caused CNTs to grow ~3 times faster. Moreover, the water-assisted growth prolonged the termination of CNT growth, implying the enhancement of catalyst lifetime. In general, a thinner catalyst layer is likely to produce smaller-diameter, longer CNTs. In a similar manner, the water vapor had a greater effect on the growth of CNTs for a smaller thickness of catalyst in this study. To figure out the role of process gases, CNTs were grown in the first stage and then exposed to each of process gases in the second stage. It was shown that water vapor and hydrogen did not etch CNTs while acetylene led to the additional growth of CNTs even faster in the second stage. As-grown CNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and Raman spectroscopy.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.37.2-37.2
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• 2010

Recently $Li_{1.2}Ni_{0.2}Mn_{0.6}O_2$ has been consistently examined and investigated by scientists because of its high lithium storage capacity, which exceeds beyond the conventional theoretical capacity based on conventional chemical concepts. Consequently, $Li_{1.2}Ni_{0.2}Mn_{0.6}O_2$ is considered as one of the most promising cathode candidates for next generation in Li rechargeable batteries. Yet the mechanism and the origin of the overcapacity have not been clarified. Previously, many authors have demonstrated simultaneous oxygen evolution during the first delithiation. However, it may only explain the high capacity of the first charge process, and not of the subsequent cycles. In this work, we report a clarified interpretation of the structural evolution of $Li_{1.2}Ni_{0.2}Mn_{0.6}O_2$, which is the key element in understanding its anomalously high capacity. We identify how the structural evolution of $Li_{1.2}Ni_{0.2}Mn_{0.6}O_2$ occurs upon the electrochemical cycling through careful study of electrochemical profiles, ex-situ X-ray diffraction (XRD), HR-TEM, Raman spectroscopy, and first principles calculation. Moreover, we successfully separated the structural change at subsequent cycles (mainly cation rearrangement) from the first charge process (mainly oxygen evolution with Li extraction) by intentionally synthesizing sample with large particle size. Consequently, the intermediate states of structural evolution could be well resolved. All observations made through various tools lead to the result that spinel-like cation arrangement and lithium environment are created and embedded in layered framework during repeated electrochemical cycling.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• 한국세라믹학회지
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• 제53권6호
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• pp.597-603
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• 2016

Tantalum carbide, which is one of the ultra-high temperature ceramics, was deposited on graphite by low pressure chemical vapor deposition from a $TaCl_5-C_3H_6-Ar-H_2$ mixture. To maintain a constant $TaCl_5/C_3H_6$ ratio during the deposition process, $TaCl_5$ powders were continuously fed into the sublimation chamber using a screw-driven feeder. Sublimation behavior of $TaCl_5$ powder was measured by thermogravimetric analysis. TaC coatings have various phases such as $Ta+{\alpha}-Ta_2C$, ${\alpha}-Ta_2C+TaC_{1-x}$, and $TaC_{1-x}$ depending on the powder feeding methods, the $C_3H_6/TaCl_5$ ratio, and the deposition temperatures. Near-stoichiometric TaC was obtained by optimizing the deposition parameters. Phase compositions were analyzed by XRD, XPS, and Raman analysis.

• 한국분말재료학회지
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• 제28권6호
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• pp.462-469
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• 2021

Tin/graphite composites are prepared as anode materials for Li-ion batteries using a dry ball-milling process. The main experimental variables in this work are the ball milling time (0-8 h) and composition ratio (tin:graphite=5:95, 15:85, and 30:70 w/w) of graphite and tin powder. For comparison, a tin/graphite composite is prepared using wet ball milling. The morphology and structure of the different tin/graphite composites are investigated using X-ray diffraction, Raman spectroscopy, energy-dispersive X-ray spectroscopy, and scanning and transmission electron microscopy. The electrochemical properties of the samples are also examined. The optimal dry ball milling time for the uniform mixing of graphite and tin is 6 h in a graphite-30wt.%Sn sample. The electrode prepared from the composite that is dry-ball-milled for 6 h exhibits the best cycle performance (discharge capacity after 50^th cycle: 308 mAh/g and capacity retention: 46%). The discharge capacity after the 50^th cycle is approximately 112 mAh/g, higher than that when the electrode is composed of only graphite (196 mAh/g after 50^th cycle). This result indicates that it is possible to manufacture a tin/graphite composite anode material that can effectively buffer the volume change that occurs during cycling, even using a simple dry ball-milling process.

• 한국의류산업학회지
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• 제24권1호
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• pp.146-155
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• 2022

We proposed a simple process of creating electroconductive textiles by using PEDOT:PSS(Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate))/non-oxidized graphene to coat polyamide or polyurethane knitted fabric for smart healthcare purposes. Electroconductive textiles were obtained through a coating process that used different amounts of PEDOT:PSS/non-oxidized graphene solutions on polyamide/polyurethane knitted fabric. Subsequently, the surface, electrical, chemical, weight change, and elongation properties were evaluated according to the ratio of PEDOT:PSS/non-oxidized graphene composite(1.3 wt%:1.0 wt%; 1.3 wt%:0.6 wt%; 1.3 wt%:0.3 wt%) and the number of applications(once, twice, or thrice). The specimens' surface morphology was observed by FE-SEM. Further, their chemical structures were characterized using FTIR and Raman spectroscopy. The electrical properties measurement (sheet resistance) of the specimens, which was conducted by four-point contacts, shows the increase in conductivity with non-oxidized graphene and the number of applications in the composite system. Moreover, a test of the fabrics' mechanical properties shows that PEDOT:PSS/non-oxidized graphene-treated fabrics exhibited less elongation and better ability to recover their original length than untreated samples. Furthermore, the PEDOT:PSS/non-oxidized graphene polyamide/polyurethane knitted fabric was tested by performing tensile operations 1,000 times with a tensile strength of 20%; Consequently, sensors maintained a constant resistance without noticeable damage. This indicates that PEDOT:PSS/non-oxidized graphene strain sensors have sufficient durability and conductivity to be used as smart wearable devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.