• Title/Summary/Keyword: Raman process

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$TiO_2$-Ni inverse Catalyst for CRM Reactions with High Resistance to Coke Formation

  • Seo, Hyun-Ook;Sim, Jong-Ki;Kim, Kwang-Dae;Kim, Young-Dok;Lim, Dong-Chan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.267-267
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    • 2012
  • $TiO_2$-Ni inverse catalysts were prepared using atomic layer deposition (ALD) process and catalytic $CO_2$ reforming of methane (CRM) reaction over catalysts (either bare Ni or $TiO_2$ coated-Ni particles) were performed using a continuous flow reactor at $800^{\circ}C$. $TiO_2$-Ni inverse catalyst showed higher catalytic reactivity at initial stage of CRM reactions at $800^{\circ}C$ comparing to bare Ni catalysts. Moreover, catalytic activity of $TiO_2$/Ni catalyst was kept high during 13 hrs of the CRM reactions at $800^{\circ}C$, whereas deactivation of bare Ni surface was started within 1hr under same conditions. The results of surface analysis using SEM, XPS, and Raman showed that deposition of graphitic carbon was effectively suppressed in a presence of $TiO_2$ nanoparticles on Ni surface, thereby improving catalytic reactivity and stability of $TiO_2$/Ni catalytic systems. We suggest that utilizing decoration effect of metal catalyst with oxide nanoaprticles is of great potential to develop metal-based catalysts with high stability and reactivity.

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Structural behavior of polyphenylcarbosilane through pyrolysis process

  • Lee, Yun-Ju;Kim, Yeong-Hui;Kim, Jong-Il;Kim, Su-Ryong;Gwon, U-Taek
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.94.1-94.1
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    • 2012
  • 폴리페닐카보실란은 페닐그룹을 포함하고 있는 카보실란계 고분자로서 열분해 후 과량의 탄소를 함유할 수 있는 세라믹 전구체이다. 카보실란계열의 고분자는 산화특성이 있어 SiOC 코팅 용도에도 사용되고 있는데, 폴리페닐카보실란은 free 탄소를 함유하는 SiOC:C 필름을 형성할 수 있다. SiOC 코팅 전구체로는 일반적으로 실리카졸, 실라잔 계열의 고분자, 실록산 계열의 고분자가 사용되고 있으나, 폴리페닐카보실란의 경우 상기 전구체에 비하여 보관 안정성 및 뛰어난 부착특성을 나타낸다. 기존 연구에서는 폴리페닐카보실란으로부터 형성된 SiOC:C 필름의 저유전막, 산화방지막, 분진방지막 등의 응용성에 대하여 고찰한 바 있다. 폴리페닐카보실란은 열처리 온도 영역에 따라 응용 분야가 달라질 수 있는데, 이에 본 연구에서는 각 열처리 온도 영역에 따라 형성되는 SiOC:C 필름의 구조적 변화를 고찰하였다. 필름 형성은 20 % 폴리카보실란 용액을 스핀코팅하고 대기상에서 경화를 실시하였으며, 질소 분위기에서 400 ~ 1200 도 범위에서 열처리하였다. 이렇게 얻어진 300 nm 두께의 필름은 XPS 표면분석과 FT-IR, Solid-NMR을 이용하여 C-Si-O 네트워크 형성의 거동을 확인하였으며, 800 도 이상에서 나타나는 특징적인 free 탄소는 Raman을 이용하여 확인하였다.

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Synthesis and Characterization of Nanoporous Zirconia (나노세공 Zirconia의 합성 및 특성평가)

  • Woo, Seung-Sik;Kim, Ho-Kun
    • Journal of Powder Materials
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    • v.14 no.5
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    • pp.309-314
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    • 2007
  • Zirconia powders with nano size pores and high specific surface areas were synthesized via aqueous precipitation and hydrothermal synthetic method using $ZrOCl_28H_2O$ and $NH_4OH$ under pH=11 and ambient condition. By this reaction. zirconia hydrate $(ZrO_x(OH)_{4-2x})$ was primarily synthesized and the obtained zirconia hydrate was heat treated hydrothermally using an autoclave at various temperatures under pH=11. X-ray diffraction, Scanning electron microscopy, Energy dispersive X-ray spectroscopy, FT-IR, Raman, Particle size analysis, DTA-TG, and BET techniques were used for the characterization of the powder. The synthesized zirconia showed an amorphous phase, however, the phase was transformed to the crystalline state during the hydrothermal process. The observed crystalline phase above $160^{\circ}C$ was a mixed phase of monoclinic and tetragonal zirconia. By the BET analysis, it was found that the specific surface area was ranged in $126{\sim}276m^2/g$ and the zirconia had the cylindrical shaped pores with average diameter of $2{\sim}7nm$.

Field Emission Characteristics and Growth Analysis of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition (플라즈마 화학 기상 증착법을 이용한 탄소나노튜브의 성장 분석 및 전계방출 특성)

  • 오정근;주병권;김남수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1248-1254
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    • 2003
  • Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

Preparation of Micro-/Macroporous Carbons and Their Gas Sorption Properties

  • Hwang, Yong-Kyung;Shin, Hye-Seon;Hong, Jin-Yeon;Huh, Seong
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.377-382
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    • 2014
  • Micro-/macroporous carbons (MMCs) were prepared using a hollow mesoporous silica capsule (HMSC) as a sacrificial hard template. The carbonization process after the infiltration of furfuryl alcohol into the template-free HMSC material afforded MMC materials in high yield. The hard template HMSC could be removed by HF etching without deteriorating the structure of MMC. The MMC materials were fully characterized by SEM, TEM, PXRD, XPS, and Raman spectroscopy. The replication processes were so successful that MMCs exhibited a hollow capsular structure with multimodal microporosity. Detailed textural properties of MMC materials were investigated by volumetric $N_2$ adsorption-desorption analysis at 77 K. To explore the gas sorption abilities of MMCs for other gases, $H_2$ and $CO_2$ sorption analyses were also performed at various temperatures. The multimodal MMC materials were found to be good sorbents for both $H_2$ and $CO_2$ at low pressure.

An Oxidative Chloride Stripping Solution for 14K Gold Alloys

  • Kim, Kwangbae;Kim, Ikgyu;Song, Ohsung
    • Korean Journal of Materials Research
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    • v.30 no.8
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    • pp.393-398
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    • 2020
  • We propose a novel stripping solution containing acids (HCl and HNO3), an oxidant [(NH4)2S2O8], and complexing agents (NaCl and citric acid) to remove surface passivation layers from 14K gold alloys fabricated using an investment casting process. The optimized solution employing only HCl acid is determined by varying molar fractions of HCl and HNO3 on 14K yellow gold samples. Stripping properties are also identified for red and white gold alloy samples under the optimized stripping conditions. The removal of passivation layers, weight loss, and microstructure evolution are characterized using Raman spectroscopy, a precision scale, and optical microscopy. The proposed stripping solution effectively removes passivation layers more rapidly than conventional cyanide stripping. Weight loss increases linearly for up to 5 min for all 14K gold alloys. Red gold exhibits the greatest weight loss, followed by yellow gold and white gold. The results of microstructural analysis reveal that the conformal stripping occurs according to time. These results imply that the proposed oxidative chloride stripping might replace conventional cyanide stripping.

Pulsed Magnet ron Sputtering Deposit ion of DLC Films Part II : High-voltage Bias-assisted Deposition

  • Chun, Hui-Gon;Lee, Jing-Hyuk;You, Yong-Zoo;Ko, Yong-Duek;Cho, Tong-Yul;Nikolay S. Sochugov
    • Journal of the Korean institute of surface engineering
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    • v.36 no.2
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    • pp.148-154
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    • 2003
  • Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

Characterization of chemical vapor deposition-grown graphene films with various etchants

  • Choi, Hong-Kyw;Kim, Jong-Yun;Jeong, Hu-Young;Choi, Choon-Gi;Choi, Sung-Yool
    • Carbon letters
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    • v.13 no.1
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    • pp.44-47
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    • 2012
  • We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

Structure and optical properties of vapor grown In2O3: Ga nano-/microcrystals

  • Sanchez, Diego Leon;Ramon, Jesus Alberto Ramos;Zaldivar, Manuel Herrera;Pal, Umapada;Rosas, Efrain Rubio
    • Advances in nano research
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    • v.3 no.2
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    • pp.81-96
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    • 2015
  • Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

Synthesis of Si Nanowire/Multiwalled Carbon Nanotube Core-Shell Nanocomposites (실리콘 나노선/다중벽 탄소나노튜브 Core-Shell나노복합체의 합성)

  • Kim, Sung-Won;Lee, Hyun-Ju;Kim, Jun-Hee;Son, Chang-Sik;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.1
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    • pp.25-30
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    • 2010
  • Si nanowire/multiwalled carbon nanotube nanocomposite arrays were synthesized. Vertically aligned Si nanowire arrays were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type wafers using $HF/AgNO_3$ solution. The composite structure was synthesized by formation of a sheath of carbon multilayers on a Si nanowire template surface through a thermal CVD process under various conditions. The results of Raman spectroscopy, scanning electron microscopy, and high resolution transmission electron microcopy demonstrate that the obtained nanocomposite has a Si nanowire core/carbon nanotube shell structure. The remarkable feature of the proposed method is that the vertically aligned Si nanowire was encapsulated with a multiwalled carbon nanotube without metal catalysts, which is important for nanodevice fabrication. It can be expected that the introduction of Si nanowires into multiwalled carbon nanotubes may significantly alter their electronic and mechanical properties, and may even result in some unexpected material properties. The proposed method possesses great potential for fabricating other semiconductor/CNT nanocomposites.