• Journal of Power System Engineering
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• v.17 no.5
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• pp.23-29
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• 2013

The activation process is the key to graphene's practical application. In this study, the effect of grinding speed in planetary ball mill on structural integrity of graphene has been studied at various grinding speed such as 100 rpm, 200 rpm, 300 rpm, 400 rpm and 500 rpm. The morphology and structure of pristine graphene and ground graphenes were studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy respectively. According to these results, structural properties of graphene were improved when grinding speed was increased.

• Corrosion Science and Technology
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• v.15 no.2
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• pp.92-107
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• 2016

Graphene was coated on austenitic and martensitic stainless steels to simulate the metallic bipolar plate of proton exchange membrane fuel cell (PEMFC). Graphene oxide (GO) was synthesized and was reduced to reduced graphene oxide (rGO) via a hydrazine process. rGO was confirmed by FE-SEM, Raman spectroscopy and XPS. Interfacial contact resistance (ICR) between the bipolar plate and the gas diffusion layer (GDL) was measured to confirm the electrical conductivity. Both ICR and corrosion current density decreased on graphene coated stainless steels. Corrosion resistance was also improved with immersion time in cathodic environments and satisfied the criteria of the Department of Energy (DOE), USA. The total concentrations of metal ions dissolved from graphene coated stainless steels were reduced. Furthermore hydrophobicity was improved by increasing the contact angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.84-91
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• 2012

Single and few-layer graphene nanosheets (GNs) have successfully synthesized by a modified Hummer's method followed by chemical reduction of exfoliated graphene oxide (GO) in the presence of hydrazine monohydrate. GO and GNs were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffractions (XRD), Raman spectroscopy, Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Optical microscopy (OM) and by electrical conductivity measurements. The result showed that electrical conductivity of GNs was significantly improved, from $4.2{\times}10^{-4}$ S/m for GO to 12 S/m for GNs, possibly due to the removal of oxygen-containing functional group during chemical reduction. In addition, the $NO_2$ gas sensing characteristics of GNs are also discussed.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.113-116
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• 2008

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.512-518
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• 1996

Amorphous carbon nitride (a-C:N) multilayerfilms are formed by using altermating conditions during film deposition in are ion plating process. Because hard a-C:N films prepared with suitable megative bias voltages have large compressive stress, it is difficult to increase film thickness more than 200nm. Preparing multilayer films composed of hard layers and soft layers, we can grow thick multilayer films on Si and SKH steel substrate. The total thickness of multilayer films is more than 1$\mu\textrm{m}$. The multilayer films are several times thicker than the single layer films and almost equal in hardness and internal stress to the single layer ones. X-ray photoelectron spectroscopy(XPS) and Raman spectroscopy reveal that multilayer films equal to single layer films in structure, which is similar to the structure of DLC films.

• Journal of Powder Materials
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• v.8 no.4
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• pp.239-244
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• 2001

To investigate the effect of process parameters on selective laser sintering of Cu/polyamide mixed powder, Cu/polyamide mixed powder was sintered by selective laser with changing laser power and scanning speed. The properties of sintered body were evaluated by measuring the density and tensile strength, and analysis of XRD, FT-Raman and microstructure. With an increase in the laser power, the density and ultimate tensile strength of sintered Cu/polyamide body increase and then decrease. The maximum values of the density and ultimate tensile strength were decreased with increasing laser scanning speed. These changes were concerned with the difference of irradiation energy of laser into the powder layer. It was considered that the change of the mechanical property of the sintered body with irradiation energy of laser is due to the changes of amount of copper particle and property of polyamide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Current Optics and Photonics
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• v.3 no.3
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• pp.243-247
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• 2019

We have developed a compact, wavelength-selectable, Q-switched Nd:YAG laser at mid ultraviolet for chemical warfare agent detection. The fundamental wave at 1064 nm is delivered by a pulsed solid state laser incorporating with a square-type Nd:YAG rod in a resonator closed by two crossed Porro prisms for environmental reliability. The output energy at 213 nm ($5{\omega}$) and 266 nm ($4{\omega}$) by ${\chi}^{(2)}$ process in the sequentially disposed BBO crystals are measured to be 6.8 mJ and 15.1 mJ, respectively. The output wavelength is selected for $5{\omega}$ and $4{\omega}$ by a motorized wavelength switch. The energy ratio of the $5{\omega}$ to the $4{\omega}$ is varied from 0.05 to 0.85 by controlling the phase matching temperature of the nonlinear crystal for sum-frequency generation without change of the output pulse parameters.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.1081-1081
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• 2001

The constant need for quality improvement and production rationalization in the chemical and related industries has led to the increasing replacement of conservative control procedures by more specific and environmentally compatible analytical techniques. In this respect, vibrational spectroscopy has developed over the last yews - in combination with new instrumental accessories and statistical evaluation procedures - to one of the most important analytical tools for industrial chemical quality control and process monitoring in a wide field of applications. In the present communication this potential is demonstrated in order to further support the implementation of mid-infrared (MIR), near-infrared (NIR) and Raman spectroscopy Primarily as industrial on-line tools. To this end the data of selected feasibility studies will be discussed in terms of the individual strengths of the different techniques for the respective application.