• 공업화학
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• 제33권1호
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• pp.64-70
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• 2022

본 연구에서는 NH₃-SCR에서 VWTi촉매의 저온 탈질효율 증진을 위해 Sb을 첨가하여 실험을 수행하였으며 Sb 첨가에 있어 다양한 소성온도(400~700 ℃)에서 제조하였다. NH₃-SCR 실험 결과 Sb 소성온도 500~600 ℃에 해당하는 VWSbTi(500)와 VWSbTi(600) 촉매가 300 ℃ 이하의 저온에서 가장 우수한 탈질성능을 나타냈으며, 소성온도에 따른 물리화학적 특성을 확인하고자 BET, XRD, Raman, XPS, H₂-TPR, NH₃-TPD 분석을 수행하였다. VWSbTi(500)와 VWSbTi(600)의 경우 W=O종의 생성에 따라 암모니아 산점이 증가하였으며 텅스텐의 전자밀도 증가에 따른 우수한 redox 특성으로 저온에서 우수한 활성을 나타내었다. 또한 VWSbTi(700)의 경우 V₂O₅ 결정구조가 형성되어 활성이 저하됨에 따라 Sb 첨가과정에 있어 최적의 소성온도를 확인하였다.

• 공업화학
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• 제33권5호
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• pp.482-487
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• 2022

본 연구에서는 V/TiO₂ 촉매를 사용하여 황화수소 상온 제거 특성을 평가하기 위해 촉매 활성 실험 및 특성 분석을 수행하였다. 최적 바나듐 함량은 10 wt%였고, 상대습도 60~80% 조건에서 60분 이상의 내구성을 보였다. BET 및 raman 분석을 통해, 표면에 노출된 바나듐의 구조가 V/TiO₂ 촉매 활성의 지배적인 요인인 것으로 나타났다. 또한 SEM, EDS 그리고 XRD 분석은 촉매 표면에 생성물인 황이 축적될 수 있음을 보였으며, 결과적으로 촉매의 내구성이 감소되었다. 따라서 촉매 산화와 재생 공정의 연계가 필요할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• 한국재료학회지
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• 제24권8호
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• pp.407-412
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• 2014

Currently, diopside ($MgCaSi_2O_6$) crystal glaze is used frequently for pottery works or in earthen wares, though the process is not straightforward. However, to create and control the positions and sizes of the crystals in desired amounts when making pottery is difficult. To solve this problem, a diopside crystal seed was created at a temperature of $1450^{\circ}C$. After planting this seed in the glaze, a glaze combination and firing process which allows a user to create crystals with the desired position and at the desired size were established. In addition, in order to investigate the creation process of the crystals, the growth patterns of the crystals were observed and examined using Raman spectrography and XRD and SEM analyses. As a result, the optimum synthesis condition of the diopside seed was created by mixing 1 mole of $CaCo_3$, 0.2 mole of $(MgCo_3)_4(MgCoH)_2{\cdot}5H_2O$ and 2 moles of $SiO_2$ and then applying a firing process to the mixture at $1,450^{\circ}C$ for 30 minutes. The optimum glaze content of the seed was 70 % feldspar, 20 % limestone and 10 % $MgCo_3$. For the firing process, it was confirmed that the size of crystal is larger with a longer firing time at $1100^{\circ}C$ by completing a two-hour process at $1280^{\circ}C$. In addition, the diopside crystal has columnar structure and is less than $1{\mu}m$ in size.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.269-274
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• 1997

Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500$^{\circ}C$ and C/Si ratio 2.0.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.147-148
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• 2002

This study made use of four kinds of mating balls that were made with stainless steel but subjected to different annealing conditions in order to achieve different levels of hardness. In all load conditions, testing results demonstrated that the harder the mating materials, the lower the friction coefficient was. Conversely, the high friction coefficient found in soft martensite balls appeared to be caused by the larger contact area between the DLC film and the ball. Raman Spectra analysis showed that the transferred materials were a kind of graphite and that the contact surface of the DLC film seemed to undergo a phase transition from carbon to graphite during the high friction process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.402.2-402.2
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• 2016

In photoelectrochemical (PEC) water splitting, Cu2ZnSnS4 (CZTS) compound has attracted intense attention as a photocathode due to not only large optical absorption coefficient, but also earth-abundance of constituent elements and suitable band alignment. With rapid development of nanotechnology, one-dimensional nanostructures of CZTS have been investigated as a potential form to achieve high efficiency because the nanostructures are expected to be capable of capturing more light and enhancing charge separation and transport. Here, we report a well-controlled fabrication route for vertically-aligned CZTS nanorod arrays on anodic aluminium oxide (AAO) template via simple sol-gel process followed by deposition of ZnS or CdS buffer layers on the CZTS nanorod to enhance charge separation. The structure, morphology, composition, optical absorption, and PEC properties of the resulting CZTS nanorod samples were characterized using X-ray diffraction, Raman spectroscopy, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.