• International Journal of Aeronautical and Space Sciences
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• v.11 no.3
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• pp.240-245
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• 2010

The controller of a model reference adaptive control monitors the plant's inputs and outputs to acknowledge its characteristics. It then adapts itself to the characteristics it encounters instead of behaving in a fixed manner. An important part of every adaptive scheme is the adaptive law for estimating the unknown parameters on line. A more precise model is required to improve performance and to stabilize a given dynamic system, such as a satellite in which performance varies over time and the coefficients change due to disturbances, etc. After model identification, the robust controller ($H{\infty}$) is designed to stabilize the rigid body and flexible body of a satellite, which can be perturbed due to disturbance. The result obtained by the $H{\infty}$ controller is compared with that of the proportional and integration controller which is commonly used for stabilizing a satellite.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.165-168
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• 2008

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.20-27
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• 2014

The power consumption pattern of high-speed railway has rarely during night time. But, during service time, the power is consumed irregularly related to train operation. Especially certain unusual about 1-2 days of service time interval to indicate the power consumption is rapidly growing phenomenon, which causes the capacity of the power contract is the annual electricity bill to rise rapidly as the cause. Normally, amount of peak power consumption bill rate at railway substation is over 20% of total electrical bill. Therefore, high-speed railway substation is expected to be considerably larger savings by reducing the peak power of the default charge(demand power).

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1558-1565
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• 2015

In this paper, we propose a new method for detecting bearing faults using vibration signals. The proposed method is based on support vector machines (SVMs), which treat the harmonics of fault-related frequencies from vibration signals as fault indices. Using SVMs, the cross-validations are used for a training process, and a two-stage classification process is used for detecting bearing faults and their status. The proposed approach is applied to outer-race bearing fault detection in three-phase squirrel-cage induction motors. The experimental results show that the proposed method can effectively identify the bearing faults and their status, hence improving the accuracy of fault diagnosis.

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.1388-1391
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• 2010

Recently, the construction of road, subway, railroad, and microtunnel for electricity supplement have been increased because of increasement of traffic in urban area, increasement of industrial transportation, and the network between cities in Korea. The deterioration of tunnel structure may occur by various internal and external factors and particularly, tunnel structures tend to contact with either underground water or harmful ions. Therefore, leakage sometimes occurred through the cracks and joints of concrete lining. The leakage in tunnel may affect the durability of concrete lining. In this study, to evaluate the durability and deterioration of concrete lining in tunnel structures, we were performed the various experiments for compressive strength. Compressive strength obtained from nondestructive inspection and compressive strength test varies according to the concrete lining conditions.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.52-58
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• 2003

The application of a sliding mode control for improving the dynamic response of an induction motor based speed control system is presented in this paper and provides attractive features, such as fast response, good transient performance, and insensitivity to variations in plant parameters and external disturbance. However, chattering is a difficult problem for which the sliding mode control is a popular solution. This paper presents a new fuzzy-sliding mode controller for a sensorless vector-controlled induction motor servo system to practically eliminate the chattering problem for traction applications. A DSP based implementation of the speed control system is employed. Experimental results are presented using a propulsion system simulator. The performance of the drive is shown to be practically free from chattering.

• Proceedings of the KSR Conference
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• 2010.06a
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• pp.2258-2261
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• 2010

Since national mid-term target for GHG reduction was determined in 2009, various efforts in transportations have been prepared. Generally, the GHG emission of transportation is calculated using the emission factor published from IPCC guideline(2006). However, it is necessary to develop new emission factors considering the properties of transportation as well as fuel. In Korean railroad, main emission sources are the consumption of diesel and electricity from railcar operation. The GHG emission of electric-powered railcars can be estimated using national electric emission factor, but diesel-powered railcars show different trends. The purpose of this study was to establish the development plans of emission factors for diesel-powered railcars. As a result, the emission factors of diesel-powered railcars were classified into railcar type, engine type and life cycle, notch, load, and traffic volume. In future, several emission factors with this category will be presented quantitatively through field tests with the order of priority.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• ETRI Journal
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• v.27 no.4
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• pp.449-452
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• 2005

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.