• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.32.5-32
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• 2002

Processing plasmas are playing a crucial role in either depositing thin films or etching fine patterns. Any variability in process factors (such as radio frequency power or pressure) can cause a significant shift in plasma state. When this shift becomes large enough to change operating condition beyond an acceptable level, overall product quality can greatly be jeopardized. Thus, timely and accurate diagnosis of plasma malfunction is crucial to maintaining device yield and throughput. Many diagnostic systems have been developed, including HIPOCRATES [1] and PIES [2]. Plasma equipment was also diagnosed by combining neural network and expert system called Dempster-Schafer Theory [3]. A fact c...

• 전기의세계
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• v.42 no.1
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• pp.5-11
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• 1993

금속이나 세라믹 입자를 용사하여 보호피막을 형성하는 기술은 화염을 사용하는 방법에서 시작했으며 용사재료는 분말, 선, 봉의 형태로 공급되었다. 1960년대에 상업적인 plasma 용사장비가 개발되었으며 여기서 사용된 D.C.plasma jet를 이용하여 분말형태의 용사재료를 용융하고 고속으로 피용사테에 용융입자를 분사하여 피용사체면에 충돌시켜 다층의 얇은 피막을 형성한다. 최근(1985년)에는 R.F.(Radio Frequency) Plasma를 이용하여 열전도도가 작은 재료나 산소와 반응성이 큰 재료를 용사하는 방법도 개발되고 있다. 용사피복법은 현재 여러가지 방법이 실용되고 있으며 재료를 용융하는 열원에 따라 분류하면 표1과 같다. 즉 산소와 연료 가스의 혼합에 의한 연소나 폭발에너지를 이용하는 가스식 용사법과 Arc, Plasma등의 전기 에너지를 이용하는 전기식 용사법으로 크게 나눌 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.150-152
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Ne discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.167-170
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.496-500
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

• The Journal of Korean Physical Therapy
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• v.16 no.3
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• pp.22-31
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• 2004

The purpose of this study was to demonstrate the effects of silver spike point (SSP) low frequency electrical stimulation on plasma ${\beta}-endorphin$ activities measured by radio- immunoassay from normal volunteer and the effects of ${\beta}-endorphin$ on 5-hydroxytryptamine (5-HT, serotonin)-induced contraction investigated by isometric tension methode in rats. The current of 3 Hz continue type, but not 100 Hz continue type, of SSP low frequency electrical stimulation significantly increased in plasma ${\beta}-endorphin$ from normal volunteer. The endothelial cell-dependent 5-HT-induced contractions were inhibited by ${\beta}-endorphin$ $1{\mu}M$. These results suggest that the ${\beta}-endorphin$ regulates nociceptive-like substance, such as 5-HT, in part and that the SSP low frequency electrical stimulation, specifically current of low frequency of 3 Hz continue type, significantly increases plasma ${\beta}-endorphin$ from normal volunteer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.73-73
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• 2001

Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.190-193
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• 2012

Transparent diamond-like carbon (DLC) films were synthesized on glass using radio frequency plasma enhanced chemical vapor deposition method from the gas mixture of $CH_4$, $SiH_4$ and Ar. The pressure, the rf-power, $CH_4/SiH_4/Ar$ ratio, and the deposition time were 0.1Torr, 100W, 20 : 1 : 1, and 20 min, respectively. The optical transmittances of DLC-deposited glass and uncoated glass were compared with each other in the visible light regions. The DLC-deposited glass showed transmittance of approximately 83 % and 95 % as compared to the uncoated glass for the wavelength of 380 nm and 500 nm, respectively. The hardness and roughness of DLC-coated glass have been measured by nanoindentation and AFM, respectively. The DLC-coated glass showed a little less or similar optical transmittance compared to the uncoated glass, while the hardness of DLC-coated glass was 2.5 times higher than that of the uncoated glass. The deposited DLC film had the very smooth surface and was thicker than 150 nm after deposition for 20 min.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.424-430
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• 2001

An electron Boltzmann equation is solved numerically to calculate the electron energy distribution functions in plasma discharge which is generated by radio-frequency (RF) and microwave frequency electric field. The maintenance field strengths are determined self-consistently by solving the homogeneous electron Boltzmann equation in the Lorentz approximation expressed by 2nd order differential equation and an additional particle balance equation expressed by integro-differential equation. By using this numerical code, the electron energy distribution functions in argon discharge are calculated in the range from RF to microwave frequency. The influence of frequency of the HF electric field on the electron energy distribution functions and ionization rate are investigated.