• Title/Summary/Keyword: Radial Uniformity

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NEW EVALUATION METHODS FOR RADIAL UNIFORMITY IN NEUTRON TRANSMUTATION DOPING

  • Kim, Hak-Sung;Lim, Jae-Yong;Pyeon, Cheol-Ho;Misawa, Tsuyoshi;Shiroya, Seiji;Park, Sang-Jun;Kim, Myong-Seop;Oh, Soo-Youl;Jun, Byung-Jin
    • Nuclear Engineering and Technology
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    • v.42 no.4
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    • pp.442-449
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    • 2010
  • Recently, the neutron irradiation for large diameter silicon (Si)-ingots of more than 8" diameter is requested to satisfy the demand for the neutron transmutation doping silicon (NTD-Si). By increasing the Si-ingot diameter, the radial non-uniformity becomes larger due to the neutron attenuation effect, which results in a limit of the feasible diameter of the Si-ingot. The current evaluation method has a certain limit to precisely evaluate the radial uniformity of Si-ingot because the current evaluation method does not consider the effect of the Si-ingot diameter on the radial uniformity. The objective of this study is to propose a new evaluation method of radial uniformity by improving the conventional evaluation approach. To precisely predict the radial uniformity of a Si-ingot with large diameter, numerical verification is conducted through comparison with the measured data and introducing the new evaluation method. A new concept of a gradient is introduced as an alternative approach of radial uniformity evaluation instead of the radial resistivity gradient (RRG) interpretation. Using the new concept of gradient, the normalized reaction rate gradient (NRG) and the surface normalized reaction rate gradient (SNRG) are described. By introducing NRG, the radial uniformity can be evaluated with one certain standard regardless of the ingot diameter and irradiation condition. Furthermore, by introducing SNRG, the uniformity on the Si-ingot surface, which is ignored by RRG and NRG, can be evaluated successfully. Finally, the radial uniformity flattening methods are installed by the stainless steel thermal neutron filter and additional Si-pipe to reduce SNRG.

A Study on Tire Radial Force Variation and Modal Testing (타이어 상하 힘변동과 모드 시험에 관한 연구)

  • Park, S.K.;Kim, J.K.;Song, S.K.
    • Journal of Power System Engineering
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    • v.2 no.3
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    • pp.55-59
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    • 1998
  • This paper probes into the influence of tire uniformity on tire's modal parameters with the method of experimental modal analysis. Two radial tires of the same kind with different uniformity level are taken to be tested at different exciting points and real modal parameters are abstracted. The differences of their modal parameters are presented. Then tire transfer functions are constructed with experimental modal parameters and ideal modal parameters respectively. It is found that the measured transfer functions of tire of good uniformity are closer to ideal transfer function than that of tire of bad uniformity. The study shows evident interrelation of experimental modal parameters and tire uniformity, and further study should be of great value.

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RADIAL UNIFORMITY OF NEUTRON IRRADIATION IN SILICON INGOTS FOR NEUTRON TRANSMUTATION DOPING AT HANARO

  • KIM MYONG-SEOP;LEE CHOONG-SUNG;OH SOO-YOUL;HWANG SUNG-YUL;JUN BYUNG-JIN
    • Nuclear Engineering and Technology
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    • v.38 no.1
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    • pp.93-98
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    • 2006
  • The radial uniformity of neutron irradiation in silicon ingots for neutron transmutation doping (NTD) at HANARO is examined by both calculations and measurements. HANARO has two NTD holes named NTD1 and NTD2. We have been using the NTD2 hole for 5 in. NTD commercial service, and we intend to use two holes for 6 in. NTD. The objective of this study is to predict the radial uniformity of 6 in. NTD at the two holes. The radial neutron flux distributions inside single crystal and noncrystal silicon loaded at the NTD2 hole are calculated by the VENTURE code. For NTD1, the radial distributions of the reaction rate for a 6 in. NTD with a neutron screen are calculated by MCNP, and measured by gold wire activation. The results of the measurements are compared with those of the calculations. From the VENTURE calculation, it is confirmed that the neutron flux distribution in the single crystal silicon is much flatter than that in the non-crystal silicon. The non-uniformities of the measurements for radial neutron irradiation are slightly larger than those of the calculations. However, excluding local dips in the measurements, the overall trends of the distributions are similar. The radial resistivity gradient (RRG) for a 5 in. silicon ingot is estimated to be about $1.5\%$. For a 6 in. ingot, the RRG of a silicon ingot irradiated at HANARO is predicted to be about $2.1\%$. Also, from the experimental results, we expect that the RRG would not be larger than $4.4\%$.

Radial uniformity problem in RFI ionized magnetron sputtering (RFI ionized magnetron sputtering에서 radial uniformity 문제)

  • 주정훈
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.85-90
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    • 1997
  • A new ionized sputtering process was developed to fill small trench or via using additional ionizing mechanism of sputtered particles from 32cm $AlCu_x$(x=0.5%) cathode target with rotating magnet, then drawn toward substrate by small negative DC potential. The radial uniformity in RFI magnetron sputtering was studied by plasma diagnosis and appropriate RFI coil design to improve it. Optical emission intensities of excited species. $Ar^{\circ}, \;Ar^+;Al^+, \;Al^{\circ}$ are measured across the radial direction and showed close correlation with deposit's bottom to top thickness ratios in trenches and vias of submicron opening and 1.5 aspect ratio. After increase of the diameter of RF coil from 29 cm to 32 cm and improved the power leading feedthrough symmetry by removal of asymmetric single turn region, there was an increase of uniformity from 7.5% to 1.5% in bottom to top thickness ratio in 0.6 $\mu\textrm{m}$ vias.

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Effect of argon flow on the quality of Czochralski silicon crystal (쵸크랄스키 실리콘 단결정의 특성에 미치는 아르곤 유동의 영향)

  • 김정민;이홍우;최준영;유학도
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.2
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    • pp.91-95
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    • 2000
  • The effects of argon gas flow on the axial temperature gradient near the interface, the oxygen concentration, and the radial oxygen uniformity was investigated for 8-inch CZ silicon growth. As argon flow rate was increased, the temperature gradient was increased in the crystal near the crystavmelt interface and the oxygen content in the crystal was decreased. But the radial oxygen uniformity was deteriorated. It was found that argon flow is one of the important growing parameters to affect the quality of crystals such as oxygen content and uniformity.

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Axial and Radial Distributions of Bubble Holdup in a Slurry Bubble Column with Pilot Plant Scale (파일럿규모 슬러리 기포탑에서 기포체류량의 축방향, 반경방향 분포)

  • Lim, Dae-Ho;Jang, Ji-Hwa;Kang, Yong;Jun, Ki-Won
    • Korean Chemical Engineering Research
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    • v.49 no.2
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    • pp.200-205
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    • 2011
  • Axial and radial distributions of bubble holdup were investigated in a slurry bubble column with pilot plant scale(D=1.0 m). Effects of gas velocity, surface tension of continuous liquid medium and solid fraction in the slurry phase on the axial and radial distributions of bubble holdup were examined. The bubble holdup decreased with increasing radial dimensionless distance from the center of the column, while it increased with increasing dimensionless distance in the axial direction from the distributor, in all the cases studied. The radial non-uniformity of bubble holdup increased with increasing gas velocity but decreasing surface tension of liquid medium, while it was not dependent upon the solid fraction in the slurry phase. The axial non-uniformity of bubble holdup increased with increasing gas velocity, but it does not change considerably with variations of liquid surface tension or solid fraction in the slurry phase . The axial and radial distributions of bubble holdup were well correlated in terms of operating variables within this experimental conditions.

Modeling of Process Plasma Using a Radial Basis Function Network: A Cases Study

  • Kim, Byungwhan;Sungjin Rark
    • Transactions on Control, Automation and Systems Engineering
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    • v.2 no.4
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    • pp.268-273
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    • 2000
  • Plasma models are crucial to equipment design and process optimization. A radial basis function network(RBFN) in con-junction with statistical experimental design has been used to model a process plasma. A 2$^4$ full factorial experiment was employed to characterized a hemispherical inductively coupled plasma(HICP) in characterizing HICP, the factors that were varied in the design include source power, pressure, position of shuck holder, and Cl$_2$ flow rate. Using a Langmuir probe, plasma attributes were collected, which include typical electron density, electron temperature. and plasma potential as well as their spatial uniformity. Root mean-squared prediction errors of RBEN are 0.409(10(sup)12/㎤), 0.277(eV), and 0.699(V), for electron density, electron temperature, and Plasma potential, respectively. For spatial uniformity data, they are 2.623(10(sup)12/㎤), 5.704(eV) and 3.481(V), for electron density, electron temperature, and plasma potential, respectively. Comparisons with generalized regression neural network(GRNN) revealed an improved prediction accuracy of RBFN as well as a comparable performance between GRNN and statistical response surface model. Both RBEN and GRNN, however, experienced difficulties in generalizing training data with smaller standard deviation.

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Analysis of Si Etch Uniformity of Very High Frequency Driven - Capacitively Coupled Ar/SF6 Plasmas (VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석)

  • Lim, Seongjae;Lee, Ingyu;Lee, Haneul;Son, Sung Hyun;Kim, Gon-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.72-77
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    • 2021
  • The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R2 value. It means that the etch rate distribution is explained by the ion energy flux.

Modeling of Electron Density Non-Uniformity by Using Radial Basis Function Network and Genetic Algorithm (레이디얼 베이시스 함수망과 유전자 알고리즘을 이용한 플라즈마 전자밀도 모델링)

  • Gim, Su-Yeon;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1799-1800
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    • 2007
  • Radial Basis Function Network (RBFN)을 이용하여 플라즈마 전자밀도를 모델링하였다. RBFN의 예측성능은 학습인자의 함수로 최적화하였다. 체계적인 모델링을 위해 통계적인 실험계획법이 적용되었으며, 실험은 반구형 유도 결합형 플라즈마 장비를 이용하여 수행이 되었다. 전자밀도 측정에는 Langmuir probe가 이용되었다. 최적화된 GA-RBFN모델을 일반 RBFN모델과 비교하였으며, 11%정도 모델의 예측성능을 향상시켰다.

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Modeling of Electron Density Non-Uniformity by Using Radial Basis Function Network (레이디얼 베이시스 함수망을 이용한 플라즈마 전자밀도 균일도 모델링)

  • Kim, Ga-Young;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1938-1939
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    • 2007
  • Radial Basis Function Network (RBFN)을 이용하여 플라즈마 전자밀도를 모델링하였다. RBFN의 예측성능은 학습인자의 함수로 최적화하였다. 체계적인 모델링을 위해 통계적인 실험계획법이 적용되었으며, 실험은 반구형 유도결합형 플라즈마 장비를 이용하여 수행이 되었다. 전자밀도측정에는 Langmuir probe가 이용되었다. 최적화된 RBFN모델을 통계적인 회귀 모델과 비교하였으며, 59%정도 모델의 예측성능을 향상시켰다.

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