• Title/Summary/Keyword: RTA annealing

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Nanoparticulate Co-Ferrite Thin Films on Glass Substrate Prepared by Sol-Gel Method (유리기판에 sol-gel법으로 제조된 나노입자 Co-ferrite 박막의 특성)

  • 오영제;최현석;최세영
    • Journal of the Korean Ceramic Society
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    • v.37 no.5
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    • pp.425-431
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    • 2000
  • Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

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Effect of rapid thermal annealing on InGaP/InGaAlP multiple quantum well structures grown by molecular beam epitaxy (MBE 성장 InGaP/InGaAlP 다중양자우물의 RTA 에 의한 PL 특성 변화)

  • Park, Gwang-Uk;Park, Chang-Yeong;Im, Jae-Mun;Lee, Yong-Tak
    • Proceedings of the Optical Society of Korea Conference
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    • 2009.02a
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    • pp.525-526
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    • 2009
  • we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

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Fabrication of MILC poly-Si TFT using scanning-RTA and light absorption layer

  • Pyo, Yu-Jin;Kim, Min-Sun;Kim, Young-Soo;Song, Nam-Kyu;Joo, Seung-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.307-309
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    • 2005
  • We investigated light absorption layer effect on metal-induced lateral crystallization (MILC) growth rate and MILC thin films transistors (TFTs). As annealing method, we used scanning-rapid thermal annealing (RTA). MILC growth rate which was crystallized by light absorption layer and using scanning-RTA was 3 times than normal MILC which was without light absorption layer growth rate. Also we compared MILC TFTs characteristics which were combined to light absorption layer with conventional MILC TFTs. After scanning-RTA process, MILC-TFTs which were with light absorption layer were superior to conventional MILC-TFTs. With this new MILC-TFTs structure, we could reduced crystallization time and obtain good electrical properties.

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Effects of Rapid Thermal Anneal on the Magnetoresistive Properties of Magnetic Tunnel Junction

  • Lee, K.I.;Lee, J.H.;K. Rhie;J.G. Ha;K.H. Shin
    • Journal of Magnetics
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    • v.6 no.4
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    • pp.126-128
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    • 2001
  • The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

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Effects of Rapid Thermal Annealing on the Conduction of a-IGZO Films (급속 열처리가 a-IGZO 박막의 전도에 미치는 영향)

  • Kim, Do-Hoon;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.1
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    • pp.11-16
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    • 2016
  • The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

(A Study on the Annealing Methods for the Formation of Shallow Junctions) (박막 접합 형성을 위한 열처리 방법에 관한 연구)

  • 한명석;김재영;이충근;홍신남
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.39 no.1
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    • pp.31-36
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    • 2002
  • Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

Properties of Dinickel-Silicides Counter Electrodes with Rapid Thermal Annealing

  • Kim, Kwangbae;Noh, Yunyoung;Song, Ohsung
    • Korean Journal of Materials Research
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    • v.27 no.2
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    • pp.94-99
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    • 2017
  • Dinickel-silicide $(Ni_2Si)/glass$ was employed as a counter electrode for a dye-sensitized solar cell (DSSC) device. $Ni_2Si$ was formed by rapid thermal annealing (RTA) at $700^{\circ}C$ for 15 seconds of a 50 nm-Ni/50 nm-Si/glass structure. For comparison, $Ni_2Si$ on quartz was also prepared through conventional electric furnace annealing (CEA) at $800^{\circ}C$ for 30 minutes. XRD, XPS, and EDS line scanning of TEM were used to confirm the formation of $Ni_2Si$. TEM and CV were employed to confirm the microstructure and catalytic activity. Photovoltaic properties were examined using a solar simulator and potentiostat. XRD, XPS, and EDS line scanning results showed that both CEA and RTA successfully led to tne formation of nano $thick-Ni_2Si$ phase. The catalytic activity of $CEA-Ni_2Si$ and $RTA-Ni_2Si$ with respect to Pt were 68 % and 56 %. Energy conversion efficiencies (ECEs) of DSSCs with $CEA-Ni_2Si$ and $RTA-Ni_2Si$catalysts were 3.66 % and 3.16 %, respectively. Our results imply that nano-thick $Ni_2Si$ may be used to replace Pt as a reduction catalytic layer for a DSSCs. Moreover, we show that nano-thick $Ni_2Si$ can be made available on a low-cost glass substrate via the RTA process.

Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature (급속 열처리 온도 변화에 따른 AZO 박막의 구조, 전기 및 광학적 특성)

  • Jung, Jae-Yong;Cho, Shin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.280-286
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    • 2010
  • We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

Characteristics of ZnO thin films depending on Rapid Thermal Annealing (Rapid Thermal Annealing 후열처리 조건에 따른 ZnO 박막의 특성)

  • Kim, Ji-Hong;Cho, Dae-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.120-121
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    • 2007
  • In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

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The Influence of Rapid Thermal Annealing Processed Metal-Semiconductor Contact on Plasmonic Waveguide Under Electrical Pumping

  • Lu, Yang;Zhang, Hui;Mei, Ting
    • Journal of the Optical Society of Korea
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    • v.20 no.1
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    • pp.130-134
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    • 2016
  • The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.