• Title/Summary/Keyword: RTA annealing

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Dependence of luminescence property of ZnMgS:Mn thin film phosphor on RTA temperature (ZnMgS:Mn 박막 형광체의 RTA 온도 변화에 따른 발광 특성 의존성)

  • Lee, Dong-Chin;Yun, Sun-Jin;Jeon, Duk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.102-105
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    • 2004
  • With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

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Characterizations of Interface-state Density between Top Silicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.83-88
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    • 2005
  • The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

Shallow P+-n Junction Formation and the Design of Boron Diffusion Simulator (박막 P+-n 접합 형성과 보론 확산 시뮬레이터 설계)

  • 김재영;이충근;김보라;홍신남
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.708-712
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    • 2004
  • Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

Effect of Dry Process on Dielectric Properties of PZT Thin Films Prepared by Sol-Gel Process

  • Bae, Min-Ho;Lim, Kee-Joe;Kim, Hyun-Hoo;No, Kwang-soo
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.42-45
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    • 2002
  • Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

Study on Self-Organized Ru Dots Using ALD and Low Temperature Rapid Thermal Annealing Process (ALD와 저온 RTA를 이용한 자가정렬 Ru 응집체의 제조와 물성)

  • Park, Jongseung;Noh, Yunyoung;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.50 no.8
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    • pp.557-562
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    • 2012
  • Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

Effects of RTA on the Properties of SBNO Thin Film (SBNO 박막의 특성에 미치는 RTA 영향)

  • Kim, Jin-Sa
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.926-929
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    • 2012
  • The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

Direct Bonding of Heterogeneous Insulator Silicon Pairs using Various Annealing Method (열처리 방법에 따른 이종절연층 실리콘 기판쌍의 직접접합)

  • 송오성;이기영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.859-864
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    • 2003
  • We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films (졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용)

  • 김광호
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.152-156
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    • 1994
  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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The effect of rapid thermal annealing treatment for ferroelectric properties of PZT thin films (RTA를 이용한 후열처리가 PZT 박막의 강유전 특성에 미치는 영향)

  • Ju, Pil-Yeon;Park, Young;Jeong, Kyu-Won;Lim, Dong-Gun;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.136-139
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    • 1999
  • The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

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A Study on Electrical Properties of Sol-gel Derived Bi3.25La0.75Ti3O12 Thin Films by Rapid Thermal Annealing (Sol-gel법으로 제조한 강유전성 Bi3.25La0.75Ti3O12박막의 급속열처리에 따른 전기적 특성에 관한 연구)

  • 이인재;김병호
    • Journal of the Korean Ceramic Society
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    • v.40 no.12
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    • pp.1189-1196
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    • 2003
  • Ferroelectric B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) solution was synthesized by sol-gel process. BLT thin films were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. In this experiments, Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, and Ti(IV) i-propoxide were used as starting materials, which were dissolved in 2-Methoxyethanol. Rapid Thermal Annealing (RTA) was used to promote crystallization of BLT thin films. The thin films with RTA process were compared with those with non-RTA process on electrical properties. After RTA process, the remanent polarization value (2Pr) of BLT thin films annealed at 72$0^{\circ}C$ was 20.46 $\mu$C/$\textrm{cm}^2$ which was approximately 27% higher than that of non-RTA process at 5 V.