• 제목/요약/키워드: RTA(Rapid Thermal Annealing)

검색결과 337건 처리시간 0.028초

급속열처리가 다결정 CdTe 박막의 물성에 미치는 효과에 관한 연구 (Effects of rapid thermal annealing on Physical properties of polycrystalline CdTe thin films)

  • 조영아;이용혁;윤종구;오경희;염근영;신성호;박광자
    • 한국진공학회지
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    • 제5권4호
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    • pp.348-353
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    • 1996
  • CdS/ITO/glass 기판위에 다결정 CdTe 박막을 진공증착법으로 제조한 후 급속열처리하여 열처리 온도와 가스분위기가 CdTe의 박막의 물성과 전지특성에 미치는 효과를 연구하였다. $450^{\circ}C$에서 $550^{\circ}C$까지 공기중 급속열처리한 경우 박막은 EDX 조성분석결과 화학양론비를 유지하였고 표면성분비는 Cd-rich 상태였으나 전처리후 저저항 contact 제조에 유리한 Te-rich 상태로 변화되었다. TEM과 micro-EDX 결과 급속열처리 전후 모두 CdTe는 주상정구조가 관찰되었고 열처리동안 CdTe내로 확산된 S의 양이 로열처리와 비교하여 매우 적음을 알 수 있었다. 급속열처리 온도가 가스분위기 조건 중 공기 중에서 $550^{\circ}C$ 열처리하였을 때 가장 우수한 태양전지효율을 나타내었다.

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스퍼터링으로 제조한 새로운 완충막 위의 PZT 박막 특성에 관한 연구 (A Study on the Characteristic of PZT Thin Film Deposited on New Buffer Layer by Sputtering)

  • 주재현;주승기
    • 한국세라믹학회지
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    • 제30권4호
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    • pp.332-338
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    • 1993
  • TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{\circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($\varepsilon$r) increased and then showed Pr=21 $\varepsilon$r=593 when rapid thermal annealed 80$0^{\circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.

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진공 증발법에 의해 제조된 플립 칩 본딩용 솔더의 미세 구조분석 (Microstructure Characterization of the Solders Deposited by Thermal Evaporation for Flip Chip Bonding)

  • 이충식;김영호;권오경;한학수;주관종;김동구
    • 한국표면공학회지
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    • 제28권2호
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    • pp.67-76
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    • 1995
  • The microstructure of 95wt.%Pb/5wt.%Sn and 63wt.%Sn/37wt.%Pb solders for flip chip bonding process has been characterized. Solders were deposited by thermal evaporation and reflowed in the conventional furnace or by rapid thermal annealing(RTA) process. As-deposited films show columnar structure. The microstructure of furnace cooled 63Sn/37Pb solder shows typical lamellar form, but that of RTA treated solder has the structure showing an uniform dispersion of Pb-rich phase in Sn matrix. The grain size of 95Pb/5Sn solder reflowed in the furnace is about $5\mu\textrm{m}$, but the grain size of RTA treated solder is too small to be observed. The microstructure in 63Sn/37Pb solder bump shows the segregation of Pb phase in the Sn rich matrix regardless of reflowing method. The 63Sn/37Pb solder bump formed by RTA process shows more uniform microstructure. These result are related to the heat dissipation in the solder bump.

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Fabrication of MILC poly-Si TFT using scanning-RTA and light absorption layer

  • Pyo, Yu-Jin;Kim, Min-Sun;Kim, Young-Soo;Song, Nam-Kyu;Joo, Seung-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.307-309
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    • 2005
  • We investigated light absorption layer effect on metal-induced lateral crystallization (MILC) growth rate and MILC thin films transistors (TFTs). As annealing method, we used scanning-rapid thermal annealing (RTA). MILC growth rate which was crystallized by light absorption layer and using scanning-RTA was 3 times than normal MILC which was without light absorption layer growth rate. Also we compared MILC TFTs characteristics which were combined to light absorption layer with conventional MILC TFTs. After scanning-RTA process, MILC-TFTs which were with light absorption layer were superior to conventional MILC-TFTs. With this new MILC-TFTs structure, we could reduced crystallization time and obtain good electrical properties.

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프린팅 히터용 코발트실리사이드 박막의 형성과 특성연구 (Preparation and Characterization of Cobalt Silicide Films for Printing Heater)

  • 장호정;노영규
    • 마이크로전자및패키징학회지
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    • 제9권2호
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    • pp.49-54
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    • 2002
  • Poly-Si/$SiO_2$/Si 하부기판구조 위에 Co 금속을 E-beam evaporation 방식으로 증착하고 급속 열처리 방식을 통해 프린터 heater용 코발트실리사이드 박막을 형성하였다. 급속열처리 온도 (600~$900^{\circ}C$)와 시간 (20~40초)을 변수로 하여 코발트실리사이드의 결정상 및 성분분포를 조사하였다. 또한 제작된 박막의 면저항과 결정특성 분석을 통해 고온에서의 열적 안정성을 확인하였다. $800^{\circ}C$ 온도에서 20초간 급속열처리한 경우 면저항이 약 $0.8 \Omega /\Box$ 인 안정한 $CoSi_2$ 결정상의 코발트실리사이드 박막이 얻어졌다. 그러나 $700^{\circ}C$ 이하의 온도에서는 결정상의 변화에 따라 코발트실리사이드 박막의 면저항이 급격히 증가하였다. 코발트실리사이드 박막의 온도저항계수는 약 $0.0014/^{\circ}C$ 값을 나타내었으며, 프린터 발열체로 응용가능함을 확인 할 수 있었다.

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Effect of Annealing on the Dielectric Properties and Microstructures of Thin Tantalum Oxide Film Deposited with RF Reactive Sputtering

  • 이경수;남기수;천창환;김근홍
    • ETRI Journal
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    • 제13권2호
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    • pp.21-27
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    • 1991
  • Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

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Large-Area Synthesis of High-Quality Graphene Films with Controllable Thickness by Rapid Thermal Annealing

  • Chu, Jae Hwan;Kwak, Jinsung;Kwon, Tae-Yang;Park, Soon-Dong;Go, Heungseok;Kim, Sung Youb;Park, Kibog;Kang, Seoktae;Kwon, Soon-Yong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.130.2-130.2
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    • 2013
  • Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

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Se Incorporation in VTD-SnS by RTA and Its Influence on Performance of Thin Film Solar Cells

  • Yadav, Rahul Kumar;Kim, Yong Tae;Pawar, Pravin S.;Heo, Jaeyeong
    • Current Photovoltaic Research
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    • 제10권2호
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    • pp.33-38
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    • 2022
  • Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (JSC). In this study, we have demonstrated a path to overcome deficiency in JSC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (TRTA), also it is observed that film structure changes from cube-like to plate-like structure with TRTA. The maximum JSC of 23.1 mA cm-2 was observed for 400℃ with an open-circuit voltage (VOC) of 0.140 V for the same temperature. The highest performance of 2.21% with JSC of 18.6 mA cm-2, VOC of 0.290 V, and fill factor (FF) of 40.9% is observed for a TRTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in JSC is approximately 80% while a loss in VOC of about 20% has been observed.

Ni/AlN/4H-SiC 구조로 제작된 소자의 후열처리 효과 (The Effect of Post-deposition Annealing on the Properties of Ni/AlN/4H-SiC Structures)

  • 민성지;구상모
    • 전기전자학회논문지
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    • 제24권2호
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    • pp.604-609
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    • 2020
  • 본 연구에서는 RF 스퍼터를 이용하여 SiC 기판위에 AlN막을 증착하고 급속 열처리 (RTA) 공정의 온도에 따른 AlN/4H-SiC 구조의 전기적, 재료적 특성에 대한 영향을 분석하였다. 400도에서 RTA 공정을 진행한 Ni/AlN/4H-SiC SBD 소자의 온/오프 비율은 RTA 공정 전 그리고 600도에서 RTA 공정을 한 소자에 비해 약 10배정도 높은 값을 가졌다. 또한 오제이 전자현미경을 통한 원자성분 분석을 통해 증착한 AlN 층내의 존재하는 산소의 양이 후열 처리 조건에 따라 변화함을 확인하였고 소자의 온/오프 비율 그리고 온-저항 등 소자의 성능에 영향을 주는 것을 분석하였다. 추가적으로, 제작한 소자의 노출된 음향 주파수에 따른 전기적 특성변화를 분석하였다.

ECR plasma로 전처리된 Cu seed층 위에 전해도금 된 Cu 막에 대한 Annealing의 효과 (Effects of Post-deposition Annealing on the Copper Films Electrodeposited on the ECR Plasma Cleaned Copper Seed Layer)

  • 이한승;권덕렬;박현아;이종무
    • 한국재료학회지
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    • 제13권3호
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    • pp.174-179
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    • 2003
  • Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.