• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.232-235
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• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• 접착 및 계면
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• 제13권1호
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• pp.45-50
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• 2012

폴리케톤(polyketone, PK) 섬유는 고무의 강화재로 사용하기 위해서 최근 개발되고 있는 소재이다. 섬유의 고무와의 접착성을 향상시키기 위하여 플라즈마로 표면을 개질하였다. 산소 플라즈마 처리에 의한 섬유표면의 물리적 형태변화를 관찰하기 위하여 주사전자현미경과 원자현미경을 이용하여 관찰하였다. 섬유표면의 화학적 조성변화를 XPS (X-ray photoelectron spectroscopy)를 이용하여 알아보았다. 최종적으로 이러한 변화가 PK 섬유와 고무와의 계면접착력에 어떠한 영향을 미치는지를 microdroplet debonding 시험을 통해 분석하였다. 플라즈마 처리에 의하여 섬유표면에 산소함유기들이 증가하는 결과를 보였으며, 처리시간과 처리전력이 증가함에 따라 에칭에 의한 표면조도(RMS roughness)가 증가하였다. 그러나 장시간의 플라즈마 처리조건에서는 표면에 degradation이 발생하여 오히려 표면조도가 감소하는 결과를 보였다. PK 섬유와 고무와의 계면전단강도는 처리시간 60 s의 80 W, 처리전력 60 W의 180 s에서 처리한 경우에 최대 계면전단강도를 나타내었다. 그러나 그 이상으로 증가하면 degradation이 발생하면서 계면전단강도가 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• 전기학회논문지
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• 제58권6호
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• 한국초전도ㆍ저온공학회논문지
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• 제13권4호
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• pp.18-21
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• 2011

In this work, the yttrium oxide($Y_2O_3$) thin films as the buffer layer were prepared by the simple solution coating and reel-to-reel process on an unpolished metal tape substrate. The $Y_2O_3$ thin films were successfully synthesized by the hydrolysis of yttrium acetate. We have studied the improvement of surface roughness with the concentration of solution(0.1 M, 0.4 M, M) and the number of coatings. The planarization by solution coating process is simple in comparison with the existing polishing process, and it is eco-friendly, and has the benefits of low cost process. The thickness of $Y_2O_3$ films was increased with the $Y_2O_3$ concentration in the solution, and the surface became smoother with the number of coating cycles. Using this process, we have achieved 1.2 nm RMS roughness from a starting roughness of over 31 nm on 25 ${\mu}m^2$ area.

• 한국진공학회지
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• 제22권6호
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• pp.313-320
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• 2013

실리콘(Silicon, Si) 기판과 $Al_{0.3}Ga_{0.7}As$/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 $AlAs_xSb_{1-x}$ 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. $AlAs_xSb_{1-x}$ 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 $10{\times}10{\mu}m$ 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. $AlAs_xSb_{1-x}$/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs이 형성되었다. $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.213-217
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• 2005

ITO(indium tin oxide)/Glass 기판위에 정공 수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]과 발광층으로 MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]의 고분자를 사용하여 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. 고분자 유기 발광다이오드 제작시 MEH-PPV의 농도$(0.1\;wt\%\~0.9\;wt\%)$가 발광층 표면 거칠기와 박막층판의 마찰계수(friction coefficient)에 미치는 영향을 조사하였다. MEH-PPV의 농도를 $0.1\;wt\%$에서 $0.9\;wt\%$로 증가함에 따라 발광층의 RMS 값은 1.72 nm 에서 1.00 nm로 감소하여 거칠기가 개선되는 경향을 보여 주었다. 또한 발광층 박막의 마찰계수는 0.048에서 0.035로 감소하여 박막의 접합상태가 나빠지는 현상을 나타내었다. $0.5\;wt\%$의 농도를 갖는 PLED 다이오드에서 최대 휘도인 $409\;cd/m^2$ 값을 얻었다.

• 한국기계가공학회지
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• 제18권1호
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• pp.9-15
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• 2019

This study focused on the application of ELID mirror-surface grinding technology to the manufacture of off-axis asymmetric large-area reflecting mirrors made of BK7 glass. The size of the parts, such as asymmetric large-area mirrors or lens, made form-accuracy or roughness especially hard to measure after machining because of the measuring range limit of measurement devices. In this study, the ELID grinding system has been set up for mirror-surface machining experiments manufacturing off-axis asymmetric lenses. A measuring method using a reference workpiece has been suggested to measure the form-accuracy and roughness. According to the experimental results, even when using only a reference workpiece, it is confirmed that the surface roughness was 8 nmRa and form-accuracy was 80 nmRMS, with a best fit asymmetric radius when using a grinding wheel of #8,000. It is found that the accuracy of large-area parts could be estimated by the proposed process.

• 한국표면공학회지
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• 제37권3호
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.