• Journal of the Institute of Electronics Engineers of Korea CI
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• v.47 no.2
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• pp.48-53
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• 2010

RC(Remote Control) is a technology that can efficiently control and transfer a variety of user commands to CEs. However, the existing RCs have been required various additional features such as communication between CEs, extension of communication range, low power-consumption and bi-directional communication according to the advent of new types of CE devices and its enhanced performance. Even though RC controller has many customers' requests, it is not a simple solution because most legacies work on IR-based RC. In this paper, we propose RF4CE-based Universal Remote Control Framework using Smartphone in order to solve the many constraints of IR legacies. The proposed R-URC system is designed by RF4CE platform which is a kind of de-facto standard for CE remote control communication. From the verification scenarios using various CEs and smart phone, we can see that the proposed R-URC shows the good practical usage in terms of contents sharing and smart CE control.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.6B
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• pp.970-976
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• 2010

Platform convergence originated from the convergence of broadcast and telecommunication is making rapid progress including IT and not-IT fields in order to provide a variety of converged services, S/W eco-system construction, and so on. With the advent of convergence environment, IEEE 802.15.4-based RF4CE technology is rising because of creating momentum for the market using converged connectivity between home and office devices as well as all around located devices. In this paper, we present enhanced RF4CE key seed distribution approach in order to provide efficient connection and control between devices. The proposed approach consists of device mutual authentication, initial vector assignment, and two-phase key seed distribution. Moreover, we make a development real RF4CE test board and its key agreement simulator to verify the proposed approach.

• Journal of IKEEE
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• v.15 no.4
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• pp.287-292
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• 2011

The RF4Control stack is used with microcontrollers and IEEE(R) 802.15.4 transceivers. This paper explains the setup and power consumption measurements for the transceiver based remote controller and target node. It is assumed the reader of this paper has knowledge about RF4CE. The current consumption measurements are made using the ZigBee Platform included with the RF4Control stack. he current consumption measurements are presented, and battery life time is calculated for an remote controller. Note that the results presented in this paper are intended as a guideline only. A variety of factors will influence the battery life calculation and final measurements and calculations should be performed on ZigBee RF4CE Certified Platform.

• Journal of IKEEE
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• v.22 no.2
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• pp.476-479
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• 2018

This paper proposes a method for reducing the amount of current consumption by the transceiver based remote control and the ZigBee RF4CE network layer step. We have studied how to improve power efficiency at short transition time through duty rate management. Also, comparing the measured current consumption before and after the improvement, we confirmed the correlation between the data transmission speed improvement and the current reduction.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.1014-1020
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• 2000

RF 마크네트론 스퍼터법으로 Ce의 일부를 희토류 원소로 치환한 Ce$_{1-x}$RE$_{x}$O$_{2-y}$(0.1$\leq$x$\leq$0.4, RE=Y, Nd) 박막을 Si(111), $Al_2$O$_3$(1012) 기판 위에 1450~1$600^{\circ}C$로 소결한 target을 이용하여 성장시켰다. Ce$_{1-x}$RE$_{x}$O$_{2-y}$ 박막의 성장시 기판온도 및 증착시간 등을 변화시켜 성장시켰으며, 성장된 박막의 특성분석은 XRD, SEM, TEM으로 행하였다. 증착된 박막의 방향성 및 결정성장 거동은 증착온도 및 시간에 따라 차이를 보였다. Si(111) 기판 위에 증착된 Ce$_{1-x}$Y$_{x}$O$_{2-y}$(x=0.3) 박막의 경우, 80$0^{\circ}C$에 비해 7$50^{\circ}C$에서 증착 시간에 따른 (111) 우선배향성의 정도가 나은 결과를 보였으며, $Al_2$O$_3$(1012) 기판 위에 증착한 Ce$_{1-x}$Nd$_{x}$O$_{2-y}$(x=0.3) 박막 또는 (111) 우선배향성을 나타내었다.을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.27-31
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• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• Progress in Superconductivity
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• v.7 no.2
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• pp.120-129
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• 2006

We comparatively studied the epitaxial growth conditions of $CeO_2$ and $Y_2O_3$ thin buffers on textured Ni tapes using rf magnetron sputtering and investigated the feasibility of getting a single mixture layer or sequential layers of $CeO_2$ and $Y_2O_3$ for more simplified buffer architecture. All the buffer layers were first deposited using the reducing gas of $Ar/4%H_2$ and subsequently the reactive gas mixture of Ar and $O_2$, The crystalline quality and biaxial alignment of the films were investigated using X-ray diffraction techniques (${\Theta}-2{\Theta},\;{\phi}\;and\;{\omega}\;scans$, pole figures). The $CeO_2$ single layer exhibited well developed (200) epitaxial growth at the condition of $10%\;O_2$ below an $450^{\circ}C$, but the epitaxial property was decreased with increasing the layer thickness. $Y_2O_3$ seldom showed optimum condition for (400) epitaxial growth. The sequential architecture of $CeO_2/Y_2O_3/CeO_2$ having good epitaxial property was achieved by sputtering at a temperature of $700^{\circ}C$ on the initial $CeO_2$ bottom layer sputtered at $400^{\circ}C$. Cracking of the sputtered buffer layers was seldom observed except the double layer structure of $CeO_2/Y_2O_3$.

• Journal of Advanced Navigation Technology
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• v.16 no.5
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• pp.766-772
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• 2012

In the present study, wideband microstrip monopole slot antennas which can be applied to the RF4CE Zigbee remote controller are designed. First I-shaped monopole slot antenna which has ${\lambda}g/4$ length at 2.45GHz is designed. In particular, a conducting via is used to connect the microstrip feed line and the ground plane surrounded with the etched slot for the bandwidth improvement. In order to reduce the antenna size, it is changed into L-shaped and T-shaped monopole slot antennas for which improve results of antenna performance are observed. In case of T-shaped monopole slot antenna, impedance bandwidth(VSWR<2) is about 3.32GHz, and also its radiation efficiency and gain is more than 90% and 2.1dBi respectively at whole operating frequency range. In particular, all of proposed monopole slot antennas have the end-fire radiations which has a maximum radiation power toward direction of open ends of monopole slots.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.236-237
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• 2005

The structural properties of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films with post-annealing temperature were investigated. $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with optimum deposition condition. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was post-annealed at 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$ in furnace,respectively. Increasing the post-annealing temperature, the grain size, density and peak intensity of (117) and c-axis orientation were increased. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films that annealed at 750$^{\circ}C$ exhibited well crystallized phase and had no vacancy and grain was uniform. but there are some secondary phases observed. At this time, the average thickness of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was 2000 ${\AA}$.