• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.823-828
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• 2011

We have systematically designed and experimentally demonstrated the opto-electrical predistortion optical transmitter using microwave circuit modelling for reducing the nonlinearity of the distributed-feedback laser diode (DFD-LD). The DFB-LD is analyzed using microwave circuits model based on rate equations. Through the system-level simulation for predistortion method, the optimized characteristics of the RF components in the system are confirmed. The simulated and experimental results show the reduced distortion products. These results are analyzed as the evaluation parameters for the miniaturization and optimization of the opto-electrical predistortion method in radio-over-fiber systems.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.303-308
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• 2008

Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.110-111
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• 2014

RGB laser 를 이용하여 rf-magnetron sputtering 법으로 합성한 a-IGZO 박막의 photoresponse 를 관찰하였다. Air 분위기에서 red 파장을 조사 할 경우 비교적 slow recovery 특성을 보였으며, green 과 blue 파장을 조사 할 경우 red 보다 fast recovery 특성을 나타내었다. 그러나 진공에서 측정할 경우, red 파장에서는 recovery 가 빨라졌으며, green 과 blue 파장의 경우 recovery 가 매우 느려짐을 확인하였다. 이는 passivation 을 하지 않은 소자의 oxygen gas 의 흡/탈착 때문으로 예상할 수 있었으며, red 파장이 gas 탈착에 기여하는 정도가 매우 작고, green 과 blue 파장이 gas 탈착에 기여하는 정도가 매우 크기 때문인 것으로 생각할 수 있었다. 온도를 증가시킬 경우, 모든 경우에서 recovery 가 빠르게 나타났는데 이는 흡/탈착에 필요한 barrier 및 $V_o{^{2+}}$에서 Vo 로 돌아오기 위한 barrier 를 쉽게 넘어갈 수 있기 때문으로 이해 할 수 있었다. 이러한 결과를 stretched exponential equation 을 이용하여 해석하였으며 수치화 하였다.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2163-2165
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• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

• Current Optics and Photonics
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• v.5 no.4
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• pp.384-390
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• 2021

This paper presents a wide-range tunable wavelength-locking technology based on optoelectronic oscillation (OEO) loops for optical fiber sensors and microwave photonics applications, explains the theoretical fundamentals of the design, and demonstrates a method for locking the relative wavelength differences between a leader semiconductor laser and its follower lasers. The input of the OEO loop in the proposed scheme (the relative wavelength difference) determines the radio-frequency (RF) signal frequency of the oscillation output, which is quantized into an injection current signal for feedback to control the wavelength drift of follower lasers so that they follow the wavelength change of the leader laser. The results from a 10-hour continuous experiment in a field environment show that the wavelength-locking accuracy reached ±0.38 GHz with an Allan deviation of 6.1 pm over 2 hours, and the wavelength jitter between the leader and follower lasers was suppressed within 0.01 nm, even though the test equipment was not isolated from vibrations and the temperature was not controlled. Moreover, the tunable range of wavelength locking was maintained from 10 to 17 nm for nonideal electrical devices with limited bandwidth.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.110.2-110.2
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• 2016

4세대 방사광가속기는 0.1nm급 X-선 자유전자레이저(X-ray Free Electron Laser : XFEL) 광원을 빔라인 사용자들에게 제공하기 위하여 2011년 건설을 시작하였고, 2015년부터 장치를 설치하기 시작했으며 현재 건설 완료단계에 이르러 있다. 이 장치에서 진공시스템은 10-11 mbar의 초고진공이 요구되는 전자빔 발생장치인 RF Gun을 포함하는 입사장치구간(Injector)과 전체길이 800 m에 이르는 전자빔을 가속시키는 선형가속기구간(Linac) 그리고 결맞음 방사광을 발생시키는 언듈레이터구간으로 나눌 수 있다. 본 논문에서는 각 구간별 진공시스템에 대한 건설 현황에 대하여 보고하고자 한다.

• Vacuum Magazine
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• v.4 no.1
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• pp.12-15
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• 2017

The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) is a 0.1 nm hard X-ray FEL which aims at providing photon flux higher than $1{\times}10^{12}$ photons/pulse using a 10-GeV electron linac. The vacuum system of the machine consists of an injector section including an S-band photocathode RF gun, 10-GeV electron linac section based on S-band normal conducting accelerating structures and a 150-m long out-vacuum undulator system. We introduce the present status of PAL-XFEL vacuum systems.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.44-45
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• 2000

GHz 급의 아주 높은 반복율을 가지면서, 피코초 단위의 펄스 열을 발진시키는 레이저를 만들기 위해 능동형 모드록킹 방법을 이용하였다. 이 방법은 공진기안에 광 변조기를 삽입하고, RF 신호를 가하여 시간적으로 공진기내에서의 손실을 변화시키는 방법이다.$^{(1)}$ 공진기 길이를 충분히 길게 하면서도 고 반복율을 가지는 레이저를 만들기 위해 조화 모드록킹 방법을 사용했는데, 이는 레이저 펄스의 반복율을 공진기 길이에 의한 기본 반복율의 정수배가 되도록 하는 방법이다.$^{(2),(3)}$ 3차 조화 모드록킹 방법을 이용한 Nd:YLF 레이저 시스템을 그림 1에서 나타내었다. (중략)

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.19-19
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• 2007

Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).