• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.68-71
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• 2021

In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.13-30
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• 2020

Radio frequency (RF) energy harvesting technology have become a reliable and promising alternative to extend the lifetime of power-constrained wireless networks by eliminating the need for batteries. This emerging technology enables the low-power wireless devices to be self-sustaining and eco-friendly by scavenging RF energy from ambient environment or dedicated energy sources. These attributes make RF energy harvesting technology feasible and attractive to an extended range of applications. However, despite being the most reliable energy harvesting technology, there are several challenges (especially power conversion efficiency, output DC voltage and sensitivity) poised for the implementation of RF energy harvesting systems. In this article, a detailed literature on RF energy harvesting technology has been surveyed to provide guidance for RF energy harvesters design. Since signal strength of the received RF power is limited and weak, high efficiency state-of-the-art RF energy harvesters are required to design for providing sufficient DC supply voltage to wireless networks. Therefore, various designs and their trade-offs with comprehensive analysis for RF energy harvesters have been discussed. This paper can serve as a good reference for the researchers to catch new research topics in the field of RF energy harvesting.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2441-2446
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• 2018

This paper presents a radio frequency-to-direct current (RF-to-DC) converter for special RF power harvesting application at 915 MHz. The major featured components of the proposed RF-to-DC converter is the combination of a cross-coupled rectifier and an active diode: first, the cross-coupled rectifier boosts the input voltage to desired level, and an active diode blocks the reverse current, respectively. A prototype was implemented using $0.18{\mu}m$ CMOS technology, and the performance was proven from the fact that the targeted RF harvesting system's full-operation with higher power efficiency; even if the system's input power gets lower (e.g., from nominal 0 to min. -12 dBm), the proposed RF-to-DC converter constantly provides 1.47 V, which is exactly the voltage level to drive follow up system components like DC-to-DC converter and so on. And, maximum power conversion efficiency is 82 % calculated from the 0 dBm input power, 2.3 mA load current.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.25-30
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• 2014

This paper discusses the design of a high frequency Greinacher voltage multiplier as rectifier; it has a greater conversion efficiency and higher output direct current (DC) voltage at high power compared to a simple halfwave rectifier. Multiple diodes in the Greinacher voltage multiplier with distributed circuits consume excited power to the rectifier equally, thereby increasing the overall power capacity of the rectifier system. The proposed rectifiers are a Greinacher voltage doubler and a Greinacher voltage quadrupler, which consist of only diodes and distributed circuits for high frequency applications. For each rectifier, the RF-to-DC conversion efficiency and output DC voltage for each input power and load resistance are analyzed for the maximum conversion efficiency. The input power with maximum conversion efficiency of the designed Greinacher voltage doubler and quadrupler is 3 and 7 dB higher, respectively;than that of the halfwave rectifier.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.189-192
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• 1998

In this paper, we analyzed Microwave-DC conversion efficiency for the rectennas and it's position change. Rectenna consist of a two major parts, receiveing antenna and rectifying circuits. We made two types of 2.45C rectennas which the dipole and the patch antenna. Rectifying circuit is a GaAs-schottky diode with a large forward current and reverse breakdown voltage. The results of RF-DC conversion efficiency for two rectennas, patch type has 75.6% efficiency with 400$\Omega$ load resistor and dipole type has 69.75% efficiency with 360$\Omega$ load resistor. When the rectennas has optimal load resistor, Rectenna efficiency shows of $\pm10%$ at $70^{\circ}$~$110^{\circ}$ position.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.747-756
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• 1999

In this paper, we analyzed microwave-DC conversion efficiency for the dual-polarization rectenna and antenna position changing. And then we analyzed and applied Square-Loop FSS structure for reducing the diode harmonic components as a rectifying circuit. The results of microwave-DC conversion efficiency for the each of designed dual-polarization rectenna has 69.1% with $360\Omega$ (dipole type) and 75.4% with $340\Omega$ (patch type) optimum load resistor. When the each of dual-polarization rectenna has a optimal load resistor, it's conversion efficiency shows of $\pm$20% in dipole type and $\pm$5% in patch type at $0~180^{\circ}$position. When applied Square-Loop FSS structure for Rectenna, Insertion loss was under 1 dB as the passband and over 20 dB as the stopband. The microwave -DC conversion efficiency was represented good properties of $\pm$2% variation.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.4
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• pp.86-96
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• 2008

In this paper, a new broadband rectenna is presented for the wireless transmission of microwave power. The new broadband rectenna element is based on a new printed monopole broadband antenna with size reduction using surface current distribution and a new broadband stub bandpass filter with suppression of second harmonics. A RF-to-DC conversion efficiency of 80% using a 270 ohm load resistor is obtain at 2.45 GHz. Also, a conversion efficiency of above 50 % is maintained from 1.8 GHz to 2.8 GHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.182-187
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• 2009

In this paper, the power management module of wireless sensor node is designed and fabricated utilizing RF energy from reader antenna of commercial RFID system, which is mainly categorized in the energy harvesting. For this, the rectenna and the high efficient boost converter is designed to get the DC power from RF power for the charging the battery. When the RF power from RFID reader antenna is 1.2[W], the DC power of 3.1[mW] at the distance of 1[m] and 1[mW] at 5.5[m] are obtained. Considering the connection to the battery, the boost converter for enhancing the conversion efficiency is designed. The conversion efficiency at the distance of 4[m] is 79.3[%] and the harvested power is 1.36[mW] which is actually used for the charging the battery. This value is available in the wireless sensor networking.

• 한국ITS학회:학술대회논문집
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• 2008.11a
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• pp.176-180
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• 2008

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.257-261
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• 2011

A highly efficient 2.4 GHz rectenna is designed using a harmonic rejection bandpass filter. The rectenna is printed on Rogers Duroid 5880 substrate with ${\varepsilon}_r$=2.2 and a thickness of 1.6 mm. The rectenna consists of a microstrip antenna and high order harmonic rejection bandpass filter, microstrip lowpass filter, and Schottky barrier diode (HSMS2820). The use of a $2^{nd}$ and $3^{rd}$ harmonic rejection microstrip bandpass filter in the rectenna results in high conversion efficiency. The proposed rectenna achieves a RF to DC conversion efficiency of 72.17 % when the received RF power is 63.09 mW.