• 제목/요약/키워드: RF thermal plasma

검색결과 88건 처리시간 0.026초

Ga2O3박막 상에서의 RF 플라즈마 화학기상증착법의 메테인 분율 조절에 의한 탄소층의 다양한 형상 제어 연구 (Various Shape of Carbon Layer on Ga2O3 Thin Film by Controlling Methane Fraction in Radio Frequency Plasma Chemical Vapor Deposition)

  • 서지연;신윤지;정성민;김태규;배시영
    • 열처리공학회지
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    • 제35권2호
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    • pp.51-56
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    • 2022
  • In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga2O3 templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

CVD 반응기 내에서의 유동장에 대한 샤워헤드 지름의 영향에 대한 수치적 연구 (EFFECTS OF SHOWERHEAD DIAMETERS ON THE FLOWFIELDS IN A RF-PECVD REACTOR)

  • 김유재;김윤제
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.1475-1480
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    • 2004
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

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Thermal and Stress Analysis of The Faraday Shield in KSTAR ICH System

  • Yoon, B.J.;Han, J.M.;Jeong, S.H.;Yoon, J.S.;Hong, B.G.
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 1998년도 춘계학술발표회논문집(2)
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    • pp.935-940
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    • 1998
  • The Korea Superconducting Tokamak Research (KSTAR) tokamak will have 6 MW of radio-frequency (rf) heating in the ion cyclotron range of frequencies (ICRF). The response of the antenna to the heat loads is analyzed and the resulting stresses in the Faraday shield during the normal operation is calculated. Various heat loading conditions including in the analyzes are the heat loads from the plasma, the ripple-trapped beam particles and the rf loss.

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고도처리를 위한 금속티타늄 고정화광촉매기술평가 (Evaluation of Photocatalysis-Fixed Using Titanium for Advanced Wastewater Treatment)

  • 장준원;민지은;박재우
    • 한국방재학회:학술대회논문집
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    • 한국방재학회 2008년도 정기총회 및 학술발표대회
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    • pp.815-818
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    • 2008
  • Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition(PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

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침형 상압 마이크로 플라즈마 장치에서 발생하는 전기장이 세포 사멸에 미치는 효과 (The effect of RF electric fields from an atmospheric micro-plasma needle device on the death of cells)

  • 윤현진;손채화;김규천;이해준
    • 전기학회논문지
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    • 제57권12호
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    • pp.2249-2254
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    • 2008
  • A non-thermal micron size plasma needle is applicable for medical treatment because it includes radicals, charged particles, ultraviolet emission, and strong electric fields. The electric fields around the plasma needle device driven by a radio frequency wave are investigated in order to calculate the power delivered to the cell. A commercial multi-physics code, CFD-ACE, was utilized for the calculation of electric fields for the optimization of the needle structure. The electric field and energy absorption profiles are presented with the variation of the device structure and the distance between the needle and tissues. The living tissues effectively absorb the radio frequency power from the plasma needle device with the covered pyrex structure.

A Novel Solid Phase Epitaxy Emitter for Silicon Solar Cells

  • 김현호;박성은;김영도;지광선;안세원;이헌민;이해석;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.480.1-480.1
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    • 2014
  • In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

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고출력 ICP (RF) 열플라즈마 시스템을 이용한 다성분계 나노 복합체 합성

  • 이미연;김정수;최채홍;김민호;서준호;홍봉근
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.415-415
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    • 2012
  • ICP (RF) 열 플라즈마 분말 합성법은 초고온 열플라즈마(~10,000 K) 속으로 원료물질을 투입한 뒤, 용융, 기화 및 재합성의 과정을 거쳐 초미분(<1 ${\mu}s$)을 합성하는 방법으로 고출력 시스템의 경우 고온/고 엔탈피 열 유동을 통한 고융점 및 저융점 복합물질의 동시 기화에 의한 물질 조성이 제어된 나노 복합체의 대량 합성이 가능할 것으로 기대되고 있다. 본 연구에서는 전북대학교 고온플라즈마 응용연구센터의 60&200 kW의 고출력 ICP (RF) 열 플라즈마 시스템을 이용하여 LTO (Lithium Titanium Oxide)와 IZTO (Indium Zinc Tin Oxide), Barium Borosilicate Glass (K2O-BaO-B2O3-SiO2)의 다성분계 나노 복합체를 합성하였으며, FE-SEM, TEM, XRD, ICP-OES를 이용하여 그 특성을 분석하였다.

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Nano-Powder 제조를 위한 RF Thermal Plasma Torch System 개발 및 Nano-Si 특성 연구

  • 송석균;손병구;김병훈;이문원;신명선;최선용;김성인
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.179-179
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    • 2012
  • 국내에는 나노 분말 제조를 위한 RF 열플라즈마 시스템 제조 기술이 확보되어 있지 않고, 또한 나노 파우더 제조를 위한 공정 기술 역시 외국 업체에 전적으로 의존하고 있다. 본 연구에서는 나노 분말 제조를 위한 RF 열 플라즈마 토치 시스템 개발과 고품질의 나노 파우더 합성 공정 기술을 확립하여 필요 기관에 제공하는데 있다. 80 kW RF Plasma torch system의 설계 및 제작을 위해 플라즈마 Simulator인 CFD-ACE+를 이용하여 플라즈마 토치 및 반응로 내의 온도 분포, 유체 유동, 열전달 등의 해석을 통해 플라즈마 토치 및 반응로의 반경 및 길이, 구조의 설계 값을 도출하여 반응로를 설계하여 RF 파워, RF 플라즈마 토치(Torch), 반응기(Reactor), 사이클론(Cyclone), 포집부(Collector), 열교환기 및 진공배기 시스템으로 구성하였다. Si 나노 소재의 경우, 이차전지 음극재에 적용이 가능한 대표적인 소재로서 높음 비용량과 충/방전시 부피팽창을 감소시킬 수 있어 이차전지의 고용량 구현을 위해서는 가장 중요한 소재중 하나로 많은 관심 재료로 평가 받고 있다. 따라서 본 연구에서는 상용화된 Si 원료 powder를 사용하여 고상 분체 공급 장치를 통하여 고온의 플라즈마를 통과시켜 기상화 및 결정화과정을 통해 Si 나노분말을 제조하였다. 공정 변수로서 공정압력 및 플라즈마 power, Gas의 변화량에 따른 나노 분말의 제조 특성에 대한 실험을 진행한 후 제조된 나노 분말을 비표면적측정(BET) 및 SEM 측정 결과 분석을 통하여 시스템 특성을 파악하였으며 제조된 Si 나노 파우더는 이차전지 음극재로서 770 mAh/g의 용량과 93%@50 cycle 수준의 유지율을 나타내었다.

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Synthesis of Boron Nitride Nanotubes via inductively Coupled thermal Plasma process Catalyzed by Solid-state ammonium Chloride

  • Chang, Mi Se;Nam, Young Gyun;Yang, Sangsun;Kim, Kyung Tae;Yu, Ji Hun;Kim, Yong-Jin;Jeong, Jae Won
    • 한국분말재료학회지
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    • 제25권2호
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    • pp.120-125
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    • 2018
  • Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.

RF 마그네트론 스퍼터법에 의한 ZnO:Al 투명전도막 특성에 미치는 방전전력의 영향 (Effect of discharge power on the electrical properties of ZnO:Al transparent conducting films by RF magnetron sputtering)

  • 이성욱;김병섭;이수호;임동건;박민우;이세종;곽동주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.939-942
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    • 2004
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

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