• 한국초전도학회:학술대회논문집
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• v.12
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• pp.42-42
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• 2002

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1414-1415
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• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.688-692
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• 2004

In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.22-26
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• 2019

With an increasing potential to realize quantum computer, it has recently been an important issue to extend the capabilities of RF cavities to maintain longer coherent quantum system. Using superconductors instead of normal metals allows the quantum system to have a substantially enhanced quality factor. In this paper, surface impedances of superconducting cavities are calculated by the Mattis-Bardeen theory with Python & MATLAB programs. With a simulation of electromagnetic field distribution, the sensitivity to dielectric and surface losses of the superconducting cavities are determined. Then calculations of the resonance frequency and quality factor of three-dimensional superconducting resonators made of Al or Nb are discussed.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.24-25
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• 2006

In this paper, ZnO thin films were prepared on p-Si(100) by RF magnetron sputtering. Before the depostion, the substrates were pre-heated to 500, 400, 300, $200^{\circ}C$ or not. During the deposition, the substrates were cooled down naturally or kept and then the films were investigated by XRD(X-ray diffraction) and SEM (scanning micro scope). It is showed the most outstanding result that the film was prepared on the substrate were cooled from $400^{\circ}C$. When the substrate was cooled from a certain temperature during deposition, it could be improve the c-axis orientation and useful for application of SAW(surface acoustic wave) filter and FBAR(film bulk acoustic wave resonator) device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.965-968
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• 2007

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.559-562
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• 2004

The $high-T_c$ Superconducting(HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna HTS $YBa_2Cu_3O_{7-x}$(YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50\Omega$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24 % in efficiency, and 14.6 dB in the return loss superior to the normal conducting counterpart.

• Journal of Biosystems Engineering
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• v.36 no.1
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• pp.23-32
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• 2011

In this work, the finite element method was used to investigate the shifts of resonance frequencies and quality factor of whispering-gallery-mode (WGM) for an opto-fluidic ring resonator (OFRR) biosensor. To describe the near-field radiation transfer, the time-domain Maxwell's equations were employed and solved by using the in-plane TE wave application mode of the COMSOL Multiphysics with RF module. The OFRR biosensor model under current study includes a glass capillary with a diameter of 100 mm and wall thickness of 3.0 mm. The resonance energy spectrum curves in the wavelength range from 1545 nm to 1560 nm were examined under different biosensing conditions. We mainly studied the sensitivity of resonance shifts affected by changes in the effective thickness of the sensor resonator ring with a 3.0 mm thick wall, as well as changes in the refractive index (RI) of the medium inside ring resonators with both 2.5 mm and 3.0 mm thick walls. In the bulk RI detection, a sensitivity of 23.1 nm/refractive index units (RIU) is achieved for a 2.5 mm thick ring. In small molecule detection, a sensitivity of 26.4 pm/nm is achieved with a maximum Q-factor of $6.3{\times}10^3$. These results compare favorably with those obtained by other researchers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.37-43
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• 2007

In this.paper, we introduce design and implementation results of the single balanced diode mixer for European point-to-point microwave radio in order to improve flatness performance. When a resonator such as RF filter is integrated with a mixer, impedance characteristic of 50 ohm is maintained only in RF band, not in LO band resulting deterioration of flatness performance because of LO power variation on the diode. In the paper, we suggest a design method of mixer integrated with image rejection filter and LO harmonic filter to have a better performance of flatness using embedding electrical length between filter and mixer's port. Frequency specification of fabricated mixer is $21.2{\sim}22.6\;GHz$ for RF, $19.32{\sim}20.72\;GHz$ for LO and 1.88 GHz+/-50 MHz for IF, respectively. Measured results show conversion loss of 8.5 dB, flatness of 2 dB, input PldB of 8 dBm, IIP3 of 15 dBm under LO power level of 10 dBm. Return losses of RF, LO and IF port are under -12 dB, -10 dB and -5 dB, respectively. Isolations of LO/RF and LO/IF are 20 dB and 50 dB, respectively.