• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.17-18
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• 2007

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2\;in\;BCl_3$/Ar plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 50.3 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements while chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data the suggestions on the ZnO etch mechanism were made.

• 한국염색가공학회지
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• 제16권5호
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• pp.28-34
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• 2004

The polarizing film application exploits the unique physicochemical properties between PVA(Poly vinyl alcohol) film and CTA(Cellulose triacetate) film. However, hardly any research was aimed at improving the adhesion characteristics of the CTA film by radio frequency(RF) plasma treatment at argon(Ar) gaseous state. In this report, we deal with surface treatment technology for protective CTA film developed specifically for high adhesion applications. After Ar plasma, surface of the films is analyzed by atomic force microscopy(AFM), roughness parameter and peel strength. Furthermore, the wetting properties of the CTA film were studied by contact angle analysis. Results obtained for CTA films treated with a glow discharge showed that this technique is sensitive to newly created physical functions. The roughness and peel strength value increased with an increase in treatment time for initial treatment, but showed decreasing trend for continuous treatment time. The result of contact angle measurement refer that the hydrophilicity of surface was increased. AFM studies indicated that no considerable change of surface morphology occurred up to 3 minutes of treatment time, but a considerable uneven of surface structure resulted from treating time after 5 minutes.

• 한국재료학회지
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• 제15권3호
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

• Korean Chemical Engineering Research
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• 제48권3호
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• pp.355-358
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• 2010

유도 결합 저온 플라즈마를 사용하여 폴리카보네이트 시료를 처리한 후 표면 특성 변화를 분석하였다. 표면 거칠기는 플라즈마 공정조건에 상관없이 표면 처리 후에 모두 증가하였으나, 산소 분위기에서 플라즈마 처리했을 때 가장 크게 증가하였다. 표면의 화학 결합 분석에서 플라즈마 처리 전 시료의 산소 함량이 산소 플라즈마 처리 후에 43% 증가하여 표면에 친수성 극성기의 형성이 촉진되었다. 공정 변수 중, 처리 시간에 따른 접촉각 변화는 산소 분위기에서 가장 낮은 접촉각 $9.17^{\circ}$을 얻을 수 있었고, 방전 전력의 증가는 같은 처리 시간에서 빠르게 접촉각의 감소를 보여 플라즈마 표면처리 시간을 단축시키는 효과를 주었다. 그러나 방전기체 유량의 증가에 대한 접촉각 변화에 대한 영향성이 크지 않았다.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Journal of Astronomy and Space Sciences
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• 제39권2호
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• pp.67-77
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• 2022

The elements that impact the dynamics and collaborations of waves and particles in the magnetosphere of planets have been considered here. Saturn's internal magnetosphere is determined by substantiated instabilities and discovered to be an exceptional zone of wave activity. Interchanged instability is found to be one of the responsible events in view of temperature anisotropy and energization processes of magnetospheric species. The generated active ions alongside electrons that constitute the populations of highly magnetized planets like Saturn's ring electron current are taken into consideration in the current framework. The previous and similar method of characteristics and the perturbed distribution function have been used to derive dispersion relation. In incorporating this investigation, the characteristics of electromagnetic ion cyclotron wave (EMIC) waves are determined by the composition of ions in plasmas through which the waves propagate. The effect of ring distribution illustrates non-monotonous description on growth rate (GR) depending upon plasma parameters picked out. Observations made by Cassini found appropriate for modern study, have been applied to the Kronian magnetosphere. Using Maxwellian ring distribution function of ions and detailed mathematical formulation, an expression for dispersion relation as well as GR and real frequency (RF) are evaluated. Analysis of plasma parameters shows that, proliferating EMIC waves are not developed much when propagation is parallelly aligned with magnetosphere as compared to waves propagating in oblique direction. GR for the oblique case, is influenced by temperature anisotropy as well as by alternating current (AC) frequency, whereas it is much affected only by AC frequency for parallel propagating waves.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.72-77
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• 2021

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R² value. It means that the etch rate distribution is explained by the ion energy flux.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.