• 제목/요약/키워드: RF plasma processing

검색결과 83건 처리시간 0.028초

Development of the DC-RF Hybrid Plasma Source

  • 김지훈;천세민;강인제;이헌주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.213-213
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    • 2011
  • DC arc plasmatron is powerful plasma source to apply etching and texturing processing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder, gas control system and vacuum system. To investigate a DC-RF hybrid plasma, we used a Langmuir probe, OES (Optical emission spectroscopy), infrared (IR) light camera. For RF matching, PSIM software was used to simulate a current of an impedance coil. The results of Langmuir probe measurements, we obtain a homogeneous plasma density and electron temperature those are about $1{\times}1010$ #/cm3 and 1~4 eV. The DC-RF hybrid plasma source is applied for plasma etching experimental, and we obtain an etching rate of 10 ${\mu}m$/min. through a 90 mm of reaction chamber diameter.

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APPLICATION OF RADIO-FREQUENCY (RF) THERMAL PLASMA TO FILM FORMATION

  • Terashima, Kazuo;Yoshida, Toyonobu
    • 한국표면공학회지
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    • 제29권5호
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    • pp.357-362
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    • 1996
  • Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

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전송선로를 이용한 플라즈마 전력 전달 연구 (Research on Transmission Line Design for Efficient RF Power Delivery to Plasma)

  • 박인용;이장재;김시준;이바다;김광기;염희중;유신재
    • 반도체디스플레이기술학회지
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    • 제15권2호
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    • pp.6-10
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    • 2016
  • In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

NEW APPLICATIONS OF R.F. PLASMA TO MATERIALS PROCESSING

  • Akashi, Kazuo;Ito, Shigru
    • 한국표면공학회지
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    • 제29권5호
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    • pp.371-378
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    • 1996
  • An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

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나일론 6 섬유의 발수성 향상을 위한 RF 플라스마 표면처리 (Plasma-Surface-Treatment of Nylon 6 Fiber for the Improvement of Water-Repellency by Low Pressure RF Plasma Discharge Processing)

  • 지영연;정탁;김상식
    • 폴리머
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    • 제31권1호
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    • pp.31-36
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    • 2007
  • 플라스마 표면처리는 전체적인 물성은 유지하고 표면의 특성만을 변화시킨다고 전해지고 있다. 이번 연구에서는 플라스마 처리에 의해 높은 발수성을 나타내는 나일론 6 섬유로의 개질을 시도하였다. 발수성을 나타내는 나일론 섬유는 가스 종류, 처리시간, 인가 파워를 변수로 하여 RF 진공 플라스마 시스템에서 처리되었다. 플라스마 처리된 섬유의 표면을 scanning electron microscopy(SEM)과 atomic force microscopy(AFM)으로 모폴로지 변화를 살펴보았으며, 기계적 특성과 고분자 고유의 특성을 인장강도와 Differential scanning calorimetry(DSC), thermo-gravimetric analysis (TGA)로 각각 분석하였다. 또한 나일론 섬유의 발수성 평가는 물방울 흡수시간으로 테스트를 실시하였다. 이러한 결과들은 플라스마 표면처리로 인해서 나일론 섬유의 발수성이 향상됨을 나타내었다.

유도 결합 플라즈마에서 플라즈마 변수와 전자 에너지 분포에 대한 극판 전력 인가의 영향 (Effect of RF Bias on Electron Energy Distributions and Plasma Parameters in Inductively Coupled Plasma)

  • 이효창;정진욱
    • 한국진공학회지
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    • 제21권3호
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    • pp.121-129
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    • 2012
  • 진공을 기초로 한 극판 전력이 인가된 유도 결합 플라즈마 소스에 관한 대부분의 연구는 자기 바이어스 효과에만 한정되어 있으며, 다양한 반도체 및 디스플레이 식각 공정에서 공정 결과와 소자 품질에 결정적인 역할을 하는 플라즈마 변수들(전자 온도, 플라즈마 밀도)과 극판 전력의 상관관계에 대한 연구는 거의 없는 실정이다. 본 연구에서는 극판 전력이 플라즈마 변수에 미치는 영향에 관한 내용을 다루고 있으며, 최근의 연구 결과에 대한 리뷰를 포함하고 있다. 플라즈마 밀도는 극판 전력 인가에 의하여 감소 또는 증가하였으며, Fluid global model에 의한 결과와 잘 일치하는 경향을 보였다. 전자 온도는 RF 바이어스에 의하여 증가하였으며, 전자 에너지 분포 측정을 통하여 전자 가열 메커니즘을 관찰하였다. 또한, 플라즈마 밀도의 공간 분포는 극판 전력에 의하여 더욱 균일해짐을 알 수 있었다. 이러한 극판 전력과 플라즈마 변수들의 상관관계와 전자 가열 메커니즘에 대한 연구는 방전 특성의 물리적 이해뿐만 아니라, 반도체 식각 공정에서 소자 품질 및 공정 개선을 위한 최적의 방전조건 도출과 외부 변수 제어에 큰 도움을 주리라 예상된다.

전북대학교 소재공정용 60kW 및 200kW ICP(RF) 플라즈마 발생 장치 구축 현황 (Chonbuk National University 60kW and 200kw ICP(RF) Plasma systems for Advance Material processing)

  • 이미연;김정수;서준호;최성만;홍봉근
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2010년도 제35회 추계학술대회논문집
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    • pp.781-783
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    • 2010
  • 전북대학교 고온 플라즈마 응용 연구 센터 구축사업단은 교육과학기술부 기초연구사업 중 고가연구장비 구축사업을 통하여 고부가가치 재료 연구 및 시험생산이 가능한 소재공정용 60kW 와 200kW ICP(RF) 플라즈마 발생장치를 구축하고 있다. 나노분말소재의 합성과 플라즈마 용사 코팅이 가능한 대형 ICP(RF) 플라즈마 장치 구축을 통하여 차세대 전자 부품 소재의 개발 및 고온 플라즈마 기술의 산업화에 이바지 하고자 한다.

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The Effect of Uni-nanoadditive Manufactured Using RF Plasma Processing on Core-shell Structure in MLCC

  • Song, Soon-Mo;Kim, Hyo-Sub;Park, Kum-Jin;Sohn, Sung-Bum;Kim, Young-Tae;Hur, Kang-Heon
    • 한국세라믹학회지
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    • 제46권2호
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    • pp.131-136
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    • 2009
  • Radio frequency (RF) plasma treatment is studied for the size reduction and the spheroidization of coarse particles to change them into nano-sized powders of spherical shape in MLCC fields. The uni-nanoadditives manufactured by RF plasma processing for high dispersion have been investigated for the effect on core-shell structure in dielectrics of MLCC. Microstructures have been characterized using scanning electron microscope (SEM), transmission electron microscope (TEM) and Electron Probe Micro Analyzer (EPMA). We compared the distribution of core-shell grains between specimens manufactured using uni-nanoadditive and using mixed additive. In addition, the uniformity of rare earth elements in the core-shell structured grains was analyzed. It was shown, from TEM observations, that the sintered specimen manufactured using uni-nanoadditives had more dense small grains with well-developed core-shell structure than the specimen using mixed additives, which had a homogeneous microstructure without abnormal grain growth and shows broad temperature coefficient of capacitance (TCC) curves in all temperature ranges because of well dispersed additives.

EVALUATION OF WATER REPELLENCY FOR SILICON OXIDE FILMS PREPARED BY RF PLASMA-ENTRANCED CVD

  • Sekoguchi, Hiroki;Hozumi, Atsuhi;Kakionoki, Nobuyuki;Takai, Osamu
    • 한국표면공학회지
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    • 제29권6호
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    • pp.781-787
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    • 1996
  • Silicom oxide films with good water repellency were prepared by rf plasma-enhanced CVD (rf-PECVD) using four kinds of organosilicon compound, which had different number of methyl ($CH_3$) groups, and oxygen as gas sources. The differences in the deposition rates, film composition and film properties were studied in detail. Water repellency depended on the number of $CH_3$ groups in the organosilicon compounds and the partial pressure of oxygen in the plasma. The highest contact angle for water drops, about 95 degrees, was obtained when trimethy lmethoxy silane (TMMOS) was used. The contact angle decreased with the amount of oxygen gas introduced into the plasma. The dissociation of $CH_3$ groups by adding oxygen was comfirmed by Fourier transform infrared spectroscopy(FTIR) and X-ray photoelectron spectroscopy (XPS). The optical properties were estimated by double-beam spectroscopy and ellipsometry. The transmittance of the glass plate coated by the film prepared with tetramethoxy silane (TMOS) was about 90% and the refractive index of film was 1.44. This value was smaller than the refractive index of a glass plate(soda lime glass, refractive index is 1.515) and this film played a role of anti-refractive coating.

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Power Dissipation in a RF Capacitively Coupled Plasma

  • Tran, T.H.;You, S.J.;Kim, J.H.;Seong, D.J.;Jeong, J.R.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.203-203
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    • 2013
  • Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

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