• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.157.1-157
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• 2001

A new methodology is presented to diagnose faults in equipment plasma. This is accomplished by using neural networks as a pattern recognizer of radio frequency(rf) impedance match data. Using a realtime match monitor system, the match data were collected. The monitor system consisted mainly of a multifunction board and a signal flow diagram coded by Visual Designer. Plasma anomaly was effectively represented by electrical match positions. Twenty sets of fault-symptom patterns were experimentally simulated with experimental variations in process factors, which include rf source power, pressure, Ar and O$_2$ flow rates. As the inputs to neural networks, two means and standard deviations of positions were used ...

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.112-112
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.374-378
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• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.315-315
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• 2007

본 논문에서는 DLC (Diamond-like carbon)박막이 가지는 높은 경도, 낮은 마찰계수, 전기적 절연성, 화학적 안정성 등의 특성을 이용하여, 리소그래피를 위한 resist나 hard coating물질로써 응용하기 위해, DLC 박막의 에칭에 관한 연구를 진행하였다. DLC 박막의 합성 과 에칭은 13.56 MHz RF plasma enhanced vapor deposition technique를 통해 이루어졌으며, DLC 박막은 150 W의 RF Power에서 메탄 $(CH_4)$과 수소$(H_2)$ 가스를 이용하여 약 300 nm의 두께로 제작되었으며, DLC박막의 에칭은 RF power의 변화 (50~250 W)와 산소 $(O_2)$가스의 유량변화 (5~25 sccm)에 따라 실시하였다. 에칭 되어진 DLC 박막의 표면 특성들은 AFM (atomic force microscopy)과 contact angle 장치를 사용하여 측정되었고, 측정된 결과로써 DLC 박막은 RF power와 산소 가스의 유량이 높을수록 etching rate는 증가하였고, 박막의 표면은 거칠어졌으며, 결국 DLC 표면에서는 산소에 의한 결합의 증가로 인해 친수성을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.179.2-179.2
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• 2013

A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.331-334
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• 2010

In the present study, carbon supports mixed with purified multi-walled carbon nanotubes (MWNTs) and carbon blacks (CBs) were used to improve the cell performance of direct methanol fuel cells (DMFCs). Additionally, the effect of $O_2$ plasma treatment on CBs/MWNTs supports was investigated for different plasma RF powers of 100, 200, and 300 W. The surface and structural properties of the CBs/MWNTs supports were characterized by FT-IR, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and inductive coupled plasma-mass spectrometer (ICP-MS). The electrocatalytic activity of PtRu/CBs/MWNTs catalysts was investigated by cyclic voltammetry measurement. In the experimental results, the oxygen functional groups of the supports were increased with increasing plasma RF power, while the average Pt particle size was decreased owing to the improvement of dispersibility of the catalysts. The electrochemical activity of the catalysts for methanol oxidation was gradually improved by the larger available active surface area, itself due to the introduction of oxygen functional groups. Consequently, it was found that $O_2$ plasma treatments could influence the surface properties of the carbon supports, resulting in enhanced electrocatalytic activity of the catalysts for DMFCs.

• Carbon letters
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• v.12 no.1
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• pp.16-20
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• 2011

Commercial PAN fibers were thermally stabilized at 220 or $240^{\circ}C$ for 30 min. Those fibers were further stabilized using radio-frequency (RF) capacitive plasma discharge during 5 or 15 min. From Fourier transform infrared spectroscopy results, it was observed that an additional plasma treatment led to further stabilization of PAN fibers. After stabilization, carbonization was performed to investigate the final tensile properties of the fabricated carbon fibers (CFs). The results revealed that a combination of thermal and plasma treatment is a possible stabilization process for manufacturing CFs. Morphology of CFs was investigated using scanning electron microscopy. The morphology shows that the plasma stabilization performed by the RF large gap plasma discharge may damage the surface of the CF, so it is necessary to select a proper process condition to minimize the damage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.