• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.4
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• pp.204-208
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• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.508-509
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• 2013

본 논문에서는 400kHz 10kW RF Source와 최대전력전달을 하기 위해 가변임피던스 정합기를 이용하여 파워 소스를 준비하였고, 송수신코일은 EE71형태의 페라이트코어에 테프론 와이어를 결선하여 구성하였다. 본 연구에서는 MF대역의 주파수를 이용하므로 자기유도방식을 채택하였다. 무선전력전송에서는 최대로 전력이 전달하기 위하여 송수신 코일과 부하간에 임피던스 매칭이 필수적으로 필요하다. 매칭이 원할하지 않을 경우 RF Source에 반사전력이 반사되어 심각한 손상을 발생할 수 있으며, 수신부 코일의 부하단에 최대로 전력이 전달되지 않을 뿐만 아니라 전체 시스템 효율이 나빠지게 된다 본 연구에서는 임피던스 정합기를 이용하여 자기유도방식에서 최적의 송수신 전송 조건을 도출하였다.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1123-1126
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar- I line, luminance were investigated. At this time the input parameter for ICP RF plama, Ar gas pressure and RF power were applied in the range of $10{\sim}60m$ Torr, $10{\sim}300W$ respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.74-78
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• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.67-67
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• 2003

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.5
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• pp.35-41
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• 2004

In computational study on RF(Radio Frequency) plasmas, a 1D fluid models with an advantage of a short computational time are often adopted. However, in order to obtain realistic calculation results under a typical chamber geometry with unequal-sized electrodes, modeling of the plasma space is an issue to be investigated. In this paper, it is focused on that how much a 1D model can approximate a 2D model. 1D fluid models with unequal-sized electrodes, which have spherical and frustum geometry systems, were developed and their results were compared with those of 2D model with Gaseous Electronic Conference cell structure. Behavior of $N_2$ RF plasmas has been simulated using 1D and 2D fluid models and a technique to take account of unequal-sized electrodes in a 1D fluid models has been examined. Features of the plasma density and the electric potential were discussed as characteristic quantities representing the asymmetry of the chamber geometry.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.