• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.100-100
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• 1999

가시광선 영역에서 높은 광학적 투과성과 함께 우수한 전기 전도성을 갖는 ITO 박막은 디스플레이 소자나 투명전극재료 등 다양한 분야에서 응용성이 더욱 증대되고 있다. 증착기판으로서 유리를 사용할 때 생기는 활용범위 제한을 극복하고자 최근 유기물 위에 증착이 가능한 저온 증착방법에 대한 연구가 활발히 이루어지고 있다. 그 가운데 이온빔과 같은 energetic한 beam을 이용한 박막의 제조는 기판을 플라즈마 발생지역으로부터 분리시켜 이온빔의 flux 및 에너지, 입사각 등의 자유로운 조절을 통해 상온에서도 우수한 성질의 박막 형성 가능성이 제시되어 왔다. 본 연구에서는 ion beam assisted evaporation방법을 이용하여 ITO 박막을 성장시켰으며, ion-surface interaction 효과가 박막 성장주에 미치는 영향을 이해하기 위하여 먼저 반응성 산소 이온빔에 비 반응성 아르곤 이온빔을 다양하게 변화시켜가며 증착하였으며, 이와 더불어 산소 분위기에서 아르곤 이온빔에 의한 ITO 박막의 특성 변화를 각각 관찰하였다. 증착전 후의 열처리 없이 상온에서 비저항이 ~10-4$\Omega$cm 이하로 낮고 80% 이상의 투과율을 갖는 ITO 박막을 성장시켰다. 실험에서 이용된 e-beam evaporation 물질은 In2O3-SnO2(1-wt%)였으며, 이온빔 source는 산소에 의한 filament의 산화를 막기 위해 filament cathodes type이 아닌 rf(radio-frequency)를 사용하였다. 중요 증착변수인 이온빔의 flux 변화는 산소와 Ar의 flow rate를 MFC로 조절하고 rf power를 변화시켜 얻었으며, 이온빔 에너지는 가속 grid의 가속전압 변화와 ion gun과 기판사이의 거리 조절을 통해 최적화하였다. 이온빔의 에너지와 flux는 Faraday cup으로 측정하였으며, 성박된 박막의 특성은 UV-spectrometer, 4-point probe, Hall measurement. $\alpha$-step, XRD, XPS 등을 이용하여 광학적, 전기적, 구조적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.537-537
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• 2013

Cyclotron-accelerated ion beams are used for various researches, such as nuclear physics, nuclear chemistry, biotechnology, and material sciences including radio-isotope production. Recently considerable applications are asked to the cyclotron development undertaken to meet user requirements of various ions'energies, intensities, and their pulsed beams. For instance, a cocktail beam acceleration technique rapidly changing the ion species and energies was developed to irradiating integrated circuit chips. Also a chopping system in a cyclotron injection line is considered for producing a pulsed ion beam with a relatively long period compared with that generated by the resonance frequency. For the research in neutron time-of-flight measurement, a single-pulsed beam with a repetition interval of the order of mili-seconds or longer is necessary to have a good resolution and to remove background events. In this paper a feasibility of pulsed beam with an external ion source is simulated by adopting a combination system of a chopper accompanying with a bunching stage in the injection line and an additional chopper after the exit of the cyclotron in order to produce beam pulses with a range of $1{\mu}s{\sim}1ms$ periods from a resonance RF cycle. The pulseperiod will be adjusted by chopping the number of beam bunches from the injected pulses in the injection line. However, the longer pulses will have reduced number of beam pulses and sacrificed beam currents. Because the beam users need an intense single pulsed beam, a careful tuning of the acceleration phase and a high-intense external ion source are necessary to achieve an intense single-pulsed beam from the cyclotron. It is essential to strictly match the acceleration phase of injected beams in the central region of the cyclotron to improve its efficiency. An effect of space charge at each pulse from the ion source will be also considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.502-502
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• 2012

반도체 공정 중 플라즈마를 이용하는 식각 공정의 경우, 실제 식각률이나 profile의 특성은 RF Bias power에 의해 기판에 당겨지는 이온 선속에 의해 큰 영향을 받는다. 때문에 플라즈마 발생장치 내에서 기판에서의 이온에너지 분석이 중요해지고 있다. 이온에너지 분석을 위해 다양한 형태의 이온에너지 분석기가 나와있으나 기판 위에 얹혀있는 양상이었다. 이에 본 발표에서는 실제 기판 안에 이온에너지 분석기를 설치함으로써 실제 기판에서 wafer가 받는 이온들의 양상에 더 가깝게 접근했다. 이렇게 제작 된 이온에너지 분석기를 이용해 대면적 M-ICP(Magnetized-Induced Coupled Plasma)에서 아르곤 가스를 이용한 플라즈마에서 기판 이온 에너지 분포를 확인해 보았다. 압력의 변화, ICP Source power의 변화, 일정한 Source power에서 기판에 가해지는 Bias power의 변화에 대해 측정함으로써 각각의 조건 변화에 따른 이온들의 변화양상에 대한 이해를 할 수 있었다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1704-1706
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• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.121-121
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• 2004

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.345-349
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• 1996

The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.