• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.312-312
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• 2008

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.220-225
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• 2004

A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$＃/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.472-474
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• 1995

A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2044-2046
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• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.

• Mass Spectrometry Letters
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• v.4 no.4
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• pp.91-94
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• 2013

We performed computer simulations to improve transmission efficiencies of a dual ion funnel system implemented on an FT-ICR MS. We found that the low m/z range from 50 to 150 could be significantly improved by operating the two ion funnels at different RF amplitudes. These new operational conditions could be applied to analyze metabolome samples, which require high sensitivity in the m/z range from 50 to 1,000.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.24-29
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• 2004

$CF_4$ gas is one of the most useful gases in modern technologies for semiconductor fabrication. However, there are many problems which should be solved in order to fabricate semiconductor device, for example, etching speed drop due to ion charge-up and etching selectivity drop due to the high electron energy. One of useful method in order to suppress their damages above is pulsed-time modulated plasma (PM). However, transient responses of charged particles occur when the source power is turned-on and -off in PM method. To control plasma properties in detail, such a transient phenomenon must be investigated. In this paper, we investigate $CF_4$ RF plasma properties under a one-dimensional fluid model. And also for dynamic and stable control of $CF_4$ plasmas, we investigated the transient behavior of the plasmas after step up or down of the amplitude of the power source voltage $V_s$(t). Fundamental properties of transient $CF_4$ plasmas was discussed. Furthermore, we intend to discuss new method for pulsed-time plasma modulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.133-136
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• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.