• 제목/요약/키워드: RF duplexer

검색결과 19건 처리시간 0.027초

Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

  • Shin, Jea-Shik;Song, Insang;Kim, Chul-Soo;Lee, Moon-Chul;Son, Sang Uk;Kim, Duck-Hwan;Park, Ho-Soo;Hwang, Sungwoo;Rieh, Jae-Sung
    • ETRI Journal
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    • 제36권2호
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    • pp.317-320
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    • 2014
  • A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

가속수명시험을 이용한 RF SAW 듀플렉서의 수명예측 (Lifetime Prediction of RF SAW Duplexer Using Accelerated Life Testing)

  • 김영구;김태홍;강상기
    • 한국통신학회논문지
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    • 제39A권10호
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    • pp.616-618
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    • 2014
  • 본 논문에서는 RF SAW 듀플렉서에 대하여 가속수명시험을 설계하고 수명예측방법에 대하여 제시하였다. 가속수명시험설계 시 가속스트레스는 RF 입력전력으로 정하고 삽입손실이 0.5[dB] 증가하는 기간을 듀플렉서의 수명으로 정의하였다. 듀플렉서의 수명예측결과는 $85^{\circ}C$ 주위온도와 30[dBm] RF입력전력에서 약 82,900시간으로 추정되었다.

26GHz 대역 박막 Duplexer 설계에 관한 연구 (A Study on the Design of 26GHz Band Thin Duplexer)

  • 윤종남;이현주;오용부;이청운;김기돈;이정해
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.208-213
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    • 2003
  • 본 논문에서는 mm대역에서 NRD를 사용하여 듀플렉스를 디자인하였다. 디자인된 듀플렉스는 두개의 단계적인 임피던스 필터와 T-junction으로 구성되어 있다. 단계적인 임피던스 필터는 무한 도파관의 등가회로모델과 리턴로스를 최소화하기 위해서 선택되어진 T-junction과 함께 디자인되었다. 듀플렉서의 특성은 기대되었던 결과와 함께 우수한 일치를 보여준다.

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Design of Multipactor-free S-band Duplexer Using New Test Method for Space Applications

  • Choi, Seung-Woon;Kim, Day-Young;Kwon, Ki-Ho;Won, Young-Jin;Lee, Yun-Ki
    • Journal of electromagnetic engineering and science
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    • 제6권4호
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    • pp.217-221
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    • 2006
  • Multipactor-free S-band duplexer based on inter-digital cavity type filter is proposed and demonstrated by in-house mulitpactor test facility for satellite RF components. Multipactor sensitivity of designed duplexer is analyzed by checking it out the maximum field accumulated region inside duplexer and calculating the electric field intensities at each resonator using 3D EM simulation in order to restrict the minimum gap distance as 2.5 mm which handles 43.13 dBm RF input power. Multipactor threshold was finally detected at 44 dBm in experiment for pulse mode test. The developed multipactor test method is cost effective, simple structure and gives a good agreement compared with the previous high cost MP test methodologies.

W-CDMA RF 수신기 전단의 최소 요구사항 (Minimum Requirement of Front-End in W-CDMA RF Receiver)

  • 심재성;육종관;박한규;하동인
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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    • pp.205-208
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    • 2002
  • This paper presents a quantitative analysis on the intermodulation product between transmitter W-CDMA leakage signal and receiver out of band blocker, and proposes design guide lines for overcoming the effect in receiver design. Our analysis shows that duplexer isolation, attenuation and LNA IIP3 are mainly responsible for the 3rd order intermodulation product. Analysis also shows that LNA IIP3 required for meeting 3GPP TS 34.121 specification is about 1 ㏈m with duplexer isolation of 50 ㏈ and duplexer attenuation of 24㏈.

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Even Harmonic Mixer를 이용한 2.4GHz ISM band용 Direct Conversion방식의 RF Module 설계 및 제작 (Design and Fabrication of Direct Conversion RF Module using Even Harmonic Mixer for 2-4GHz ISM band)

  • 이주갑;윤영섭;최현철
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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    • pp.222-226
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    • 2001
  • In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

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CDMA방식의 PCS 전화기를 위한 새로운 방식의 고주파 전위회로에 관한 연구 (Novel RF front-end circuit for CDMA based PCS phone)

  • 윤기호;박한규
    • 한국통신학회논문지
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    • 제23권6호
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    • pp.1602-1609
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    • 1998
  • 본 논문은 CDMA 방식의 PCS 전화기용 고주파 전위회로에 관한 것으로 전력증폭기와 듀플렉서를 결합하여 하나의 모듈로 구성하였다. 기존의 듀플렉서를 구성하고 있는 유전체 여파기들이 서로 분리되어 전력증폭기내에서 재배치되며 특히 송신용 대역저지여파기가 전력증폭기의 구동증폭기 이후에 위치된다. 결합모듈은 크기가 1.5CC에 불과하여 전화기 소형화에 크게 기여할 것으로 기대된다. 출력 24dBm에서 IS-95에 준하는 CDMA 선형특성을 만족하였으며 PCS 송수신 주파수대역에서 필요한 감쇠특성을 나타내어 듀플렉서로서 역할도 수행하였다. 결합모듈의 출력단자가 곧바로 안테나에 연결되므로 결합전보다 출력이 줄어들게 되어 이에 상응하는 동작전류가 줄어들었으며, CDMA 전화기가 실제 환경에서 동작시 출력크기의 대부분이 선형영역에 있는 점을 감안하여 전력증폭기의 동작점을 B급으로 제한하여 전류소모를 줄였다. 이 결과 약 95mA 의 드레인 전류를 절약할 수 있었다.

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유리 기판과 패인 홈 모양의 홀을 갖는 웨이퍼를 이용한 웨이퍼 레벨 패키지 (Wafer Level Package Using Glass Cap and Wafer with Groove-Shaped Via)

  • 이주호;박해석;신제식;권종오;신광재;송인상;이상훈
    • 전기학회논문지
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    • 제56권12호
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    • pp.2217-2220
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    • 2007
  • In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

900MHz대역 수신기용 RF 특성평가보드의 설계 및 제작 (Design and Fabrication of RF evaluation board for 900MHz)

  • 이규복;박현식
    • 마이크로전자및패키징학회지
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    • 제6권3호
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    • pp.1-7
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    • 1999
  • 본 연구에서는 900MHz대역 수신기용으로 선행 개발되어진 RF 칩세트를 장착한 RF 특성평가 보드를 개발하였으며, 환경평가시험을 수행하였다. 선행 개발되어진 RF-IC 칩에는 저잡음증폭기, 하향변조 주파수혼합기, AGC Amp, SW-CAP 필터 등을 포함하고 있으며, 이에 따른 정합회로와 RF/IF SAW 필터, 듀플렉서 필터 및 전원공급회로를 RF 특성평가보드에 첨가하여 제작하였다. 공급전원은 2.7에서 3.6V이며, RF 보드의 소모전류는 42mA로 나타났으며, 동작 주파수는 RF 입력이 925~960MHz으로 제작, 측정되었다. 측정결과 일반적인 900MHz용 디지털 이동통신단말기의 RF 수신특성과 유사하게 양호한 결과를 보였다.

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800MHz 대역 이동통신 단말기용 듀플렉서의 설계 및 분석 (Fabrication of 800MHz Duplexer Using SAW Filter)

  • 이택주;권희두;정덕진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(1)
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    • pp.245-248
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    • 2001
  • In this paper, we have investigated the design technique and fabricated the surface acoustic wave (SAW) filter for duplexer, which consists of Tx. and Rx. filter, and antenna terminal. For Tx. and Rx. bandpass filters we used the one-port SAW resonators with n-section ladder structure. The structure is composed of couples of series-arm resonators and parallel-arm resonators. RF filter using ladder structure was designed and fabricated on 36$^{\circ}$Y-X LiTaO$_3$ substrates. Designed filters, insertion loss is less than 1.5dB, the bandwidth is more than 25MHz, rejection band level is less than -30dB and center frequency is 820MHz.

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