• ETRI Journal
• /
• v.36 no.2
• /
• pp.317-320
• /
• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.39A no.10
• /
• pp.616-618
• /
• 2014

In this paper, we designed the accelerated life testing(ALT) and presented the lifetime prediction method of the RF SAW duplexer. We determined RF input power as an accelerated stress when designing an accelerating life testing and defined the lifetime of the duplexer as the period during which the insertion loss increased by 0.5[dB]. Lifetime prediction results of duplexer was estimated for 82,900hours at an ambient temperature of $85^{\circ}C$ and RF input power of 30[dBm].

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.208-213
• /
• 2003

In this paper, we have designed the duplexer using non-radiative dielectric (NRD) guide in millimeter band. The designed duplexer is composed of two stepped-impedance filters and T-junction. Stepped-impedance filters are designed with an equivalent circuit model of evanescent waveguide and the T-junction is optimized to minimize return loss. The characteristics of duplexer shows a good agreement with the expected results.

• Journal of electromagnetic engineering and science
• /
• v.6 no.4
• /
• pp.217-221
• /
• 2006

Multipactor-free S-band duplexer based on inter-digital cavity type filter is proposed and demonstrated by in-house mulitpactor test facility for satellite RF components. Multipactor sensitivity of designed duplexer is analyzed by checking it out the maximum field accumulated region inside duplexer and calculating the electric field intensities at each resonator using 3D EM simulation in order to restrict the minimum gap distance as 2.5 mm which handles 43.13 dBm RF input power. Multipactor threshold was finally detected at 44 dBm in experiment for pulse mode test. The developed multipactor test method is cost effective, simple structure and gives a good agreement compared with the previous high cost MP test methodologies.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2002.11a
• /
• pp.205-208
• /
• 2002

This paper presents a quantitative analysis on the intermodulation product between transmitter W-CDMA leakage signal and receiver out of band blocker, and proposes design guide lines for overcoming the effect in receiver design. Our analysis shows that duplexer isolation, attenuation and LNA IIP3 are mainly responsible for the 3rd order intermodulation product. Analysis also shows that LNA IIP3 required for meeting 3GPP TS 34.121 specification is about 1 ㏈m with duplexer isolation of 50 ㏈ and duplexer attenuation of 24㏈.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2001.11a
• /
• pp.222-226
• /
• 2001

In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.23 no.6
• /
• pp.1602-1609
• /
• 1998

In this paper, the design and implementation of the novel RF front end circuit for CDMA based PCS phone is described. This novel scheme is realized by building the power amplifier module combined with duplexer. The dielectric filters which are parts of duplexer are broken up and relocated into the module. Electromagnetic analysis for via holes and coupling between narrow transmissio lines is icluded to design a circuit. The combined moule has been minimaturized to be as small as 1.5CC. It has satisfied IS-95 requirements for linearity performances of CDMA signal at 24-dBm output power as well as played apart as a duplexer. The operating current of about 95mA has been saved owing to both rearranging dielectric filters and limiting operating point to class-B by considering real working power range of CDMA phones.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2217-2220
• /
• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.1-7
• /
• 1999

A single RF transceiver evaluation board have been developed for the purpose of application to the 900MHz band transceiver contained RF-IC chip And environment test was evaluated. The RF-IC chipset includes LNA(Low Noise Amplifier), down-conversion mixer, AGC(Automatic Gain Controller), switched capacitor filter and down sampling mixer. The RF evaluation board for the testing of chipset contained various external matching circuits, filters such as RF/IF SAW(Surface Acoustic Wave) filter and duplexer and power supply circuits. With the range of 2.7~3.3V the operated chip revealed moderate power consumption of 42mA. The chip was well operated at the receiving frequency of 925~960MHz. Measurement result is similar to general RF receiving specification of the 900MHz digital mobile phone.

• Proceedings of the IEEK Conference
• /
• 2001.06a
• /
• pp.245-248
• /
• 2001

In this paper, we have investigated the design technique and fabricated the surface acoustic wave (SAW) filter for duplexer, which consists of Tx. and Rx. filter, and antenna terminal. For Tx. and Rx. bandpass filters we used the one-port SAW resonators with n-section ladder structure. The structure is composed of couples of series-arm resonators and parallel-arm resonators. RF filter using ladder structure was designed and fabricated on 36$^{\circ}$Y-X LiTaO$_3$ substrates. Designed filters, insertion loss is less than 1.5dB, the bandwidth is more than 25MHz, rejection band level is less than -30dB and center frequency is 820MHz.