• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1066-1068
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• 1999

Magnetic field is commonly used in low temperature processing plasmas in order to obtain high density. E $\times$ B magnetron or surface multipole configuration were most popular. However, the properties of capacitively coupled rf plasma confined by axially applied static magnetic fields have rarely been studied. In this paper, the effects of magnetic field on the characteristics of 13.56MHz/40KHz argon plasma will be reported. Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and omissive probe. At low pressure region ($\sim$10mTorr), ion current was increased by a factor of 3 - 4 due to reduction of diffusion loss of charged particles to the wall. It was observed that magnetic field induces large time variation of the plasma potential. The experimental result was compared with particle-in-cell simulation. It was also observed that electron temperature tend to decrease with increasing magnetic induction level for 40KHz discharge.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.540-547
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• 2004

In this paper, a current - mode class D(CMCD) power amplifier over 70 % power added efficiency at 900 ㎒ is designed and implemented. Based on push-pull class B structure, main power loss due to charge and discharge of output capacitance in switching mode power amplifier is minimized by applying a parallel harmonic control circuit. Experimental CMCD amplifier with 73 % power added efficiency at 3.2 W and 72 % power added efficiency at 5 W are achieved respectively. In addition a characteristic of switching mode power amplifier whose output power is proportional to magnitude of U power is verified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1555-1559
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• 1997

The thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56[MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was found that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• Journal of Applied Reliability
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• v.11 no.3
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• pp.251-265
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• 2011

Low-noise amplifier(LNA) is a component that amplifies the signal while lowering the noise figure of high-frequency signal. LNA holds a very important position in RF system so that it is widely used for telecommunication. Electro static discharge(ESD) is the most common cause of malfunction for low-powered components, such as Large Scale Integration and IC type LNA is weak in ESD. This thesis studies static effect of communication LNA. It analyzes ESD effect, which occurs within LNA circuit, and describes testing standard and methods. In order to find out LNA's susceptiblity to electro static, two well-recognized communication IC type LNA models were selected to be tested. Then static-induced malfunction was carefully analyzed and it suggests architectural problem and improvement from the LNA's ESD point of view.

• Macromolecular Research
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• v.12 no.1
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.214-215
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• 2007

Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.71-77
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• 2013

Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.550-551
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• 2005

고밀도 유도결합 플라즈마 장치의 $O_2$ 방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $O_2$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온 및 중성종, 활성종들에 대해 공간 평균된 유체 방정식을 기반으로 하고 있으며, 고밀도 유도결합 플라즈마 장치에서 전자가열 모델은 anomalous skin effect 를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF- 파워, gas-inlet, pumping-speed등의 조정 변수를 비롯한 여러 가지 장치 변수들의 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• Textile Coloration and Finishing
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• v.16 no.5
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• pp.28-34
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• 2004

The polarizing film application exploits the unique physicochemical properties between PVA(Poly vinyl alcohol) film and CTA(Cellulose triacetate) film. However, hardly any research was aimed at improving the adhesion characteristics of the CTA film by radio frequency(RF) plasma treatment at argon(Ar) gaseous state. In this report, we deal with surface treatment technology for protective CTA film developed specifically for high adhesion applications. After Ar plasma, surface of the films is analyzed by atomic force microscopy(AFM), roughness parameter and peel strength. Furthermore, the wetting properties of the CTA film were studied by contact angle analysis. Results obtained for CTA films treated with a glow discharge showed that this technique is sensitive to newly created physical functions. The roughness and peel strength value increased with an increase in treatment time for initial treatment, but showed decreasing trend for continuous treatment time. The result of contact angle measurement refer that the hydrophilicity of surface was increased. AFM studies indicated that no considerable change of surface morphology occurred up to 3 minutes of treatment time, but a considerable uneven of surface structure resulted from treating time after 5 minutes.