• Proceedings of the IEEK Conference
• /
• 2000.11a
• /
• pp.197-200
• /
• 2000

In this paper, The RF system of W-CDMA receiver is designed and the performance is analyzed. The linearity characteristic and the noise characteristic are presented in the performance. The linearity characteristic is analyzed by PN and IIP3. The noise characteristic is analyzed by NF. In addition, sweeping of the nonlinear components parameter affecting the linear performance is tested and the most maximal possible parameter to maintain the linear performance is introduced. The transceiver RF system of W-CDMA and cdma2000 is designed and presented adapting the nonlinear parameter introduced.

• Journal of electromagnetic engineering and science
• /
• v.3 no.1
• /
• pp.1-6
• /
• 2003

In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2001.11a
• /
• pp.222-226
• /
• 2001

In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

• Journal of electromagnetic engineering and science
• /
• v.17 no.4
• /
• pp.191-196
• /
• 2017

Microwave wireless power transmission (MWPT) is a promising technique for low and medium power applications such as wireless charging for sensor network or for biomedical chips in case with long ranges or in dispersive media such. A key factor of the MWPT technique is its efficiency, which includes the wireless power transmission efficiency and the radio frequency (RF) to direct current (DC) voltage efficiency of RF-DC converter (which transforms RF energy to DC supply voltage). The main problem in designing an RF-DC converter is the nonlinear characteristic of Schottky diodes; this characteristic causes low efficiency, higher harmonics frequency and a change in the input impedance value when the RF input power changes. In this paper, rather than using harmonic termination techniques of class E or class F power amplifiers, which are usually used to improve the efficiency of RF-DC converters, we propose a new method called "optimal input impedance" to enhance the performance of our design. The results of simulations and measurements are presented in this paper along with a discussion of our design concerning its practical applications.

• Journal of electromagnetic engineering and science
• /
• v.3 no.2
• /
• pp.111-117
• /
• 2003

We propose a diode-based RF pre-distorter with various gain and phase characteristics, for non-linearity compensation of RF power amplifiers. This pre-distorter results in the removal of the diode- and configuration-dependent characteristics in the conventional diode-based RF pre-distorters. We have analyzed the operation principle of the proposed pre-distorter. The results show that gain and phase characteristics of the pre-distorter in all four quadrants are achieved. Several power amplifiers and test signals are used for verifying the performance of the proposed diode-based RF pre-distorter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.451-452
• /
• 2006

We studied the electro-optical characteristic of vertical alignment liquid crystal display(VA-LCD) on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. LC alignment characteristic showed homeotropic alignment, and pretilt angle was about $90^{\circ}$. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and the electro-optical characteristic of the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system was excellent.

• Proceedings of the IEEK Conference
• /
• 2002.07b
• /
• pp.1046-1049
• /
• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.1
• /
• pp.90-98
• /
• 1999

This paper presents a wideband single-balanced mixer using a diode which can be used in RF receiver of microwave measurement systems. For wideband characteristic, local oscillator(LO) signal is provided to diode with low loss using a coplanar waveguide-to-slotline balun. For high isolation characteristic radio frequency (RF) port and intermediate frequency (IF) port are designed using directional coupler. This mixer presents 30.5~31.17dB conversion loss whose flatness is within 1dB for 9 kHz~2.6 GHz wideband RF signal, and above 30 dB isolation for LO signal.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.6 no.5
• /
• pp.697-702
• /
• 2011

In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. In the electrical characteristic results with deposition pressures and substrate RF bias power in thin film deposition process, we have got dielectric constant of 3.4, high deposition rate of 8.6 [nm/min] and high insulation characteristics in condition of RF100 [W], Ar20 [sccm], 5 [mtorr], RF bias 20 [W]. Therefore, the fabricated thin films are possible as insulation layer of OTFT and organic memory.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.11
• /
• pp.1215-1220
• /
• 2014

In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.