• 제목/요약/키워드: RF Via

검색결과 207건 처리시간 0.028초

Effect of Ginsenosides from Panax ginseng on Proliferation of Human Osteosarcoma Cell $U_2OS$

  • Deqiang Dou;Jie Ren;Yingjie Chen;Youwei Zhang;Xinsheng Yao
    • 고려인삼학회:학술대회논문집
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    • 고려인삼학회 2002년도 학술대회지
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    • pp.376-384
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    • 2002
  • Object To find out which of the 27 ginsenosides isolated from Panax ginseng C.A. Mey that may inhibit the proliferation of human osteosaocoma cell line $U_2OS$. Methods Effects of each individual ginsenoside on the proliferation of $U_2OS$ cell were studied by determining the viability of cancer cells during culture with or without the presence of the test compound. DNA assay was determined by flow cytometry. Results Ginsonosides -Ro, $-Rh_l,\;-Rh_2,\;-F_1\;and\;-L_8$ at concentrations of 5 ,umol/L could obviously suppress the proliferation of $U_2OS$ cells while ginsenosides $-Rg_1,\;-F_3,$ -Rf, PPT and PT significantly inhibited the cancer cells. Flow cytometry revealed that ginsenosides $-Ro,-Rg_1-Rf,-F_1-Rh_2,PPT$ and PT induced cell cycle arrest at $G_0/G_1$ phase with obvious decrease of cell count at Sand $G_2+M$ phase, Moreover, ginsenosides $-Rf_1,-Rg_1,\;-F_1$ and PPT induced significantly high rates of cell death as compared with the control. Conclusion These data suggested that ginsenosides inhibited $U_2OS$ proliferation Via cell cycle arrest or induction of cell death.

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A Review of Assistive Listening Device and Digital Wireless Technology for Hearing Instruments

  • Kim, Jin Sook;Kim, Chun Hyeok
    • 대한청각학회지
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    • 제18권3호
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    • pp.105-111
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    • 2014
  • Assistive listening devices (ALDs) refer to various types of amplification equipment designed to improve the communication of individuals with hard of hearing to enhance the accessibility to speech signal when individual hearing instruments are not sufficient. There are many types of ALDs to overcome a triangle of speech to noise ratio (SNR) problems, noise, distance, and reverberation. ALDs vary in their internal electronic mechanisms ranging from simple hard-wire microphone-amplifier units to more sophisticated broadcasting systems. They usually use microphones to capture an audio source and broadcast it wirelessly over a frequency modulation (FM), infra-red, induction loop, or other transmission techniques. The seven types of ALDs are introduced including hardwire devices, FM sound system, infra-red sound system, induction loop system, telephone listening devices, television, and alert/alarm system. Further development of digital wireless technology in hearing instruments will make possible direct communication with ALDs without any accessories in the near future. There are two technology solutions for digital wireless hearing instruments improving SNR and convenience. One is near-field magnetic induction combined with Bluetooth radio frequency (RF) transmission or proprietary RF transmission and the other is proprietary RF transmission alone. Recently launched digital wireless hearing aid applying this new technology can communicate from the hearing instrument to personal computer, phones, Wi-Fi, alert systems, and ALDs via iPhone, iPad, and iPod. However, it comes with its own iOS application offering a range of features but there is no option for Android users as of this moment.

무선통신소자제작을 위한 45GHz $f_{T}$ 및 50GHZz $f_{max}$ SiGe BiCMOS 개발 (A 45GHz $f_{T}\;and\;50GHz\;f_{max}$ SiGe BiCMOS Technology Development for Wireless Communication ICs)

  • 황석희;조대형;박강욱;이상돈;김남주
    • 대한전자공학회논문지SD
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    • 제42권9호
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    • pp.1-8
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    • 2005
  • 최근 Mobile용 RF ICs 적용을 위한 RF CMOS 기술과 함께 핵심 기술로 SiGe Heterojunction Bipolar Transistor (HBT) 소자 개발의 중요성이 증대되고 있다. 본 논문은 현재 5GHz 동작 수준의 RF제품에서 주로 사용되는 기술인 $0.35\{mu}m$ 설계 Rule을 적용하여 $f_{max}$ 50GHz에서 동작하는 SiGe BiCMOS 기술 개발에 대한 내용을 논의한다. 본 SiGe HBT에 사용하는 에피막 성장 기술은 Trapezoidal Ge base profile 및 non-selective 방식이고, 에미터 RTA 조건 및 SiGe HBT base에 대한 Vertical Profile 최적화를 수행하였다. hFE 100, $f_{T}\;45GHz,\;NF_{min}\;0.8dB$ 수준으로 우수한 특성 및 기술 경쟁력을 갖는 SiGe BiCMOS 공정 개발 및 양산 기술을 확보하였다. 또한, 기존의 0.35um설계 Rule공정 target떼 부합되는 CMOS소자를 포함시켰으며, RF용 Passive소자로 높은 Q값을 갖는 MIM capacitor(1pF, Q>80), Inductor(2nH $Q\~$l2.5)를 제공하였다

Hybrid MBE Growth of Crack-Free GaN Layers on Si (110) Substrates

  • 박철현;오재응;노영균;이상태;김문덕
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.183-184
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    • 2013
  • Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was >99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

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갈릴레오 수신기 설계를 위한 RF 성능 분석에 관한 연구 (RF performance Analysis for Galileo Receiver Design)

  • 장상현;이일규;장동필;이상욱
    • 한국위성정보통신학회논문지
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    • 제5권1호
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    • pp.58-62
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    • 2010
  • 본 논문에서는 갈릴레오 수신기 구조의 요구사항을 검토한 후 시뮬레이션을 통해 RF 성능 파라미터들이 갈릴레오 수신기 성능에 어떠한 영향을 주는지 알아보았다. 먼저 갈릴레오 시스템의 일반사항과 갈릴레오 수신기의 구조 및 특성에 대해 고찰하였고, 갈릴레오 수신기의 성능 분석을 위해 에질런트사의 ADS(Advanced Design System)를 이용하여 15 % EVM에 상응하는 16 dB C/N의 갈릴레오 수신기 성능 요구 규격에 초점을 맞춰 갈릴레오 수신기를 설계하였다. AGC(Automatic Gain Control) 동작을 확인하기 위해 수신 파워에 따른 출력 IF의 변화량을 확인하였으며, 일정한 IF 출력을 통해 정상적인 AGC 동작을 확인하였다. 수신기 입력 파워에 의한 성능 분석과 수신기 국부 발진기의 위상 잡음 변경에 따른 성능 열화 분석을 통해 -127 dBm의 입력 파워에서 EVM(Error Vector Magnitude) 변화를 알아보았다. 또한 AGC의 이득 범위(-2.5 dB ~ +42.5 dB)에 의해 결정된 -92 dBm ~ -139 dBm의 입력 파워에서 ADC(Analog to Digital Converter)의 비트 변경에 따른 성능 분석을 하였으며, LO의 위상 잡음이 감소하고 ADC의 비트가 증가함에 따라 EVM이 향상 됨을 알 수 있었다.

Ginsenoside Rg5 promotes muscle regeneration via p38MAPK and Akt/mTOR signaling

  • Ryuni Kim;Jee Won Kim;Hyerim Choi;Ji-Eun Oh;Tae Hyun Kim;Ga-Yeon Go;Sang-Jin Lee;Gyu-Un Bae
    • Journal of Ginseng Research
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    • 제47권6호
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    • pp.726-734
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    • 2023
  • Background: Skeletal muscles play a key role in physical activity and energy metabolism. The loss of skeletal muscle mass can cause problems related to metabolism and physical activity. Studies are being conducted to prevent such diseases by increasing the mass and regeneration capacity of muscles. Ginsenoside Rg5 has been reported to exhibit a broad range of pharmacological activities. However, studies on the effects of Rg5 on muscle differentiation and growth are scarce. Methods: To investigate the effects of Rg5 on myogenesis, C2C12 myoblasts were induced to differentiate with Rg5, followed by immunoblotting, immunostaining, and qRT-PCR for myogenic markers and promyogenic signaling (p38MAPK). Immunoprecipitation confirmed that Rg5 increased the interaction between MyoD and E2A via p38MAPK. To investigate the effects of Rg5 on prevention of muscle mass loss, C2C12 myotubes were treated with dexamethasone to induce muscle atrophy. Immunoblotting, immunostaining, and qRT-PCR were performed for myogenic markers, Akt/mTOR signaling for protein synthesis, and atrophy-related genes (Atrogin-1 and MuRF1). Results: Rg5 promoted C2C12 myoblast differentiation through phosphorylation of p38MAPK and MyoD/E2A heterodimerization. Furthermore, Rg5 stimulated C2C12 myotube hypertrophy via phosphorylation of Akt/mTOR. Phosphorylation of Akt induces FoxO3a phosphorylation, which reduces the expression of Atrogin-1 and MuRF1. Conclusion: This study provides an understanding of how Rg5 promotes myogenesis and hypertrophy and prevents dexamethasone-induced muscle atrophy. The study is the first, to the best of our knowledge, to show that Rg5 promotes muscle regeneration and to suggest that Rg5 can be used for therapeutic intervention of muscle weakness and atrophy, including cancer cachexia.

헬리컬 구조를 이용한 IMT-2000 단말기용 소형 인쇄기판형 안테나 설계 (A Design of Small PCB Antenna using Helical Structure for IMT-2000 Handsets)

  • 김성철;이중근;김혜광
    • 한국전자파학회논문지
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    • 제14권5호
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    • pp.444-449
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    • 2003
  • 본 논문은 IMT-2000 단말기용 인쇄기판형 안테나를 설계 및 제작하였다. 안테나는 FR-4($\varepsilon_{{\gamma}}$/=4.6) PCB 기판에 비아 홀(Via-hole)과 라인을 이용한 헬리컬 구조이며, 급전방식은 GCPW(Grounded Co-Planer Waveguide)로 구현하였다 상용 RF-Tool인 안소프트(Ansoft)사의 HFSS를 사용하여 안테나 구조를 설계하고,주파수 특성 및 복사 특성을 측정한 결과는 설계 주파수 대역인 1.920~2.170 GHz을 만족하였고, 2.045 GHz에서 공진하였으며, 321 MHz의 대역폭(VSWR<2.0) 특성을 나타내었다. 이때 안테나의 복사이득은 -l dBi 임을 확인할 수 있었다. 복사이득은 -l dBi 임을 확인할 수 있었다.

A Protective Layer on the Active Layer of Al-Zn-Sn-O Thin-Film Transistors for Transparent AMOLEDs

  • Cho, Doo-Hee;KoPark, Sang-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Cho, Kyoung-Ik;Ryu, Min-Ki;Chung, Sung-Mook;Cheong, Woo-Seok;Yoon, Sung-Min;Hwang, Chi-Sun
    • Journal of Information Display
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    • 제10권4호
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    • pp.137-142
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    • 2009
  • Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

글라스 기판 위에 증착된 Zin Aluminate 박막의 열처리를 통한 소수성 특성의 향상 (Enhancement of Hydrophobicity by a Heat Treatment of Zinc Aluminate Thin Film Deposited on Glass Substrate)

  • 서상영;윤순길
    • 한국전기전자재료학회논문지
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    • 제33권4호
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    • pp.249-254
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    • 2020
  • An 80 nm thick zinc aluminate thin film was deposited on a glass substrate via radio-frequency (rf) magnetron sputtering and heat treated to analyze changes in the wetting angles due to a surface modification. The thin films were modified from hydrophilic to hydrophobic by a simple thermal treatment. The surface modification from a heat treatment increased the wetting angles up to 111°, which was explained by the relationship with the excess surface area. The wetting angles of the annealed thin films decreased with increasing exposure time under ambient conditions, which was attributed to the oxygen vacancies in the films that were introduced during deposition. The annealed thin films were treated by ionized oxygen via oxygen plasma. After the oxygen plasma treatment, the decreased wetting angles were maintained at ~95° for 11 days.

Buddleja officinalis prevents the normal cells from oxidative damage via antioxidant activity

  • Hong, Se-Chul;Jeong, Jin-Boo;Jeong, Hyung-Jin
    • 한국자원식물학회지
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    • 제21권6호
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    • pp.449-456
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    • 2008
  • The flowers of Buddleja officinalis are used to treat sore and damaged eyes, a condition which is similar to skin wounds. However, whether it has any protective effect on oxidative DNA damage and cell death induced by hydroxyl radical remains unclear. In this study, we evaluated the protective effects of the extracts against oxidative DNA and cell damage caused by hydroxyl radical. DPPH radical, hydroxyl radical, hydrogen peroxide and intracellular ROS scavenging assay, and $Fe^{2+}$ chelating assay were used to evaluate the antioxidant properties. phi X 174 RF I plasmid DNA and intracellular DNA migration assay were used to evaluate the protective effect against oxidative DNA damage. Lastly, MTT assay and lipid peroxidation assay were used to evaluate the protective effect against oxidative cell damage. It was found to prevent intracellular DNA and the normal cells from oxidative damage caused by hydroxyl radical via antioxidant activities. These results suggest that Buddleja officinalis may exert the inhibitory effect on ROS-induced carcinogenesis by blocking oxidative DNA damage and cell death.