• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• 열처리공학회지
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• 제22권3호
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.57-61
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• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 한국초전도ㆍ저온공학회논문지
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• 제11권1호
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• pp.5-8
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• 2009

MgO nanodots have been deposited and formed on top of the substrate surface. Mg was sputtered to form the MgO nanodots on the single crystal substrates by rf-sputtering method and followed by heat treatment in the oxygen ambient. The deposition and formation of MgO nanodots have been controlled systematically using the process variables such as substrate temperature, sputtering time, and rf-power. As the substrate temperature increased from the room temperature the density of MgO nanodots decreased. The optimal conditions of MgO nanodots formation using the rf-sputtering was investigated and the maximum density of more than $230/{\mu}m^2$ on single crystal substrates was obtained when the rf-power of 100 watts was applied for 30 seconds at room temperature. The typical size of MgO nanodots was identified to be <160 nm(diameter) and 4-30nm (height) by atomic force microscopy. The modulated surface morphology was examined through surface images and cross-section analysis and discussed for the artificial pinning sites in the superconducting films.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.36-40
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• 2016

The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.727-732
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• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• Journal of Advanced Marine Engineering and Technology
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• 제24권6호
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• pp.139-146
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• 2000

The development of high performance materials is very important subject in order to enhance the properties of bearings whose role is to transfer energy harmoniously by reducing the problem of friction and wear down, etc. between the interacting solid surfaces in relative motion under high loads in comply with mechanical operating mechanism of engines. In this study, several (100-x)Al-xSn coating films (where x=85, 75, 65 atomic % at Al) on substrates which are abt. 2mm thickenss of Kelmet layer sintered back steel were prepared by using RF sputtering system. These coating films were observed the morphology by SEM(Scanning Electron Microscope) and investigated the crystal structure by XRD(X-ray Diffractor) for their properties. And friction coefficient of these films was measured by ball-on-disc tester for their tribological properties. From the experimental results, it was shown that high performance properties of bearing can be improved greatly by controlling the composition and morphology of material surface with effective use of the plasma-assisted sputtering process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.897-900
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• 2000

Annealing dependencies of the fatigue properties of SrBi$_2$Ta$_2$$O_{9}$ thin films were observed as function of substrate temperature(400-50$0^{\circ}C$) by the rf magnetron sputtering method. With increasing annealing temperature from $600^{\circ}C$ to 85$0^{\circ}C$, flourite phase was crystalized to $650^{\circ}C$ and Bi-layered perovskite phase was crystalized above $700^{\circ}C$. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 101o switching cycles.s.