• Title/Summary/Keyword: RF Sputter

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Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

  • Ko, Kyung-Min;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.328-332
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    • 2014
  • Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

Nano-structural Characteristics of N-doped ZnO Thin Films (N-doped ZnO 박막의 미세 구조 특성)

  • Lee, Eun-Ju;Zhang, Ruirui;Park, Jae-Don;Yoon, Gi-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.11
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    • pp.2385-2390
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    • 2009
  • N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, $N_2O$ gas was employed as a dopant source and various deposition conditions such as $N_2O$ gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

Growth of AlN Thin Film on Sapphire Substrates and ZnO Templates by RF-magnetron Sputtering (RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판과 ZnO 박막 위에 증착한 AlN 박막의 특성분석)

  • Na, Hyun-Seok
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.58-65
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    • 2010
  • AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

Dependence of the Structural, Electrical, and Optical Properties of Al-doped ZnO Films for Transparent Conductors on the Process Atmosphere in Magnetron Sputtering (마그네트런 스퍼터링법으로 증착한 투명전극용 Al도핑된 ZnO의 공정 분위기에 따른 구조적, 전기적, 광학적 특성비교)

  • Yim, Keun-Bin;Lee, Chong-Mu
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.518-520
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    • 2005
  • Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Anode Characteristics of $SnO_x$ Films with Various Oxygen Contents (산소량에 따른 $SnO_x$ 박막의 음극 특성)

  • Moon Hee-Soo;Seong Sang-Hyun;Kim Young-Il;Park Jong-Wan
    • Journal of the Korean Electrochemical Society
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    • v.3 no.3
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    • pp.178-181
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    • 2000
  • In this experiments, tin oxide thin film anode for microbattery was deposited by using RF magnetron sputtering. The RF power and operating pressure during deposition were fixed at $2.5W/cm^2$ and 10mTorr respectively. The partial pressure of oxygen was varied from $0\%\;to\;100\%$ to control oxygen content and metal Sn chips were used further reducing of oxygen content. According to reduction in the oxygen content formation of the irreversible $Li_2O$ was reduced a thin film anode of $SnO_x$ of high capacity was fabricated. The optimum $SnO_x$, thin film was $SnO_{1.43}$ which exhibited a reversible capacity of $ 500{\mu}Ah/cm^2{\mu}m$ and exhibited good reversibility.

A Study on the Characteristics of NiInZnO/Ag/NiInZnO Multilayer Thin Films Deposited by RF/DC Magnetron Sputter According to the Thickness of Ag Insertion Layer (RF/DC 마그네트론 스퍼터로 제조한 NiInZnO/Ag/NiInZnO 다층박막의 Ag 금속 삽입층 두께 변화에 따른 특성 연구)

  • Kim, Nam-Ho;Kim, Eun-Mi;Heo, Gi-Seok;Yeo, In-Seon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.12
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    • pp.2014-2018
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    • 2016
  • Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

Ferroelectrical Properties of SBT Capacitors with various Annealing Atmosphere (다양한 열처리 분위기에 따른 SBT 커패시터의 강유전체 특성)

  • Cho, Choon-Nam;Oh, Young-Choul;Kim, Jin-Sa;Choi, Woon-Shik;Kim, Chung-Hyeok;Park, Young-Pil;Hong, Jin-Woong;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.72-76
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    • 2003
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

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Characterization of ZnO Thin Films and Ga doped ZnO Thin Films Post Annealing for Transparent Conducting Oxide Application (투명전극 응용을 위한 ZnO박막과 Ga 도핑 된 ZnO박막의 성장 후 열처리에 따른 특성분석)

  • Jang, Jae-Ho;Bae, Hyo-Jun;Lee, Ji-Su;Jung, Kwang-Hyun;Choi, Hyon-Kwang;Jeon, Min-Hyon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.567-571
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    • 2009
  • Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

Effects of the Sputtering Thickness and the Incident Angle of Pt Film Deposition as a Counter Electrode for Dye-sensitized Solar Cells (염료감응형 태양전지의 상대전극 Pt 필름 두께와 증착 각도가 효율에 미치는 영향에 관한 연구)

  • Kim, Hee-Je;Yeo, Tae-Bin;Park, Sung-Joon;Kim, Whi-Young;Seo, Hyun-Woong;Son, Min-Kyu;Chae, Won-Yong;Lee, Kyoung-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.3
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    • pp.588-593
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    • 2010
  • Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

Etching characteristics of BST thin films using $BCl_3/Cl_2$/Ar plasma ($BCl_3/Cl_2$/Ar 플라즈마를 이용한 BST 박막의 식각 특성)

  • Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il;Lee, Chul-In;Kim, Tae-Hyung
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.322-325
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    • 2003
  • BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

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