• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.123-123
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• 2008

In this work, amorphous carbon thin films were deposited for hard mask applications by a reactive particle beam (RPB) assisted sputtering system at room temperature. The depositing characteristics of the films were investigated as functions of operating parameters such as reflector bias voltage and RF plasma power. It was confirmed that the deposition rate increased with increasing the reflector bias voltage and RF plasma power. By an atomic force microscope (AFM), it was revealed that the surface roughness was also increased. The total stress in films was determined by the use of the substrate curvature and its result will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.2-342.2
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• 2014

IZO, ITO, ITO 등의 투명전극들 중 Indium Tin Oxide (ITO) 다른 전극에 비해 높은 광투과도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용되고 있다. 본 연구에서는 우수한 투과도의 멀티 layer 단열 창호를 위한 film 개발을 위해 RF magnetron system을 이용하여 Sodalime Glass와 polyethylene terephthalate (PET) substrate에 ITO를 증착함으로써 전기적 광학적 특성을 조사하였다. 실험은 power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. Power는 100 Watt 늘려가며 진행하였고 O2 유량의 변화에 따라 투과도와 면저항, 굴절률 특성이 달라짐을 확인할 수 있었다. O2의 유량에 따라 면저항이 줄어들다가 어느 정도 이상이 되면 급격히 증가함을 확인할 수 있었다. Working Pressure 변화에 따른 전기적 광학적 특성 또한 확인 하였다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.29 no.4
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• pp.272-278
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• 1993

The trimethylamine-sensing characteristics of ZnO based thin film semiconductors and the sensitivity enhancement by squttering conditions have been investigated to develop a new type sensor for detecting fish freshness. The sensor fabricated with a 300nm of ZnO thin film with 4 wt% Al sub(2) O sub(3) and 1 wt% TiO sub(2) exhibited the highest sensitivity of 155 at 30$0^{\circ}C$ of working temperature and to the 240 ppm TMA gas. Deposition of ZnO thin film using a RF magnetron sputter was carried out at a pressure of 10 super(-2) Torr in pure oxygen gas with an RF power of 100W. The sensor exhibited a large response to the actual gases produced by a mackerel at an early stage of decomposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.33-36
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• 1996

AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio. The AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. The crystallinity of the films, which were grown respectively under the different conditions, were determined by the comparison of the band width of an E$_1$[TO:680$cm^{-1}$ /] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.% according to the increment of the $N_2$/Ar ratio by which the sputter yield got lower.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.449-454
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• 2006

Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.393-394
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• 2007

In this study, to minimize the above effect Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as Ar/$O_2$ gas ratios, RF power, substrate temperature, chamber prsssure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, rocking curve and Alpha-step were performed. SAW filters were fabricated to evaluate the feasibility of ZnO thin film as a piezoelectrical materials and the processes of ZnO SAW filters using etch and lift-off were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.