• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.3
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• pp.487-493
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• 2004

This study has been undertaken to increase availability of native camellia in Jeonnam as a medicinal resource and to isolate the effective components from them. Fresh leaf and flower of camellia, single camellia tea and camellia tea mixed with green tea, herbs were screened for cytotoxicity on MCF -7 (human breast adenocarcinoma pleual effusion), Calu-6 (human pulmonary carcinoma), SNU-601 (human gastric carcinoma) cells. Also their multidrug-resistance reversing activity were evaluated using drug sensitive AML-2/WT and multidrug-resistant AML-2/D100 cells. Among the camellia extracts, young leaf and camellia tea mixed with green tea had strong growth inhibitory effects in below 100 $\mu\textrm{g}$/mL against human cancer cells. In result, young leaf showed the strongest inhibitory effects on MCF -7 ($IC_{50}$/ = 100 $\mu\textrm{g}$/mL ↑), Calu-6 ($IC_{50}$/ = 79 $\mu\textrm{g}$/mL), and SNU -601 ($IC_{50}$/ = 39 $\mu\textrm{g}$/mL), and AML-2/WT ($IC_{50}$/ = 64 $\mu\textrm{g}$/mL). Chemosensitizing effect was the extracts of mature leaf ($IC_{50}$/ = 97 $\mu\textrm{g}$/mL, RF=3.0), roasted tea ($IC_{50}$/ = 76 $\mu\textrm{g}$/mL, RF = 2.6 ↑) and steam tea ($IC_{50}$/ = 70 $\mu\textrm{g}$/mL, RF=2.8 ↑) strongly potentiate vincristine cytotoxicity in AML-2/D100 cells. But their cytotoxicities to both sensitive AML-2/WT and resistant AML-2/D100 cells were in the same order of magnitude. This results indicate that crude extracts of camellia mature leaves would contain some principles which have chemosensitizing activity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.436-447
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• 2013

In this paper, Integrated circuit(IC) electromagnetic(EM) conducted immunity measurement and simulation using bulk current injection(BCI) and direct power injection(DPI) methods were conducted for 1.8 V I/O buffers. Using the equivalent circuit models developed for IC electromagnetic conducted immunity tests, we investigated the reliability of the frequency region where IC electromagnetic conducted immunity test is performed. The insertion loss for the noise injection path obtained from the simulation indicates that using only one conducted immunity test method cannot provide reliable conducted immunity test for broadband noise. Based on the forward power results, we analyzed the actual amount of EM noise injected to IC. We propose a more reliable immunity test methods for broad band noise.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1905-1913
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• 2006

The researches about the hardware and the software implementing ubiquitous sensor network have great rush in recent years. This paper deals the development of a sensor node with the dual interface which also has an RF wireless interface while has an Bluetooth interface used widely in present. This sensor node includes a Atmeg32 microcontroller, a Bluetooth module, a RF module. a temperature-humidity sensor. and I also develop the F/Ws controlling each modules with C language using GCC compiler. The sensor node developed can reaches 15m with Bluetooth interface and 60m with RF interface. It works stably with the voltage above 5V and it consumes currents 21mA average in idle mode, 63mA average in active mode.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.411-414
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• 2004

This paper introduces a modulation method for digital wireless communication based on general DS-QPSK. The design and fabrication is for home networking application to a typical RF transmitter with DS-QPSK modulator. This modulator implemented using VHDL hardware programming language, the fabrication of IC chip $5{\times}5 mm^2$ was carried by 27th IDEC MPW(Multi Project Wafer) process in 0.35${\mu}m$ rule at Samsung Inc. This paper presented the important of this technology for the future application in wireless sensor. This module can be efficient usage for home network to transmit the RF wireless sensor system.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.49-55
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• 2002

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• ETRI Journal
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• v.21 no.4
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.277-280
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• 2005

In this paper, we propose a frequency synthesizer for dualband repeater. The dual-band RF technology for applications to the wireless repeater for CDMA and WCDMA mobile communications has been developed in this paper. The dualband PLL module consisted of dual-band VCO and one PLL IC has been developed. The main technological efforts for the dual-band PLL module is to suppress the intermodulation distortion by applying the miniature ceramic filter using the slow wave characteristics. The dual-band miniature RF module including dual-band PLL module and one MCU controller is very attractive for applications to the miniature dual-band RF mobile repeaters.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.191-194
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• 2005

In this paper the platform system for IEEE 802.15.4 Low Rate WPAN is designed and fabricated. IEEE 802.15.4 Low Rate WP AN system serves the functions and realization of home-area network. According to the IEEE 802.15.4 standard, there are two modes, One is BPSK modulation in 868/915MHz frequency band. The other is O-QPSK modulation in 2.45GHz frequency band. In this paper we implemented the platform system mounted in one PCB board in 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. We measured that the platform system which consists of digital part and RF part has good performance. Also RF part is realized by design and fabrication of the RF transceiver IC. The key issue is to make the platform system which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.