• 제목/요약/키워드: RF Components

검색결과 372건 처리시간 0.034초

A Study on the Design and Characteristics of thin-film L-C Band Pass Filter

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Lee Won-Jae;Muller Alexandru
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권4호
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    • pp.176-179
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    • 2005
  • The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

SiGe 집적회로 내의 다결정 SiGe 박막 저항기의 특성 분석 (Characteristics of SiGe Thin Film Resistors in SiGe ICs)

  • 이상흥;이승윤;박찬우
    • 한국진공학회지
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    • 제16권6호
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    • pp.439-445
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    • 2007
  • RF 및 고속 아날로그 특성 및 제조 공정의 용이성에 의하여 고속 유무선통신 및 초고주파 분야에서 많이 이용되고 있는 SiGe 집적회로에서, SiGe 박막 저항기의편차를 줄여 집적회로의 신뢰성을 높이는 것이 중요하다. 본 논문에서는 실리콘계 박막 저항기 제조 후 발생하는 불균일한 저항 값 분포의 원인 규명과 그 해결 방안에 대하여 고찰한다. SiGe 박막 저항기의 실리사이드가 존재하는 컨택 영역에서 Ti-B석출물의 영향으로 인하여 저항 값의 불균일성 발생하는데, 이를 최소화하기 위하여는 가능한 최대의 boron 이온을 주입할 필요가 있다. SiGe 저항기와 금속을 배선하기 위한 컨택 홀의 크기가 작을수록 SiGe 층 내에서 돌출부가 컨택 홀의 전체면적을 차지하게 될 확률이 커지게 되어 접촉저항이 비정상적으로 커질 확률 또한 높아지게 되므로, 돌출부가 생성되는 SiGe 저항기의 경우는 컨택 홀의 면적을 크게하여 SiGe 저항기의 편차를 개선하였다.

주파수 하향변환기를 이용한 전력증폭기의 IM 성분 검출기 설계 (Design of IM components detector for the Power Amplifier by using the frequency down convertor)

  • 김병철;박원우;조경래;이재범;전남규
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2010년도 춘계학술대회
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    • pp.665-667
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    • 2010
  • 본 논문에서는 주파수 하향 변환기를 이용한 전력증폭기의 혼변조 성분 검출 방법을 제안하였다. 전력증폭기 출력 신호의 일부를 전력분배기를 통해 2개의 경로로 나누어 변환기의 RF, LO 단자에 각각 인가한 뒤 그 차 주파수를 얻고, 얻어진 차 주파수 중 필요한 성분인 3차와 5차의 차 성분만 여파기로 걸러 내어 이를 DC 전압으로 변환함으로써 전력 증폭기 출력 신호의 혼변조 성분의 크기를 알 수 있었다. 3W 전력증폭기의 Vgs를 변화시켜서 3차 혼변조 성분이 -26.4~+2.15dBm, 5차 혼변조 성분이 -34.2~-12.89dBm으로 변화하였을 때, 검출된 DC 전압 크기는 +0.72~+0.9V의 변화를 보였다.

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초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향 (Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device)

  • 류승록;구본급;강병돈;류제천;김동진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.913-917
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

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On-Chip Spiral Inductors for RF Applications: An Overview

  • Chen, Ji;Liou, Juin J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.149-167
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    • 2004
  • Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC's such as low-noise amplifiers and oscillators. This paper gives a broad overview on the on-chip spiral inductors. The design concept and modeling approach of the typical square-shaped spiral inductor are first addressed. This is followed by the discussions of advanced structures for the enhancement of inductor performance. Research works reported in the literature are summarized to aid the understanding of the recent development of such devices.

Gas tube형 Arrester의 Passive IMD 연구 (The Research for Passive IMD of Gas Tube Arrester)

  • 한진욱;김태홍;유종준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 A
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    • pp.63-66
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    • 2003
  • Resident mobile communication system technology has been developed. But, surged high voltages in antenna generally have damaged mobile communication. To solve this problem, we use arrester in Rx-Tx line system. That is, the arrester is to protect devices in system against considerable over-voltages or lighting strike. Currently, system protection using of arrester has been arrived in content level but these days, the fact of PIMD(Passive Intermodulation Distortion) which is RF passive components' nonlinear characteristic has appeared. This paper describes PIMD' causes occurred in arrester-estimated from Gas tube capsule, plating, temperature, humidity by experiment.

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Gas Tube형 Arrester의 Passive IMD 연구 (The Research for Passive IMD of Gas Tube Arrester)

  • 한진욱;고홍남;곽진교;신동주
    • 대한전기학회논문지:시스템및제어부문D
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    • 제53권11호
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    • pp.776-779
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    • 2004
  • Resident mobile communication system technology has been developed. But, surged high voltages in antenna generally have damaged mobile communication. To solve this problem, we use an arrester in Rx-Tx line system. That is, the arrester is introduced to protect devices in system against considerable over-voltages or lighting strike. Currently, system protection using an arrester has arrived in a content level but these days, the PIMD(Passive Intermodulation Distortion) with RF passive components' nonlinear characteristic has appeared. This paper describes PIMD' causes occurred in arrester-estimated from Gas tube capsule. plating, temperature, and humidity by experiment.

Microstrip Coupled-Line Lowpass Filter with Wide Stopband for RF/Wireless Systems

  • Velidi, Vamsi Krishna;Mandal, Mrinal Kanti;Sanyal, Subrata
    • ETRI Journal
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    • 제31권3호
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    • pp.324-326
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    • 2009
  • We present the design of a compact microstrip lowpass filter with a wide stopband which is up to ten times the cutoff frequency. The filter is based on a coupled-line configuration and shunt open stubs. The open stubs create additional transmission zeros, which are used to extend the stopband of the filter without any additional components or cascaded units. A prototype lowpass filter with a 3 dB cutoff frequency of 0.428 GHz and a 15 dB stopband extended up to 4.77 GHz is fabricated to validate the theoretical predictions.

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칼라 CCD 영상을 이용한 고휘도 LED 전구의 빔 열화 분석 (Analysis of High Luminance LED Beam Degradation using Color CCD Image)

  • 조재완;최영수;이재철;구인수;홍석붕
    • 제어로봇시스템학회논문지
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    • 제16권6호
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    • pp.586-591
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    • 2010
  • VLC (Visible Light Communication) is a wireless communication method using light that is visible to the human eye. It has a major advantage that it causes no interference to RF-based devices. This makes wireless communication possible in RF hazardous areas such as nuclear facilities. In order to apply VLC communication in harsh environment of nuclear power plant, the high luminance LEDs, which are key components of the VLC communication, have been gamma-ray irradiated at the dose rate of 4kGy/h during 72 hours up to a total dose of 288 kGy. The radiation induced color-center was formed in the LED housing cap made of transparent plastic or acryl material. The beam degradations of high luminance LEDs by high dose-rate gammaray irradiation are analyzed using color CCD image processing technology.

LNA를 포함하는 4채널 DBF 수신기용 Low IF Resistive FET 믹서 (Low IF Resistive FET Mixer for the 4-Ch DBF Receiver with LNA)

  • 민경식;고지원;박진생
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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    • pp.16-20
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    • 2002
  • This paper describes the resistive FET mixer with low IF for the 4-Ch DBF(Digital Beam Forming) receiver with LNA(Low Noise Amplifier). This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 2.09 ㎓, 2.08 ㎓ and 10㎒, respectively. The RF input power, LO input power and Vgs are used -10㏈m, 6㏈m and -0.4 V, respectively. In the 4-Ch resistive FET mixer with LNA, the measured IF and harmonic components of 10㎒, 20㎒, 2.09㎓ and 4.17㎓ are about -12.5 ㏈m, -57㏈m, -40㏈m and -54㏈m, respectively. The IF output power observed at each channel of 10㎒ is about -12.5㏈m and it is higher 27.5 ㏈m than the maximum harmonic component of 2.09㎓. Each IF output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

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