• Journal of information and communication convergence engineering
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• 제6권2호
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• pp.154-157
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• 2008

A class-E RF(Radio Frequency) power amplifier for wireless application is designed using standard CMOS technology. To drive the class-E power amplifier, a class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. The reliability characteristic is improved when a finite-DC feed inductor is used instead of an RF choke with the load. After one year of operating, when the load is an RF choke the output current and voltage of the power amplifier decrease about 17% compared to initial values. But when the load is a finite DC-feed inductor the output current and voltage decrease 9.7%. The S-parameter such as input reflection coefficient(S11) and the forward transmission scattering parameter(S21) is simulated with the stress time. In a finite DC-feed inductor the characteristics of S-parameter are changed slightly compared to an RF-choke inductor. From the simulation results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to power amplifier using an RF choke.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.180-182
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• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.

• 전자공학회논문지D
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• 제36D권1호
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• pp.15-21
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• 1999

저위상 변화 감쇄기를 이용한 RF 자동 이등 조정 증폭기 설계 방법을 제시하였다. RF 자동 이등 조정 증폭기를 사용함으로써, 증폭기의 출력 레벨을 일정하게 유지할 수 있으며 그 오차는 0.1dB 이하로 하였다. 이러한 장점 외에도, 임의의 RF 입력전력에 대하여 증폭기의 이득을 고정할 수도 있다. 만약 일정한 이득이 얻어진다면 원하는 혼변조 왜곡(IMD: Inter-modulation Distortion)을 얻는데 좀 더 신뢰성 있는 증폭기를 만들 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.145-148
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• 2002

This paper has been studied a predistorter which is able to linierizing of RF amplifier using schottkey. If input signal level is low, input signal is delivered directly. And if input signal level is high, input signal Is delivered with decreasing. So RF amplifier always works at saturation region .When this predistorter is used to simplified C-class RF amplifier, we have concluded that efficiency is improved about 3%.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1121-1124
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• 1998

A CMOS RF bandpass amplifier which performs both functions of low-noise amplifier and bandpass filter is designed for the application of 1.9 ㎓ RF front-end in wireless receivers. The positive-feedback Q-enhancement technique is used to overcome the low gain and low Q factor of the bandpass amplifier. The designed bandpass amplifier is simulated with HSPICE and fabricated using HYUNDAI $0.8\mu\textrm{m}$ CMOS 2-poly 2-metal full custom process. Under 3 V supply voltage, results of simulation show that the CMOS bandpass amplifier provides the power gain 23dB, noise figure 3.8 dB, and power dissipation 55mW.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.423-424
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• 2011

본 논문은 IEEE 802.15.4g SUN (Smart utility network)을 지원하는 920 MHz 대역 RF 송수신단 통합회로 구조를 제안한다. 제안하는 통합회로는 920 MHz에서 동작하고 구동증폭기, RF 스위치, 그리고 저잡음 증폭기로 구성되어 있다. 송신모드에서는 구동 증폭기가 동작하는데 싱글 구조로 설계되어 트랜스퍼머에 의한 출력 신호 손실을 제거 하였고 또한 RF 스위치의 위치를 수신단에 적용하여 출력 신호 손실을 제거 하였다. 수신모드에서는 RF 스위치와 저잡음 증폭기가 동작되는데 싱글 입력 신호에 대해 차동 출력 신호를 제공할 수 있다. 구동증폭기의 부하와 저잡음 증폭기의 입력 정합회로는 한 개의 LC 공진회로를 공유하여 칩 면적을 최소화 할 수 있다. 본 논문에서 제안하는 통합회로는 $0.18-{\mu}m$ CMOS 공정을 사용하여 설계하였고, 1.8 V 공급 전압에서 구동증폭기는 3.6 mA, 저잡음 증폭기는 3.1 mA의 전류를 소모한다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1004-1007
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• 2005

본 논문에서는 저잡음 증폭기 (Low Noise Amplifier, LNA)를 위한 프로그램 가능한 RF (고주파) BIST (Built-In Self-Test) 회로를 제안한다. 개발된 BIST 회로는 온 칩 형태로 DC 측정만을 이용하여 LNA의 RF 변수들을 측정할 수 있다. BIST 회로는 프로그램 가능한 커패시터 뱅크 (programmable capacitor banks)를 가진 test amplifier와 RF 피크 검출기로 구성되어 있다. 이러한 온 칩 회로는 각각 GSM, Bluetooth 및 IEEE802.11g의 응용을 위해 세 가지 주파수 대, 즉 1.8GHz, 2.4GHz 및 5GHz에서 사용할 수 있도록 프로그램 되어있고, LNA가 가지는 RF 사양들, 즉 입력 임피던스 및 전압이득 등을 DC 전압으로 변화시켜주는 역할을 한다.

• ETRI Journal
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• 제33권5호
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• pp.679-688
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• 2011

A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권2호
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• pp.68-71
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• 2006

A class-E power amplifier is designed using 0.25$\mu$m standard CNMOS technology at 900MHz and the reliability characteristics are studied with the load network. The reliability characteristics is improved when a finite DC-feed inductor is used instead of RF choke. At the one you halt, the PAE(Power Added Efficiency) decreases from 58.0$\%$ to 35.7$\%$ and output power decreases from 120mW to 74mW in power amplifier using RF choke. However, when a finite DC-feed inductor is used with load the PAE decreases from 58.5$\%$ to 54.8$\%$ and output power decreases from 121mW to 112mW. From the simulated results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to rower amplifier using RF choke inductor.