• 대한전자공학회논문지SD
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• 제40권4호
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• pp.42-50
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• 2003

본 논문에서는 시스템의 클럭을 안정적으로 공급하는 집적화 한 내장형 RC oscillator의 구현에 관한 논문이다. 기존의 RC oscillator는 온도에 따라 주파수변화가 약 15%정도 변화가 있는데 이는 온도에 따른 저항값의 변화와 schmit trigger의 기준전압이 온도에 따라 변화하기 때문이다. 본 연구에서는 온도에 따른 주파수 변화를 최소화하는 방법으로 CMOS bandgap과 온도에 따른 전류의 변화를 이용하였다. CMOS bandgap으로 기준 전압을 얻고 온도에 따라 증가하는 전류원과 온도에 따라 감소 하는 전류원을 서로 합하면 온도에 따라 일정한 전류를 얻어 주파수의 변화를 약 3%이내로 유지하는 회로를 제안한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1336-1339
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• 2007

Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. The oscillator frequency and its dependence on resistance and bias voltage were studied. The organic TFT is adequate for low cost and simple process integrated circuits. The frequency of oscillation was simulated and measured. It is acceptable for low-cost microelectronic device and flat panel displays.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.570-573
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• 2004

This paper present a distributed RC lines (URCs) oscillator with sinusoidal output. The frequency of oscillator can be controlled and adjustable by varying an one pole amplifier. The circuit incorporated an gain controller loop for amplitude stabilization with low distortion. The realization of simulation and experimental results are in reasonably good agreement with the theoretical , and very low harmonic distortion. In this circuit can be suitable for LSI process fabrication and the circuit application in electronic communications system.

• Nuclear Engineering and Technology
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• 제52권8호
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• pp.1764-1770
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• 2020

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

• 한국통신학회논문지
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• 제12권6호
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• pp.554-562
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• 1987

본 논문에서는 발진주파수 대역을 확장하기 위하여 3개의 연산증폭기로 구성된 RC 형 Wien-Bridge 발진기를 제시하였으며, 이 발진기를 LSI화 할 수 있도록 Forward Z변환법에 의하여 새로운 SC형 발진기로 실현하였다. 실현된 SC형 발진기는 Reddy, Budak과 Nay 가 제시한 발진기보다 주파수대역이 확장되었음을 발진주파수 함수 f의 근궤적 해석 방법을 이용하여 확인하였으며, 또한 발진조건에 충분히 만족됨을 개방 루프 측정에 의하여 확인하였다.

• 대한전자공학회논문지SD
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• 제47권12호
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• pp.68-74
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• 2010

본 논문은 Ultra-Low-Power (ULP) Radoi를 위한 Sub-${\mu}$W 급 저 전력 발진기 회로에 관한 것이다. 저 전력 발진기의 구조로서 Relaxation 구조와 Wien-Bridge 구조의 시뮬레이션 비교를 통하여, 소모 전류의 최소화 및 저 전력 동작에 최적인 Wien-Bridge 구조를 선택 하였다. Wien-Bridge 발진기 회로는 폐쇄 루프 이득이 ($1+R_2/R_1$) 인 비반전 OPAMP 증폭회로에 부귀환 경로로 RC 회로망이 접속 되어 있다. 이 회로망의 RC값과 증폭기의 폐쇄 루프 이득에 의해 발진 주파수가 정해지게 된다. 본 연구에서는 루프 이득 조정을 위해 일반적으로 사용하는 가변저항대신, MIM 커패시터와 MOS 버랙터를 조합한 가변 커패시터를 사용하여, 발진기의 폐쇄 루프 이득을 적절히 조절 하는 방식을 제안하고 이를 구현하였다. 폐쇄 루프 이득을 안정적으로 조절 할 수 있음에 따라 발진기 출력의 안정화를 얻을 수 있으며, 출력신호의 비선형성도 개선 할 수 있다. $0.18{\mu}m$ CMOS 공정을 이용해 구현된 발진기는 22 kHz 출력주파수에서 560 nA의 전류를 소모한다.

• IEIE Transactions on Smart Processing and Computing
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• 제5권2호
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• pp.71-76
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• 2016

A controller area network (CAN) receiver measures differential voltage on a bus to determine the bus level. Since 3.3V transceivers generate the same differential voltage as 5V transceivers (usually ${\geq}1.5V$), all transceivers on the bus (regardless of supply voltage) can decipher the message. In fact, the other transceivers cannot even determine or show that there is anything different about the differential voltage levels. A new CMOS RC oscillator insensitive supply voltage for clock generation in a CAN transceiver was fabricated and tested to compensate for this drawback in CAN communication. The system consists of a symmetrical circuit for voltage and current switches, two capacitors, two comparators, and an RS flip-flop. The operational principle is similar to a bistable multivibrator but the oscillation frequency can also be controlled via a bias current and reference voltage. The chip test experimental results show that oscillation frequency and power dissipation are 500 kHz and 5.48 mW, respectively at a supply voltage of 3.3 V. The chip, chip area is $0.021mm^2$, is fabricated with $0.18{\mu}m$ CMOS technology from SK hynix.

• ETRI Journal
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• 제28권1호
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• pp.45-50
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• 2006

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

• 산업기술연구
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• 제11권
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• pp.43-53
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• 1991

Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.671-677
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• 2015

A novel phase interpolator (PI) based linear model of multipath ring oscillator (MPRO) is described in this paper. By modeling each delay cell as an ideal summer followed by a single pole RC filter, the oscillation frequency is derived for a 4-stage differential MPRO. It is analytically proved that the oscillation frequency increases with the growth of the forwarding factor ${\alpha}$, which is also confirmed quantitatively through simulation. Based on the proposed model, it is shown that the power to frequency ratio keeps constant as the speed increases. Running at the same speed, a 4-stage MPRO can outperform the corresponding single-stage ring oscillator (SPRO) with 27% power saving, making MPRO with a large forwarding factor ${\alpha}$ an attractive option for lower power applications.