• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.132-138
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• 2005

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.24-27
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• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

• Journal of The Korean Astronomical Society
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• v.37 no.5
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• pp.575-578
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• 2004

High resolution observations of cluster of galaxies by Chandra have revealed the existence of an X-ray emitting comet-like galaxy C153 in the core of cluster of galaxies A2125. The galaxy C153 moving fast in the cluster core has a distinct X-ray tail on one side, obviously due to ram pressure stripping, since the galaxy C153 crossed the central region of A2125. The X-ray emitting plasma in the tail is substantially cooler than the ambient plasma. We present results of two-dimensional magnetohydrodynamic simulations of the time evolution of a sub clump like C153 moving in magnetized intergalactic matter. Anisotropic heat conduction is included. We found that the magnetic fields are essential for the existence of the cool X-ray tail, because in non-magnetized plasma the cooler sub clump tail is heated up by isotropic heat conduction from the hot ambient plasma and does not form such a comet-like tail.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.5
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• pp.499-506
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• 2013

Heat-treatment is one of the core technologies to enhance various characteristics such as strength, hardness, toughness, abrasion resistance and fatigue resistance for the mold material. This paper focuses on characteristics of the laser heat-treatment according to the cylindrical bar diameter variation in case of the SM45C. From the results of the experiments, it has been observed that the maximum hardness is 744Hv when the power is 1630W and the travel of laser is 0.5m/min. And then, the hardness width, depth and microstructure were observed for characteristics. Finally, when the cylindrical bar diameter size grow, the hardness width decrease whereas hardness depth increase.

• International Journal of Industrial Entomology and Biomaterials
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• v.17 no.2
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• pp.223-228
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• 2008

A novel beetle antimicrobial protein from stimulated Copris tripartitus and the corresponding gene were isolated in parallel through differential display-PCR and expression in Escherichia coli. To find cDNA clones responsible for bacteria resistance, the suppression subtractive hybridization and GeneFishing differentially expressed genes system were employed in the dung beetle, Copris tripartitus immunized with lipopolysaccaride. One cDNA clone from eight subtracted clones was selected through dot blot analysis and confirmed by northern blot analysis. The 516-bp, selected cDNA clone was determined by 5' and 3' rapid amplication of cDNA ends and cloned into the GST fusion expression vector pGEX-4T-1 for expression of the protein. The expressed protein was predicted 14.7 kDa and inhibited the growth of gram-negative bacteria such as Escherichia coli and Pseudomonas aeruginosa. These results implied that the expressed protein is related to immune defense mechanism against microorganism.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• Proceedings of the Acoustical Society of Korea Conference
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• autumn
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• pp.23-26
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• 2000

본 논문에서는 국제 통신 표준화기구인 ITU-T에서 인터넷폰과 화상회의를 목적으로 채택된 G.723.1 음성 부호화 시스템을 TMS320C5409를 이용하여 전 과정을 어셈블리어로 실시간 구현하였다. 구현된 G.723.1 음성 부호화기는 6.3kbps 전송률일 때 인코더 25.75MIPS이고 디코더 1.99MIPS의 최대 복잡도를 나타내고, 5.3kbps 전송률일 때 인코더 17.69MIPS이고 디코더 1.9Ml PS의 최대 복잡도를 나타낸다. 사용된 메모리는 program ROM llkwords, data ROM(table) 9.45kwords, RAM 2.8kwords 정도이며, 실시간 처리된 출력음성은 C simulation결과와 같은 음질을 보였다. 구현된 G.723.1 음성 부호화기는 ITU-T에서 제공되는17개의 테스트 벡터를 모두bit-exact하게 통과하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.352-355
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• 2003

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.236-237
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• 2012

ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.