• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.8
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• pp.438-442
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• 2013

The alternative refrigerant R436B is applied, to assess the application feasibility for a commercial cooling water system. The characteristic stability was verified by Sealed glass tube test and Autoclave test. R436B is chemically stable with the compressor material. The Oil miscibility test shows the usual compressor oil mixed well with R436B. Through the life acceleration test, the cooling performance is maintained. Though slight changes in oil and capillary tube diameter were found, they were within the permitted range. R436B should be applied to commercial cooling water systems as a simple replacement for the usual refrigerant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.432-436
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• 1999

Fiber growth of $Al_{2}O_{3}/R-Al-O$ (R = Y, Gd, Dy, Ho, Er) eutectic by the micro-pulling down method is described. The thermal stability and strength at elevated temperature of each materials is evaluated in relation to the microstructure.

• Journal of Ginseng Research
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• v.48 no.4
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• pp.435-436
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• 2024

• Communications of the Korean Mathematical Society
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• v.20 no.3
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• pp.427-436
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• 2005

Let (R, m) be a 2-dimensional regular local ring with algebraically closed residue field R/m. Let K be the quotient field of R and v be a prime divisor of R, i.e., a valuation of K which is birationally dominating R and residually transcendental over R. Zariski showed that there are finitely many simple v-ideals $m=P_0\;{\supset}\;P_1\;{\supset}\;{\cdotS}\;{\supset}\;P_t=P$ and all the other v-ideals are uniquely factored into a product of those simple ones. It then was also shown by Lipman that the predecessor of the smallest simple v-ideal P is either simple (P is free) or the product of two simple v-ideals (P is satellite), that the sequence of v-ideals between the maximal ideal and the smallest simple v-ideal P is saturated, and that the v-value of the maximal ideal is the m-adic order of P. Let m = (x, y) and denote the v-value difference |v(x) - v(y)| by $n_v$. In this paper, if the m-adic order of P is 2, we show that $O(P_i)\;=\;1\;for\;1\;{\leq}\;i\; {\leq}\;{\lceil}\;{\frac{b+1}{2}}{\rceil}\;and\;O(P_i)\;=2\;for\;{\lceil}\;\frac{b+3}{2}\rceil\;{\leq}\;i\;\leq\;t,\;where\;b=n_v$. We also show that $n_w\;=\;n_v$ when w is the prime divisor associated to a simple v-ideal $Q\;{\supset}\;P$ of order 2 and that w(R) = v(R) as well.

• Journal of the Mineralogical Society of Korea
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• v.14 no.1
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• pp.73-84
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• 2001

티타늄과 산소의 함량이 서로 다른 4가지의 합성 페롭스카이트형(perovskite-type) 광물(($K_2$$La_2$$Ti_{n}$/$O_{2n+4}$, n=3, 4, 5, 6; 14/mcm, 14/mmm, I42 m)을 대상으로 리트벨트(Rietveld)구조분석법을 실시하여 결정구조를 밝히고 티타늄함량에 따른 층상형 구조를 연구하였다. 4가지 합성시료에 대하여 구조분석을 실시한결과 대표적인 페롭스카이트형 광물인 토소나이트(taustonite, $La_{1-x}$ //$K_{x}$ /$TiO_3$, x<0.4)가 주성분으로 나타났으며 토스나이트내에 12개의 산소를 배위하는 A자리 양이온은 자리점유율에 의해 $La^{3+}$ 와 $K^{+}$ /의 치환관계를 보여준다 공간군은 14/mcm, 단위포는 a=5.505(1)~5.510(1)$\AA$, c=7.793(1)~7.796(1)$\AA$ V=236.25~236.66 $\AA^3$ 범위의 값을 갖는다. 구조의 정밀도를 나타내는 R지수를 살펴보면 $R_{B}$ 값은 5.31~9.10 S(GofF)값은 0.86~1.24로 각각 계산되었다. 12배위를 하는 A자리 양이온인 란탄과 산소의 평균거리는 2.755$\AA$이고 6배위를 하는 B자리 양이온인 티타늄과 산소의 평균거리는 1.948 $\AA$의 결과를 얻었다. 합성된페롭스카이트형 광물의 층상구조가 알려져 있지 않아 시뮬레이션을 통해 구조모델을 결정하였으며 그결과 n=3인 R-38시료에서만 두 종류의 층상 페롭스카이트($La_2$$K_2$$Ti_3$$O_{10}$ ) 구조 (A-type: 14/mmm, a=3.8178 $\AA$, c=29.9189 $\AA$, V=436.04 $\AA^3$, B-type: 142 m, a =3.8376 $\AA$, c=28.023 $\AA$, V=412.6 $\AA^3$)가 존재함을 확인하였으나 다른 시료에서는 토소나이트, 금홍석 외에 새로운 합성광물로 제파이트의 존재를 확인하였다.

• Journal of Powder Materials
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• v.26 no.5
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• pp.432-436
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• 2019

This study demonstrates the effect of addition of Fe particles of different sizes on the critical properties of the superconductor $MgB_2$. Bulk $MgB_2$ is synthesized by ball milling Mg and B powders with Fe particles at $900^{\circ}C$. When Fe particles with size less than $10{\mu}m$ are added in $MgB_2$, they easily react with B and form the FeB phase, resulting in a reduction in the amount of the $MgB_2$ phase and deterioration of the crystallinity. Accordingly, both the critical temperature and the critical current density are significantly reduced. On the other hand, when larger Fe particles are added, the $Fe_2B$ phase forms instead of FeB due to the lower reactivity of Fe toward B. Accordingly, negligible loss of B occurs, and the critical properties are found to be similar to those of the intact $MgB_2$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.3
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• pp.429-436
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• 2013

This study considers how the fatigue behavior and probabilistic properties of SAE1055 steel are related to its hardness level. SAE1055 steel was heat-treated using induction hardening. Five types of specimens were prepared (A: base material, B: through hardened material with HV390, C: through hardened material with HV510, D: through hardened material with HV700, and E: surface hardened material with HV700). Fatigue tests were performed under a stress ratio of R = -1 using a 4-point rotary bending fatigue tester. The fatigue behaviors were greatly influenced by the hardness, but the fatigue limit did not increase over a hardness of HV510. In addition, the effect of the hardness level on the failure mechanism was evaluated using a scanning electron microscope. The probabilistic properties of the fatigue life were investigated using a probabilistic S-N approach, and the effect of the hardness level on these properties was evaluated using a residue analysis.

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.436-445
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• 1993

2단계하소법에 의해 낮은 하소온도에서 미세하고도 균일한 PZT분말을 합성하였다. 우선 Zr $O_{2}$와 Ti $O_{2}$ 혼합분말을 1차하소하여 (Z $r_{0.53}$ $Ti_{0.47}$) $O_{3}$(ZTO) 분말을 합성하고 이 ZTO 고용분말에 PbO와 N $b_{2}$ $O_{5}$을 혼합한 후 650-800.deg.C에서 2시간 하소하여 PZT 분말을 합성하였는데 얻어진 분말은 고상반응법에 비해 미세할 뿐만 아니라 XRD 분석결과 710.deg.C의 낮은 하소온도에서도 PZT 단일상을 나타내었다. 2단계하소법에 의해 하소온도를 낮출 수 있는 주된 이유로는 고상반응법에서는 중간생성물인 PbTi $O_{3}$상의 생성이 수반됨으로 850.deg.C 이상 되어야만 안전한 PZT가 생성될 수 있는 점을 들 수 있다. 또 2단계하소법에 의하면 950.deg.C이하의 낮은 소결온도에서도 치밀화가 미루어지는 소결이 가능함을 알 수 있었는데 이와같이 소결온도를 낮출 수 있는 것은 고상반응법에 비해 미세한 PZT 분말을 사용하였기 때문이라 풀이된다.이된다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.436-438
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• 1987

The thermal oxidation recipe has been optimized for very thin (12 nm) capacitor oxide for Mega bit DRAM. The time dependent dielectric breakdown characteristics show that the breakdown voltage and time to breakdown are very high and uniform, indication that our oxide is defect free and suitable for DRAM capacitor dielectric. To our knowledge this is the best oxide quality obtained up tp now around 10 nm.