• 한국세라믹학회지
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• 제34권4호
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• pp.368-372
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• 1997

The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.783-786
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• 2003

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.

• 상하수도학회지
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• 제29권6호
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• pp.609-615
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• 2015

This study was carried out for characterization of MIO synthesized in our laboratory by co-precipitation method and applied isotherm and kinetic models for adsorption properties. XRD analysis were conducted to find crystal structure of synthesized MIO. Further SEM and XPS analysis was performed before and after phosphate adsorption, and BET analysis for surface characterization. Phosphate stock solution was prepared by KH2PO4 for characterization of phosphate adsorption, and batch experiment was conducted using 50 ml conical tube. Langmuir and Freundlich models were applied based on adsorption equilibrium test of MIO by initial phosphate solution. Pseudo first order and pseudo second order models were applied for interpretation of kinetic model by temperature. Surface area and pore size of MIO were found $89.6m^2/g$ and 16 nm respectively. And, the determination coefficient ($R^2$) value of Langmuir model was 0.9779, which was comparatively higher than that of Freundlich isotherm model 0.9340.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.541-545
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• 1998

(PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.202-203
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• 2007

Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

• 대한화학회지
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• 제56권4호
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• pp.484-490
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• 2012

The tin (IV) oxide nanoparticles are prepared by controlled precipitation method and calcined at temperatures of $200-600^{\circ}C$. The prepared $SnO_2$ nanoparticles characterized by XRD patterns, TEM image, IR and UV-Vis spectra. The XRD patterns and TEM image show the tetragonal structure and spherical morphology for $SnO_2$ nanoparticles, respectively. The photocatalytic activity of the prepared $SnO_2$ nanoparticles studied in degradation reaction of methylene blue (MB). The results show the size of nanoparticles, band-gap energy and photocatalytic activity of $SnO_2$ depends on the calcinations temperature. The $SnO_2$ nanoparticles calcined at $500^{\circ}C$ indicated the highest photoreactivity. Also, the zero-valent tin (ZVT) nanoparticles with tetragonal structure are prepared by a reducing agent and used as a catalyst in degradation of MB. In basic pH of 11, the degradation >95% of MB at time 150 min obtained at presence of ZVT nanoparticles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.271-272
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• 2012

Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

• 광물과산업
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• 제26권
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• pp.22-31
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• 2013

한국지질자원연구원과 몽골 광물자원청은 몽골 항가이 희유금속 광화대 내 둘란하이한 W-Mo 산출지에 대해 공동조사를 하였다. 몽골 항가이 희유금속 광화대 둘란하이한 W-Mo 산출지에 대한 지질광상 조사결과 텅스텐 함량이 높은 광화점들을 발견하였고 텅스텐 광석 광물은 철망간중석, 철중석, 망간중석으로 분석되었다. 실루리아기 호톤트 층의 규암에서 채취한 시료의 텅스텐($WO_3$) 함량이 0.11-4.43%로 분석되었고, 페름기 델거한 복합체의 페그마타이트에서 채취한 시료의 텅스텐 함량이 137-3844ppm으로 분석되었다. 조사지역에서 채취한 시료들의 전체 $R_2O_3$의 평균값은 473ppm으로 지각의 평균 함량인 200ppm에 비해 약 2.5 배 정도 되는 값을 가지며 가장 높은 시료는 1326ppm으로 약 6.5 배 정도 되는 값을 갖는 것으로 분석되었다. 요인분석 결과에 따르면 둘란하이한 지역 내 텅스텐 함량이 높은 두 지역의 광화 작용은 상관관계의 유사성을 보이며 따라서 유사한 기원을 갖는 것으로 판단된다.