• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.215-221
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• 1992

This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3$\times$10-7$\Omega$-1cm-1 and electron conductivities were 10-11$\Omega$-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.37-41
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• 2005

We investigated the electrochemical properties and microstructure on the various argon deposition pressure $(P_{Ar})$ and the low annealing temperature $(400^{\circ}C)$ of $LiCoO_2$ cathodes, which deposited by R.F. magnetron sputtering. The microsuucture and composition of Lico02 thin film was changed as a function of $P_{Ar}$. The capacity and electrochemical properties were improved with Ph of $LiCoO_2$ thin films. The cycling reversibility and stability of thin film batteries were measured by cyclic voltammetry and the constant current charge-discharge. The physical properties of cathode films were analyzed by ICP-AES, XRD, SEM and AFM for composition, crystallization and surface morphology.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.253-258
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• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.822-824
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• 2002

Transparent conducting ZnO:$Ga_2O_3$ thin films were deposited on glass substrates using rf magnetron sputtering method. The ZnO:$Ga_2O_3$ thin films were highly c-axis oriented normal to the substrates and had smooth surface features. The sheet resistance of the films was 2.8-6.4 ${\Omega}/{\square}$ at the growth temperature ranging from 25 to 30$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1764-1766
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• 1998

One of the most important problems in the development of AC PDP is to make long life and more stable panels. It is well known that the life time of a panel strongly depends on the sputtering-resistant property of the protecting layer such as MgO. However, the sputtering rate is so low that it is very difficult to measure the sputtering-resistant property of MgO. This paper describes a high speed measurement technique to test the sputtering-resistant property of MgO thin film by the R.F. magnetron sputtering. In this case the MgO sample has been used as a target of sputtering process. Moreover, the MgO surface changed by ion-bombarding sputtering are also discussed with SEM photoes.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.401-405
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• 1999

Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.51-56
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• 2001

$CeO_2$ thin films as insulator for MFISFET (Metal-ferroelectric-insulator- semiconductor-field effect transistor) were deposited by r.f. magnetron sputtering. Ar and $O_2$ gas as the deposition gas were used and the effects of oxygen partial pressure during sputtering on texture and electrical properties of $CeO_2$ thin films were evaluated. All $CeO_2$ thin films deposited on p-type Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The films deposited with only Ar gas among various condition had highest preferred orientation but show large hysteresis characteristics in capacitance-voltage measurement due to relatively many charged paricles and roughness. Films show smooth surface state and good C-V characteristics with increasing oxygen partial pressure. It was thought that this trend in C-V characteristics was due to the amount of mobile ionic charge within $CeO_2$ films. The composition of films show oxygen excess, that is, O/$Ce_2$ ratio of films was 2.22~2.42 range and leakage current of films show $10^{-7}~10^{-8}A$order at 100 kV/cm.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.195-199
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• 1998

Magnetic and Magneto-Optical properties of Co-based MnSbPt thin films prepared by R.F Sputtering were investigated. In this study, the optimum heat treatment condition was found to be $300^{\circ}C$-4hours under a $5\times10^{-6}$ Torr, but perpendicularly magnetized thin films could not be obtained. Coercive force showed maximum value of about 5000e at $250\AA$ Co thickness but the value is not enough for practical use of the thin film. Heat treated Co-based MnSbPt thin film shows 0.78 degree of Kerr rotation angle for 700nm of incident wavelength.