• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.219.1-219
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.55-55
• /
• 1996

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.63-68
• /
• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.394-400
• /
• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R. F. magnetron sputtering technique. The electrochemical results for lithium secondary battery anodes showed that addition of silicon decreases the oxidic state of tin, and, hence, reduced the irreversible capacity during the first discharge/charge cycle. The (110),(101),(211) planes were grown with increasing substrate temperatures. The reversible capacity of thin films fabricated in conditions of $300^{\circ}C$ substrate temperature and 7:3 $Ar:O_2$ ratio was 700 mAh/g.

• Journal of the Korean Ceramic Society
• /
• v.39 no.9
• /
• pp.840-845
• /
• 2002

As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,\;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{\circ}C$ and 500$^{\circ}C$, respectively and then some specimens were annealed at 500$^{\circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{\circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.42-47
• /
• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.4
• /
• pp.144-149
• /
• 2005

ZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from $\~40$ MPa to $\~-1100$MPa depending on processing variables. The specimens were thermally cycled from R.T. to $250^{\circ}C$ to investigate the stress variation as a function of temperature. SEM was employed to characterize the microstructure of te films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property o the films was studied by PL measurements. At the highest substrate temperature $800^{\circ}C$ the film exhibited sharper UV peaks unlike other conditions.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.7
• /
• pp.974-979
• /
• 2013

$TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.742-749
• /
• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Journal of the Korean Society for Heat Treatment
• /
• v.19 no.4
• /
• pp.225-229
• /
• 2006

TiAlN coatings are available in various industry fields as a wear resistant coating for high-speed machining, due to its high hardness, excellent oxidation and corrosion resistance. The corrosion resistance of TiAlN multilayer coatings is better than that of single TiN coatings. Most of TiAlN coated layers were formed by heat treatment of coating layers with a non-stoichiometric $Ti_xAl_{1-x}N$. In this study, TiAlN coated layer was prepared by R.F magnetron sputtering and investigated the thermal behavior for heat treatment at various temperature in tube furnace. The formation of large particles with porous microstructure and phase change from HCP to FCC were observed on coated layer during heat treatment over $850^{\circ}C$ and it reduced the corrosion resistance of coated TiAlN layers.