• Transactions of the Korean hydrogen and new energy society
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• v.28 no.6
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• pp.610-617
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• 2017

This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.374-378
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• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.1
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• pp.191-196
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• 2010

Aluminum doped zinc oxide (AZO) films have been prepared on Coming 7059 glass substrates by r.f. magnetron sputtering method. A powder target instead of a conventional sintered ceramic target was used in order to improve the utilization efficiency of the target and reduce the cost of the film deposition process. The influence of sputter pressure on the structural, electrical, and optical properties of AZO films were studied. The AZO films had hexagonal wurtzite structure with a preferred c-axis orientation, regardless of sputter pressure and target types. The crystallinity and degree of orientation was increased by increasing the sputter pressure. For higher sputtering pressures, a reduction of the resistivity was observed due to a increase on the mobility and the carrier concentration. The lowest resistivity of $6.5{\times}10^{-3}\;{\Omega}-cm$ and the average transmittance of 80% can be obtained for films deposited at 15 mTorr.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.139-144
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• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.54-61
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• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.233-233
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• 2010

CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.208-208
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• 2003

RF 마그네트론 스퍼터링법을 이용하여 Ar과 $O_2$의 유량을 25sccm씩 흘리면서 $SiO_2$/Si기판 위에 Sn $O_2$ 박막을 증착하였다. 증착된 박막은 columnar 구조로 성장하였으며 많은 입자들이 뭉쳐서 형성된 양배추꽃(cauliflower) 형태의 뭉친 입자(agglomerates)를 가지는 표면형상이 관찰되었다. 분위기에 따른 어닐링 효과를 확인하기 위하여 50$0^{\circ}C$에서 공기와 질소 분위기하에서 열처리하였다. 열처리한 후 표면거칠기가 개선되었으며, 표면형상의 변화가 발생하였다. 특히 50$0^{\circ}C$, 질소분위기에서 어닐링한 경우는 양배추꽃 형태의 표면형상이 소수의 작은 입자가 뭉친 형태로 분리되면서 입도분포가 개선되었다. 이러한 결과는 어닐링 과정에서 발생되는 응력을 완화시키기 위하여 표면형상의 변화가 발생하는 것으로 판단된다. XPS 측정 결과, 질소 분위기에서 어닐링한 후에 OIs와 Sn5/3d 피크가 낮은 결합에너지에 위치하고 있어 산소공공의 농도가 어닐링 전에 비하여 증가하였음을 확인할 수 있다. 어닐링 전후에 Sn $O_2$ 박막의 면저항 측정 값은 XPS 결과와는 달리 질소 분위기 어닐링한 후에 오히려 면저항값이 크게 증가하였다. 이러한 결과는 질소 분위기 어닐링한 후 표면형상의 변화에 기인하여 입자간의 연결성이 저하되어 면저항값이 증가한 것으로 추정된다. 산소분위기에서 어닐링한 후에 전체적으로 전기적 특성의 재현성이 개선되었으며 Sensitivity( $R_{air}$/ $R_{gas}$)가 향상되었음을 확인하였다.하였다.석을 통하여 La의 분포를 확인하였으며, HRTEM 분석을 통하여 미세구조분석을 실시하였다.2463eV였다. 10K에서 광발광 봉우리의 919.8nm (1.3479eV)는 free exciton(Ex), 954.5nm (1.2989eV)는 donor-bound exciton 인 I2(DO,X)와 959.5nm (1.2921eV)는 acceptor-bound exciton 인 I1(AO,X) 이고, 964.6nm(1.2853eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm (0.9239eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.가 높을수록 방출전류가 시간에 따라 급격히 감소하였다. 각 duty비에서 방출전류의 양이 1/2로 감소하는 시점을 에미터의 수명으로 볼 때 duty비 대 에미터 수명관계를 구해 높은 duty비에서 전계방출을 시킴으로써 실제의 구동조건인 낮은 duty비에서의 수명을 단시간에 예측할 수 있었다. 단속적으로 일어난 것으로 생각된다.리 폐 관류는 정맥주입 방법에 비해 고농도의 cisplatin 투여로 인한 다른 장기에서의 농도 증가 없이 폐 조직에 약 50배 정도의 고농도 cisplatin을 투여할 수 있었으며, 또한 분리 폐 관류 시 cisplatin에 의한 직접적 폐 독성은 발견되지 않았다이 낮았으나 통계학적 의의는 없었다[10.0%(4/40) : 8.2%(20/244), p>0.05]. 결론: 비디오흉강경술에서 재발을 낮추기 위해 수술시 폐야 전체를 관찰하여 존재하는 폐기포를 놓치지 않는 것이 중요하며, 폐기포를 확인하지 못한 경우와 이차성 자연기흉에 대해서는 흉막유착술에 더 세심한 주의가 필요하다는 것을 확인하였다. 비디오흉강경수술은 통증이 적고, 입원기간이 짧고,

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1756-1758
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• 1999

As new gas sensing material with high cata activity for NO decomposition and for CO oxid $LaFeO_3$ thin films with different thicknesses fabricated by the R.F. magnetron sputtering m on an $Al_2O_3$ substrates with Ag electrodes. The sensing characteristics of the $LaFeO_3$ thin films studied as a function of annealing temperature film thickness. The thin film annealed at showed the highest sensitivity of 110% for CO 60% for NO.