• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.117.2-117
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• 1998

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.429-435
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• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• 한국세라믹학회지
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• 제49권6호
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.159-162
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• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• 한국세라믹학회지
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• 제41권2호
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• 한국진공학회지
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• 제12권S1호
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• pp.1-6
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• 2003

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/$\textrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

• 한국재료학회지
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• 제10권12호
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• pp.807-811
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• 2000

MFISFET (Metal-ferroelectric-nsulator-semiconductor-field effect transistor)에의 적용을 위해 CeO$_2$와 SrBi$_2$Ta$_2$O$_{9}$ 박막을 각각 r.f. sputtering 및 pulsed laser ablation법으로 제조하였다. CeO$_2$ 박막은 증착시 스퍼터링개스비 (Ar:O$_2$)에 따른 특성을 고찰하였다. Si(100) 기판 위에 $700^{\circ}C$에서 증착된 CeO$_2$ 박막들은 (200)방향으로 우선방향성을 가지고 성장하였고 $O_2$ 개스량이 증가함에 따라 박막의 우선방향성, 결정립도 및 표면거칠기는 감소하였다. C-V특성에서는 Ar:O$_2$가 1 : 1인 조건에서 제조된 박막이 가장 양호한 특성을 보였다. 제조된 박막들의 누설전류값은 100kV/cm의 전계에서 $10^{-7}$ ~$10^{-8}$ A의 차수를 보였다. CeO$_2$/Si 기판위에 성장된 SBT는 다결정질상의 치밀한 구조를 가지고 성장을 하였다 80$0^{\circ}C$에서 열처리된 SBT박막으로 구성된 MFIS구조의 C-V 특성에서 memory window 폭은 0.9V를 보였으며 5V에서 4$\times$$10^{-7}$ A/$\textrm{cm}^2$의 누설전류밀도를 보였다.

• 한국진공학회지
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• 제5권4호
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• pp.359-364
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• 1996

Pt/Ti/$SiO_2$/Si 기판 위에 r.f. 마그네트론 스퍼터링 방법으로 $300^{\circ}C$이하의 저온에서 SrTiO3 박막을 증착하였다. XRD, RBS, TEM, EPMA로 증착된 박막의 재료적 특성을 분석하였고, Al/$SrTiO_3$/Pt의 구조로 커패시터를 제작하여 전기적 특성을 분석하였다. 기판온도가 증가함에 따라 박막의 결정성과 유전율이 향상되었으나, $200^{\circ}C$이하의 기판온도에서는 Sr이 결핍된 조성을 갖게 되어 증착된 박막이 반도성을 나타내었다. 증착중에 기판에 양의 d.c. 전압을 10~30V 인가함으로써 박막의 결정성이 크게 향상되었고, 유전특성도 개선되었다. $300^{\circ}C$의 기판온도에서 20V의 d.c. bias를 인가하여 증착한 400nm 두께의 $SrTiO_3$ 박막은 <211> 우선방향성을 갖는 주상정 구조와 화학양론적인 조성을 나타내었고, 본 연구에서 가장 우수한 전기적 특성을 보였다. 100 kHz에서 유전율이 98, 유전손실이 3.4%였으며, 3V에서 누설전류는 $10^{-5}A/\textrm{cm}^2$였다.

• 한국재료학회지
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• 제10권9호
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• pp.607-611
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• 2000

고밀도 DRAM에서 박막 커패시터로의 적용을 위해 Zr이 첨가된 (Ba(sub)1-x, Sr(sub)x)TiO$_3$<원문차조> 박막이 r.f. magnetron sputter-ing 법에 의해 제조되었다. 증착된 박막들은 다결정질 구조를 보였으며 증착압력이 감소함에따라 Zr/Ti의 비가 현저히 증가하였으며 본 연구에서는 얻어진 박막들은 100kHz에서 380∼525의 유전상수값을 나타냈다. 전압에 따른 커패시턴스와 분극량의 변화는 이력특성을 크게 보이지 않아 상유전상으로 형성되었음을 보였다. 누설전류밀도는 증착압력이 감소함에 따라 작아지는 경향을 보였고 10mTorr이상에서 증착된 박막의 경우 200kV/cm의 전계에서 10(sup)-7∼10(sup)-8A/$\textrm{cm}^2$의 차수를 갖는 누설전류밀도를 보여 본 연구에서 제조된 (Ba(sub)1-x, Sr(sub)x)(Ti(sub)1-x, Zr(sub)x)O$_3$<원문참조>박막은 고밀도 DRAm을 위한 커패시터에의 적용가능성을 보였다.