• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.191-192
• /
• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.4.2-4.2
• /
• 2008

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.247-249
• /
• 2008

Low Temperature a-Si:H TFT on stainless steel substrate has been developed for the flexible electrophoretic display. Stability of low temperature a-Si:H TFT is more important point than its initial device characteristics. Thus, we have studied device characteristics of low temperature a-Si:H TFT in terms of stability for driving electrophoretic display.

• Proceedings of the PSK Conference
• /
• 2005.04a
• /
• pp.67-68
• /
• 2005

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.961-963
• /
• 2009

a-Si process-based advanced-SPC (a-SPC) TFT has been developed and verified by manufacturing an AMOLED panel having improved cost competitiveness by using the existing a-Si infrastructure. The a-SPC TFT had superior device reliability and current drivability to a-Si TFT to meet the requirements of AMOLED backplane.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.583-586
• /
• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.42.4-42
• /
• 1998

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.113-116
• /
• 2008

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.277-280
• /
• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.781-784
• /
• 2005

We have developed technology to fabricate large-size active matrix organic light-emitting diode (AMOLED) displays with good color purity. Using these innovations, we have developed a 40inch diagonal WXGA AMOLED full color display. Because the TFT circuitry occupies a large portion of the pixel structure, an efficient white emission OLED is essential to integrate the device onto the active matrix backplane. The development of these technologies enables OLED displays to fulfill the requirements for larger size applications such as HDTVs