Development of the Printed Top Gate Organic Thin Film Transistor (OTFT)

  • Kang, H.S. (LG Display R&D Center) ;
  • Kang, H.C. (LG Display R&D Center) ;
  • Lee, M.H. (LG Display R&D Center) ;
  • Park, S.Y. (LG Display R&D Center) ;
  • Kim, M.J. (LG Display R&D Center) ;
  • Heo, J.S. (LG Display R&D Center) ;
  • Kim, D.W. (LG Display R&D Center) ;
  • Noh, Y.H. (LG Display R&D Center) ;
  • Lee, S. (LG Display R&D Center) ;
  • Kim, J.Y. (LG Display R&D Center) ;
  • Kim, C.D. (LG Display R&D Center) ;
  • Kang, I.B. (LG Display R&D Center)
  • Published : 2008.10.13

Abstract

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

Keywords