• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.209-209
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• 2000

Carbon nanotubes have been intensively investigated for its fundamental and technical importances. Structural diversities and the related diverse physical properties with large aspect ratios are fascinating, For instance carbon nanotubes are metal and semiconductors depending on its chirality and furthermore the band gap can be tailored by the diamters. Several issues on its fundamental properties have been discussed. We will review some fundamental problems for band structures, molecular quantum wires, homojunctions, single electron tunneling, and quantum conductance. Several issues related to syntheis of carbon nanotubes including arc discharge, chemical vapor deposition, laser ablation will be extentively discussed. We will further review the applicability of carbon nanotubes on resonator, nanobalance, FET-type transistor, field emission displays electrode for secondary battery and hydrogen storage.

• Journal of Magnetics
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• v.7 no.4
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• pp.156-159
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• 2002

We have investigated the escape rate of nano-magnetic particle with a magnetic field applied along the easy axis. The model studied here is described by the Hamiltonian H=$K_1\hat{S}{_z^2}$ ＋ $K_2\hat{S}{_y^2}$ ＋ $g{\mu}_bB$ $\hat{S}_x(K_1>K_2>0)$ and the escape rate was calculated with in the semiclassical approximation. We have obtained a diagram for orders of the phase transition depending on the anisotropy constant and the external field. For $K_2$/$K_1>$0.85 the present model reveals the existence of the first order transition within the quantum regime.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.66-71
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• 1998

Discretization method and numerical calculations of wigner function to introduce the influence of spatially varying effective mass as well as to reduce the error involved in the conventional discretization model are presented. Using this new discrete model, the transient responses of resonant-tunneling-diode are analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.161-161
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• 2009

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.15-27
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• 2014

양자화학 (quantum chemistry)을 처음 접했을 때, 이전까지의 고전역학 (classical mechanics)에 익숙한 대다수의 학생들은 양자화학을 받아들이는 데 어려움을 겪는다. 모형계에 양자역학 (quantum mechanics)을 직접 적용하여 봄으로써 생소한 양자 개념에 대한 이해를 도울 수 있다. 본 논문에서는 양자동역학 (quantum dynamics)을 수치적으로 구현하는 계산 프로그램을 모형계에 적용하여 양자 개념을 설명할 수 있는 몇 가지 예를 보이고자 한다. 1 차원 시간의존 슈뢰딩거 방정식 (1-D time-dependent $Schr{\ddot{o}}dinger$ equation)의 해를 얻어 양자동역학을 구현하였으며, 그에 해당하는 고전동역학은 뉴턴 방정식 (Newton's equation)의 해로 얻어졌다. 조화 진동자 퍼텐셜 (harmonic oscillator potential), 모스 진동자 퍼텐셜 (Morse oscillator potential), 이중 우물 퍼텐셜 (double-well potential), 네모 퍼텐셜 장벽 (rectangular potential barrier), 그리고 에카트 퍼텐셜 (Eckart potential)에 대한 계산을 수행하였다. 두 가지 동역학을 비교하기 위하여 계산 결과의 시각화 (visualization)를 이용하고 동역학 특성의 차이를 비교하는 차별화 (differentiation)를 강조한다. 영점에너지 (zero-point energy), 위상어긋남 (dephasing), 터널링 (tunneling), 그리고 반사 (reflection) 현상과 같은 양자동역학의 특징을 고전동역학과 비교함으로써 직관적인 이해를 도울 수 있었다. 이러한 결과는 양자화학에 입문하는 학생들을 대상으로 쓰일 수 있는 효율적인 강의 모델을 제시할 것으로 기대한다.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• The Journal of the Convergence on Culture Technology
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• v.6 no.2
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• pp.515-520
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• 2020

CMOS used in digital circuit design technology has reached the limit of integration due to quantum tunneling. Quantum-dot cellular automata (QCA), which can replace this, has many advantages such as low power consumption and fast switching speed, so many digital circuits of CMOS have been proposed based on QCA. Among them, the multiplexer is a basic circuit used in various circuits such as D-flip-flops and resistors, and has been studied a lot. However, the existing multiplexer has a disadvantage that space efficiency is not good. Therefore, in this paper, we propose a new multilayered multiplexer using cell interaction and D-latch using it. The multiplexer and D-latch proposed in this paper have improved area, cell count, and delay time, and have excellent connectivity and scalability when designing large circuits. All proposed structures are simulated using QCADesigner to verify operation.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.763-770
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• 2003

The $BH_5$ molecule, which is suggested as an intermediate of the acidolysis of $BH_4^-$, contains a weak two-electron-three-center bond and it requires extremely high-level of theories to calculate the energy and structure correctly. The structures and energies of $BH_5$ and the transition state for the hydrogen scrambling have been studied using recently developed multi-coefficient correlated quantum mechanical methods (MCCMs). The dissociation energies and the barrier heights agree very well with the previous results at the CCSD(T)/ TZ(3d1f1g, 2p1d) level. We have also calculated the potential energy curves for the dissociation of $BH_5$ to $BH_3$ and $H_2$. The lower levels of theory were unable to plot correct potential curves, whereas the MCCM methods give very good potential energy curves and requires much less computing resources than the CCSD(T)/ TZ(3d1f1g,2p1d) level. The potential energy of the $BH_5$ scrambling has been obtained by the multiconfiguration molecular mechanics algorithm (MCMM), and the rates are calculated using the variational transition state theory including multidimensional tunneling approximation. The rate constant at 300 K is 2.1 × $10^9s^{-1}$, and tunneling is very important.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.51-57
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• 1995

The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al$_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$As RTDs were numerically estimated by using a self-consistent method. Assuming a simplified RTD with single quantum well structure and spacer layers, the peak current density (J$_{P}$) and the peak-to-valley current ratio (PVCR) were analysed as the function of the thickness of the well, the barrier and the spacer layer, and temperature. As the results, the peak current density and the peak-to-valley current ratio indicated a reciprocal relation roughly in respect to the thicknesses of the well and the barrier, and it was theoretically predicted that it be not attainable to provide a high peak current desity (J$_{P}$) over 1${\times}10^{5}A/cm^{2}$ as well as the large peak-to-valley current ratio (PVCR) over 10 that were the the critical conditions for the practical use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.466-468
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• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.