• Title/Summary/Keyword: Quantum Sensors

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Mini-review on fabrication of nitrogen vacancy center in diamond and its application to NMR

  • Oh, Sangwon
    • Journal of the Korean Magnetic Resonance Society
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    • v.23 no.3
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    • pp.73-80
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    • 2019
  • Nitrogen-vacancy (NV) is one of the most popular solid-state spin systems for quantum sensing. NV has been used for vector magnetometry with nanometer spatial resolution and sensors for nuclear magnetic resonance (NMR) in samples with small volume, less than 10 pL. Various studies are in progress to make NV a complementary sensor for current NMR technique. Fabricating and improving diamond itself are one of the research topics. This mini-review contains recent develops in diamond fabrication and treatment for higher NV yield. Additionally, we briefly introduce the development status of NV in NMR.

SQUID Systems for Magnetocardiographic Applications

  • Lee, Yong-Ho;Kim, Jin-Mok;Kwon, Hyuk-Chan;Yu, Kwon-Kyu;Kim, Ki-Woong;Park, Yong-Ki
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.2
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    • pp.1-6
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    • 2007
  • As very sensitive magnetic field sensors, superconducting quantum interference devices (SQUIDs) are used to measure magnetic field signals from the human heart. By analyzing these cardiomagnetic signals, functional diagnoses of heart can be done. In order to measure weak biomagnetic signals, we need a multichannel SQUID array with sensor coverage large enough to cover the whole heart to enable the measurement in a single position setting. In this paper, we review the recent development of SQUID systems for measuring cardiomagnetic fields, with special emphasis on SQUID types.

Change of the thermoelectric voltage of type R thermocouples in the freezing points of aluminum and silver cells with the heat treatment methods (R형 열전대의 열처리 방법에 따른 알루미늄과 은 응고점에서의 기전력 변화)

  • Kim, Yong-Gyoo;Gam, Kee-Sool
    • Journal of Sensor Science and Technology
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    • v.3 no.1
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    • pp.61-67
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    • 1994
  • In order to investigate the effects of heat treatment on the thermoelectric motive force (EMF) of type R thermocouples, the changes of EMF in the freezing points of aluminum and silver cells were measured with the immersion depth of themocouples. With the variation of heat treatment methods before use, it was found that the EMF values were different from each other, maximum $17.1{\mu}V$ at $660.323^{\circ}C$ and $18.1{\mu}V$ at $961.78^{\circ}C$. Additionally a thermocouple, which was not heat-treated fully, showed an EMF difference with the immersion depth even though it was located on the region maintained at the constant temperature. The measured differences were about maximum $7.8{\mu}V$ at the Al freezing point and $18.9{\mu}V$ at the Ag freezing point. It was recongnized that a thermocouple for the precise temperature measurement should be heat-treated carefully before service. In this report, the proper heat treatment methods for the type R thermocouple were given on the basis of the obtained experimental results.

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Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation (황화 암모늄을 이용한 Al2O3/HfO2 다층 게이트 절연막 트랜지스터 전기적 및 계면적 특성 향상 연구)

  • Kim, Jun-Gyu;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.266-269
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    • 2020
  • In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment and then deposited 1/4 nm of Al2O3/HfO2 through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density Dit (2.83×1012 cm-2eV-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

Space Radiation Effect on Si Solar Cells (우주 방사능에 의한 실리콘 태양 전지의 특성 변화)

  • Lee, Jae-Jin;Kwak, Young-Sil;Hwang, Jung-A;Bong, Su-Chang;Cho, Kyung-Seok;Jeong, Seong-In;Kim, Kyung-Hee;Choi, Han-Woo;Han, Young-Hwan;Choi, Yong-Woon;Seong, Baek-Il
    • Journal of Astronomy and Space Sciences
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    • v.25 no.4
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    • pp.435-444
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    • 2008
  • High energy charged particles are trapped by geomagnetic field in the region named Van Allen Belt. These particles can move to low altitude along magnetic field and threaten even low altitude spacecraft. Space Radiation can cause equipment failures and on occasions can even destroy operations of satellites in orbit. Sun sensors aboard Science and Technology Satellite (STSAT-l) was designed to detect sun light with silicon solar cells which performance was degraded during satellite operation. In this study, we try to identify which particle contribute to the solar cell degradation with ground based radiation facilities. We measured the short circuit current after bombarding electrons and protons on the solar cells same as STSAT-1 sun sensors. Also we estimated particle flux on the STSAT-l orbit with analyzing NOAA POES particle data. Our result clearly shows STSAT-l solar cell degradation was caused by energetic protons which energy is about 700keV to 1.5MeV. Our result can be applied to estimate solar cell conditions of other satellites.

Comparison of Electrical Properties of β-Gallium Oxide (β-Ga2O3) Power SBDs with Guard Ring Structures (Guard Ring 구조에 따른 β-산화갈륨(β-Ga2O3) 전력 SBDs의 전기적 특성 비교)

  • Hoon-Ki Lee;Kyujun Cho;Woojin Chang;Jae-Kyoung Mun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.208-214
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    • 2024
  • This reports the electrical properties of single-crystal β-gallium oxide (β-Ga2O3) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al2O3 passivation layer (film guard ring: FGR) and the other is with vias formed in the Al2O3 passivation layer to allow the metal to contact the Ga2O3 surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm2 and 29 mΩ·cm2. The series resistance (Rs) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al2O3 was widely deposited on the Ga2O3 surface, which prevent leakage current on the Ga2O3 surface.

Influence of Sensor Noise on the Localization Error in Multichannel SQUID Gradiometer System (다채널 스퀴드 미분계에서 센서 잡음이 위치추정 오차에 미치는 영향)

  • 김기웅;이용호;권혁찬;김진목;정용석;강찬석;김인선;박용기;이순걸
    • Progress in Superconductivity
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    • v.5 no.2
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    • pp.98-104
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    • 2004
  • We analyzed a noise-sensitivity profile of a specific SQUID sensor system for the localization of brain activity. The location of a neuromagnetic current source is estimated from the recording of spatially distributed SQUID sensors. According to the specific arrangement of the sensors, each site in the source space has different sensitivity, that is, the difference in the lead field vectors. Conversely, channel noises on each sensor will give a different amount of the estimation error to each of the source sites. e.g., a distant source site from the sensor system has a small lead-field vector in magnitude and low sensitivity. However, when we solve the inverse problem from the recorded sensor data, we use the inverse of the lead-field vector that is rather large, which results in an overestimated noise power on the site. Especially, the spatial sensitivity profile of a gradiometer system measuring tangential fields is much more complex than a radial magnetometer system. This is one of the causes to make the solutions of inverse problems unstable on intervening of the sensor noise. In this study, in order to improve the localization accuracy, we calculated the noise-sensitivity profile of our 40-channel planar SQUID gradiometer system, and applied it as a normalization weight factor to the source localization using synthetic aperture magnetometry.

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Magnetocaloric Properties of AlFe2B2 Including Paramagnetic Impurities of Al13Fe4

  • Lee, J.W.;Song, M.S.;Cho, K.K.;Cho, B.K.;Nam, Chunghee
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1555-1560
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    • 2018
  • $AlFe_2B_2$ produced by using a conventional arc melter has a ferromagnetic material with a Curie temperature ($T_C$) of around 300 K, but the arc-melt generates paramagnetic $Al_{13}Fe_4$ impurities during the synthesis of $AlFe_2B_2$. Impurities are brought to cause a decrease in magnetocaloric effects (MCEs). To investigate the effects of $Al_{13}Fe_4$ impurities on MCEs, we prepared and compared ascast and acid-treated samples, where the acid treatment was performed to remove the $Al_{13}Fe_4$ impurities. For the structural analysis, powder X-ray diffraction was carried out, and the measured data were subjected to a Rietveld refinement. The presence of $Al_{13}Fe_4$ impurities in the as-cast sample was observed in the phase analysis measurements. Magnetic properties were investigated by using Superconducting Quantum Interference Device (SQUID) measurements for the as-cast and the acid-treated $AlFe_2B_2$ samples. From isothermal magnetization measurements, Arrott plots were obtained showing that the transition of $AlFe_2B_2$ has a second-order magnetic phase transition (SOMT). The $T_C$ and the saturation magnetization increased for the acid-treated sample due to removal of the paramagnetic impurities. As a consequence, the magnetic entropy change ($-{\Delta}S$) increased in the pure $AlFe_2B_2$ samples, but the full width at half maximum in the plot of $-{\Delta}S$ vs. T decreased due to the absence of impurities.

Shortwave Infrared Photodetector based on PbS Quantum Dots for Eye-Safety Lidar Sensors (Eye safety 라이다 센서용 황화납 양자점 기반 SWIR photodetector 개발)

  • Suji Choi;JinBeom Kwon;Yuntae Ha;Daewoong Jung
    • Journal of Sensor Science and Technology
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    • v.32 no.5
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    • pp.285-289
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    • 2023
  • Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR) photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are based on InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition, current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damage to the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more to be safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compound semiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of being simple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, and a SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HT and ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDs had excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximum current change of about 1.6 times.

An Overview of Remote Sensing of Chlorophyll Fluorescence

  • Xing, Xiao-Gang;Zhao, Dong-Zhi;Liu, Yu-Guang;Yang, Jian-Hong;Xiu, Peng;Wang, Lin
    • Ocean Science Journal
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    • v.42 no.1
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    • pp.49-59
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    • 2007
  • Besides empirical algorithms with the blue-green ratio, the algorithms based on fluorescence are also important and valid methods for retrieving chlorophyll-a concentration in the ocean waters, especially for Case II waters and the sea with algal blooming. This study reviews the history of initial cognitions, investigations and detailed approaches towards chlorophyll fluorescence, and then introduces the biological mechanism of fluorescence remote sensing and main spectral characteristics such as the positive correlation between fluorescence and chlorophyll concentration, the red shift phenomena. Meanwhile, there exist many influence factors that increase complexity of fluorescence remote sensing, such as fluorescence quantum yield, physiological status of various algae, substances with related optical property in the ocean, atmospheric absorption etc. Based on these cognitions, scientists have found two ways to calculate the amount of fluorescence detected by ocean color sensors: fluorescence line height and reflectance ratio. These two ways are currently the foundation for retrieval of chlorophyll-a concentration in the ocean. As the in-situ measurements and synchronous satellite data are continuously being accumulated, the fluorescence remote sensing of chlorophyll-a concentration in Case II waters should be recognized more thoroughly and new algorithms could be expected.