• Journal of the Korean Magnetic Resonance Society
• /
• v.25 no.4
• /
• pp.51-57
• /
• 2021

We study optical quantum transition line widths in relation to magnetic field dependence properties of the electrons confined in an infinite square well potential system between z = 0 and z = L_z in the z - direction. We consider two systems-one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. Our results indicate that the line widths of right circularly oscillating external fields is larger than the line widths of left, while the opposite result is obtained for the line widths.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.130-135
• /
• 2000

We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

• Korean Journal of Optics and Photonics
• /
• v.3 no.3
• /
• pp.183-190
• /
• 1992

Luminescence properties of asymmetric double quantum well structure composed of $Al_x/Ga_{1-x}$ /As AIAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15$\AA$ and 150$\AA$) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from $Al_x/Ga_{1-x}$As well for the 15$\AA$ barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, T-X transition between well and barrier is supposed to be a major route for the fast decay of luminescence from $Al_x/Ga_{1-x}$As well in the 150$\AA$ barrier sample. Time-resolved photduminescence from GaAs well of 15$\AA$ sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.

• Korean Journal of Materials Research
• /
• v.20 no.6
• /
• pp.289-293
• /
• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Korean Journal of Optics and Photonics
• /
• v.9 no.4
• /
• pp.221-226
• /
• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.189-189
• /
• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Journal of the Korean Chemical Society
• /
• v.36 no.1
• /
• pp.38-43
• /
• 1992

The Hammett's substituent constants were interpreted for substituted stilbenes by HMO method. The appropriate quantum chemical indices are chosen as independent contribution of the inductive and the resonance effects for substituent constants. It has been found that theoretical values, ${\sigma}_p{^{th}}$, defined as sum of the net charge, self atom polarizability and difference in HOMO energy between substituted- and unsubstituted-stilbenes, correlated with experimental Hammett's substituent constants. The dipole moments were found to be correlated with differences in ${\sigma}_p{^{th}}$ between two substituents for disubstituted stilbenes. It has been also found that transition optical spectra, ${\lambda}_{max}$ of the substituted stilbenes depend on difference between the HOMO and the LUMO energy as expected.

• Korean Journal of Optics and Photonics
• /
• v.6 no.4
• /
• pp.352-358
• /
• 1995

Measurements of the Faraday rotation and magnetization of terbium-doped Hoya FR5 glass and cerium-doped Hoya FR4 glass have been made as a function of temperature T in the range 4.2 K -10 K and of magnetic field H of up to 80 kG at the $Ar^+$ laser wavelength of 514.5nm. The saturations of magnetization and Faraday rotation above H/T> $5kG.K^{-1}$ can be analyzed by the quantum theory of paramagnetism. Calculated parameters show that the large Verdet constant of $Ce^{3+}$ glass is due to the effective $4f\rightarrow5d$ electric dipole transition effect and that of $Tb^{3+}$ glass is due to the magnetization effect.effect.

• Korean Journal of Optics and Photonics
• /
• v.9 no.6
• /
• pp.428-432
• /
• 1998

We fabricated 1$\times$8 array of GaAs/AlGaAs quantum well infrared photodetectors for the long wavelength infrared detection which is based on the bound-continuum intersubband transition, and characterized its electrical and optical properties. The device was grown on SI-GaAs(100) by the molecular beam epitaxy and consisted of 25 period of 40 ${\AA} $ GaAs well and 500 ${\AA} $ $Al_{0.28} Ga_{0.72}$ As barrier. To reduce the possibility of interface states only the center 20 ${\AA} $ of the well was doped with Si ($N_D=2{\times}10^{18} cm^{-3}$). We etched the sample to make square mesas of 200$\times$200 $\mu\textrm{m}^2$ and made an ohmic contact on each pixel with Au/Ge. Current-voltage characteristics and photoresponse spectrum of each detector reveal that the array was highly uniform and stable. The spectral responsivity and the detectivity $D^＊$ were measured to be 180,260 V/W and $4.9{\times}10^9cm\sqrt{Hz}/W$ respectively at the peak wavelength of $\lambda$ =7.8 $\mu\textrm{m}$ and at T=10 K.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.1
• /
• pp.1-5
• /
• 2009

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.